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Philips Semiconductors
Product specification
Rectifier diodes ultrafast
GENERAL DESCRIPTION
Glass passivated dual epitaxial rectifier diodes in a full pack plastic envelope, featuring low forward voltage drop, ultra-fast recovery times and soft recovery characteristic. They are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and switching losses are essential.
BYQ28X series
QUICK REFERENCE DATA
SYMBOL VRRM VF IO(AV) trr PARAMETER BYQ28XRepetitive peak reverse voltage Forward voltage Output current (both diodes conducting) Reverse recovery time MAX. 100 100 0.895 10 25 MAX. 150 150 0.895 10 25 MAX. 200 200 0.895 10 25 UNIT V V A ns
PINNING - SOT186A
PIN 1 2 3 DESCRIPTION anode 1 (a) cathode (k) anode 2 (a)
PIN CONFIGURATION
case
SYMBOL
a1 1 k2
123
a2 3
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) PARAMETER Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage1 Output current (both diodes conducting)2 RMS forward current Repetitive peak forward current per diode Non-repetitive peak forward current per diode I2t for fusing Storage temperature Operating junction temperature square wave = 0.5; Ths 92 C sinusoidal a = 1.57; Ths 95 C t = 25 s; = 0.5; Ths 92 C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) t = 10 ms CONDITIONS MIN. -40 -100 100 100 100 MAX. -150 150 150 150 10 9 14 10 50 55 12.5 150 150 -200 200 200 200 UNIT V V V A A A A A A A2s C C
IO(RMS) IFRM IFSM
I2t Tstg Tj
1 Ths 148C for thermal stability. 2 Neglecting switching and reverse current losses August 1996 1 Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes ultrafast
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink CONDITIONS f = 50-60 Hz; sinusoidal waveform; R.H. 65% ; clean and dustfree MIN. -
BYQ28X series
TYP.
MAX. 2500
UNIT V
Cisol
Capacitance from T2 to external f = 1 MHz heatsink
-
10
-
pF
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound without heatsink compound in free air MIN. TYP. 55 MAX. 5.7 6.7 UNIT K/W K/W K/W
STATIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL VF IR PARAMETER Forward voltage (per diode) Reverse current (per diode) CONDITIONS IF = 5 A; Tj = 150C IF = 5 A IF = 10 A VR = VRWM; Tj = 100 C VR = VRWM MIN. TYP. 0.80 0.95 1.10 0.1 2 MAX. 0.895 1.10 1.25 0.2 10 UNIT V V V mA A
DYNAMIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL Qs trr1 trr2 Vfr PARAMETER Reverse recovery charge (per diode) Reverse recovery time (per diode) Reverse recovery time (per diode) Forward recovery voltage (per diode) CONDITIONS IF = 2 A; VR 30 V; -dIF/dt = 20 A/s IF = 1 A; VR 30 V; -dIF/dt = 100 A/s IF = 0.5 A to IR = 1 A; Irec = 0.25 A IF = 1 A; dIF/dt = 10 A/s MIN. TYP. 4 15 10 1 MAX. 9 25 20 UNIT nC ns ns V
August 1996
2
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes ultrafast
BYQ28X series
I
dI F dt
F
0.5A IF
t
rr time
0A I rec = 0.25A IR trr2
Q I R I
s
10%
100%
rrm
I = 1A R
Fig.1. Definition of trr1, Qs and Irrm
Fig.4. Definition of trr2
I
F
8 7 6 5
PF / W
Vo = 0.748 V Rs = 0.0293 Ohms
BYQ28
Ths(max) / C D = 1.0
104.4 110.1 115.8
0.5 0.2 0.1
121.5 127.2 132.9
time VF V VF time fr
4 3 2 1
I
tp
D=
tp T t
138.6 144.3 150 8
T
0
0
1
2
3
4 IF(AV) / A
5
6
7
Fig.2. Definition of Vfr
Fig.5. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x D.
PF / W
Vo = 0.748 V Rs = 0.0293 Ohms
R
6 5
BYQ28
Ths(max) / C
115.8 121.5 127.2 132.9 138.6 144.3 150 6
a = 1.57 1.9 2.2 2.8 4
D.U.T. Voltage Pulse Source
4 3 2
Current shunt
to 'scope
1 0
0
1
2
3 IF(AV) / A
4
5
Fig.3. Circuit schematic for trr2
Fig.6. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV).
August 1996
3
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes ultrafast
BYQ28X series
1000
trr / ns
100
Qs / nC
IF=5A IF=2A IF=1A
100
IF=5A
10
IF=1A 10
1.0
1
1
10 dIF/dt (A/us)
100
0.1
1.0
10 -dIF/dt (A/us)
100
Fig.7. Maximum trr at Tj = 25 C; per diode
Fig.10. Maximum Qs at Tj = 25 C; per diode
10
Irrm / A
10
Zth j-hs (K/W)
without heatsink compound
with heatsink compound
1 IF=5A
1
0.1
IF=1A
0.1
P D
tp
t
0.01 1 10 -dIF/dt (A/us) 100
0.01 10us
1ms
tp / s
0.1s
10s
Fig.8. Maximum Irrm at Tj = 25 C; per diode
Fig.11. Transient thermal impedance; per diode; Zth j-hs = f(tp).
15
IF / A Tj=150C Tj=25C
BYQ28
10
5 typ max
0 0 0.5 VF / V 1 1.5
Fig.9. Typical and maximum forward characteristic IF = f(VF); parameter Tj
August 1996
4
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes ultrafast
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
10.3 max 3.2 3.0
BYQ28X series
4.6 max 2.9 max
Recesses (2x) 2.5 0.8 max. depth
2.8 6.4 15.8 19 max. max. seating plane 15.8 max
3 max. not tinned 3 2.5 13.5 min. 1 0.4
M
2
3 1.0 (2x) 0.6 2.54 0.5 2.5 1.3 0.9 0.7
5.08
Fig.12. SOT186A; The seating plane is electrically isolated from all terminals.
Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".
August 1996
5
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes ultrafast
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values
BYQ28X series
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
August 1996
6
Rev 1.000

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