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| Silizium-PIN-Fotodiode NEU: in SMT und als Reverse Gullwing Silicon PIN Photodiode NEW: in SMT and as Reverse Gullwing 5.4 4.9 4.5 4.3 BPW 34 BPW 34 S BPW 34 S (E9087) feo06643 0.6 0.4 1.2 0.7 0.8 0.6 Cathode marking 4.0 3.7 Chip position 0.6 0.4 0.8 0.6 0.5 0.3 0.35 0.2 0.6 0.4 0 ... 5 5.08 mm spacing Photosensitive area 2.65 mm x 2.65 mm GEO06643 3.5 3.0 0.6 0.4 2.2 1.9 BPW 34 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Bereich von 400 nm bis 1100 nm q Kurze Schaltzeit (typ. 20 ns) q DIL-Plastikbauform mit hoher Packungsdichte q BPW 34 S/(E9087): geeignet fur Vapor-Phase Loten und IR-Reflow Loten (JEDEC level 4) Anwendungen q Lichtschranken fur Gleich- und Wechsellichtbetrieb q IR-Fernsteuerungen q Industrieelektronik q "Messen/Steuern/Regeln" 1.8 1.4 Approx. weight 0.1 g Features q Especially suitable for applications from 400 nm to 1100 nm q Short switching time (typ. 20 ns) q DIL plastic package with high packing density q BPW 34 S/(E9087): suitable for vapor-phase and IR-reflow soldering (JEDEC level 4) Applications q Photointerrupters q IR remote controls q Industrial electronics q For control and drive circuits Semiconductor Group 1 1998-08-27 BPW 34, BPW 34 S BPW 34 S (E9087) Chip position 0...0.1 1.2 1.1 0.3 1.1 0.9 0.2 0.1 6.7 6.2 4.5 4.3 1.8 0.2 0.9 0.7 4.0 3.7 1.7 1.5 0...5 BPW 34 S Photosensitive area 2.65 mm x 2.65 mm Cathode lead GEO06863 Chip position 0...0.1 1.2 1.1 0.3 1.1 0.9 0.2 0.1 6.7 6.2 4.5 4.3 1.8 0.2 0.9 0.7 1.7 1.5 0...5 GEO06916 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Typ Type BPW 34 BPW 34 S BPW 34 S (E9087) Bestellnummer Ordering Code Q62702-P73 Q62702-P1602 Q62702-P1790 Semiconductor Group 2 1998-08-27 BPW34S Photosensitive area 2.65 mm x 2.65 mm Cathode lead 4.0 3.7 BPW 34 S (E9087) feo06862 BPW 34, BPW 34 S BPW 34 S (E9087) Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, TA = 25 C Total power dissipation Symbol Symbol Wert Value - 40 ... + 85 32 150 Einheit Unit C V mW Top; Tstg VR Ptot Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) Bezeichnung Description Fotoempfindlichkeit, VR = 5 V Spectral sensitivity Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit Symbol Symbol Wert Value 80 ( 50) 850 400 ... 1100 Einheit Unit nA/Ix nm nm S S max S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area Halbwinkel Half angle Dunkelstrom, VR = 10 V Dark current Spektrale Fotoempfindlichkeit, = 850 nm Spectral sensitivity Quantenausbeute, = 850 nm Quantum yield Leerlaufspannung, Ev = 1000 Ix Open-circuit voltage A LxB LxW 7.00 2.65 x 2.65 mm2 mm x mm 60 2 ( 30) 0.62 0.90 365 ( 300) Grad deg. nA A/W Electrons Photon mV IR S VO Semiconductor Group 3 1998-08-27 BPW 34, BPW 34 S BPW 34 S (E9087) Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) (cont'd) Bezeichnung Description Kurzschlustrom, Ev = 1000 Ix Short-circuit current Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 ; VR = 5 V; = 850 nm; Ip = 800 A Durchlaspannung, IF = 100 mA, E = 0 Forward voltage Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 10 V, = 850 nm Nachweisgrenze, VR = 10 V, = 850 nm Detection limit Symbol Symbol Wert Value 80 20 Einheit Unit A ns ISC tr, tf VF C0 TCV TCI NEP 1.3 72 - 2.6 0.18 4.1 x 10- 14 V pF mV/K %/K W Hz cm * Hz W D* 6.6 x 1012 Semiconductor Group 4 1998-08-27 BPW 34, BPW 34 S BPW 34 S (E9087) Relative spectral sensitivity Srel = f () 100 OHF00078 Photocurrent IP = f (Ev), VR = 5 V Open-circuit voltage VO = f (Ev) 10 3 OHF01066 Total power dissipation Ptot = f (TA) 10 4 mV 160 mW Ptot 140 120 100 OHF00958 S rel % 80 P A V 10 3 10 2 VO 60 10 1 40 P 10 2 80 60 10 0 20 10 1 40 20 0 400 500 600 700 800 900 nm 1100 10 -1 10 0 10 1 10 2 10 10 3 lx 10 4 EV 0 0 0 20 40 60 80 C 100 TA Dark current IR = f (VR), E = 0 4000 OHF00080 Capacitance C = f (VR), f = 1 MHz, E = 0 100 OHF00081 Dark current IR = f (TA), VR = 10 V, E = 0 10 3 OHF00082 R pA C pF 80 R nA 10 2 3000 70 60 2000 50 40 30 10 1 1000 10 0 20 10 0 0 5 10 15 V VR 20 0 -2 10 10 -1 10 0 10 1 V 10 2 10 -1 0 20 40 60 VR 80 C 100 TA Directional characteristics Srel = f () 40 30 20 10 0 1.0 OHF01402 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Semiconductor Group 5 1998-08-27 |
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