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| DSEP 30-06CR HiPerDynFREDTM Epitaxial Diode with soft recovery (Electrically Isolated Back Surface) Preliminary Data VRSM V 600 VRRM V 600 DSEP 30-06CR Type A C IFAV = 30 A VRRM = 600 V trr = 20 ns ISOPLUS 247TM C A Isolated back surface * A = Anode, C = Cathode * Patent pending Symbol IFRMS IFAVM IFRM IFSM EAS IAR TVJ TVJM Tstg Ptot VISOL FC Weight Conditions TC = 135C; rectangular, d = 0.5 tP < 10 s; rep. rating, pulse width limited by TVJM TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = 3 A; L = 180 H VA = 1.5*VR typ.; f = 10 kHz; repetitive Maximum Ratings 70 30 tbd 300 1.2 0.3 -55...+175 175 -55...+150 A A A A mJ A C C C W V~ N g q q q q Features q TC = 25C 50/60 Hz RMS; IISOL 1 mA mounting force with clip typical 250 2500 20...120 6 q q q q q Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (<25pF) International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Isolated and UL registered E153432 Applications q Symbol IR x Conditions TVJ = 25C VR = VRRM TVJ = 150C VR = VRRM IF = 30 A; TVJ = 150C TVJ = 25C Characteristic Values typ. max. 250 1 1.79 2.46 0.6 0.25 20 4.5 7.0 A mA V V K/W K/W ns A q q q VF y RthJC RthCH trr IRM q q q q with heatsink compound IF = 1 A; -di/dt = 200 A/s; VR = 30 V; TVJ = 25C VR = 100 V; IF = 50 A; -diF/dt = 100 A/s TVJ = 100C Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages q q q Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 % y Pulse Width = 300 s, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see outlines.pdf 018 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2000 IXYS All rights reserved 1-1 |
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