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BSH111
N-channel enhancement mode field-effect transistor
Rev. 02 -- 26 April 2002
M3D088
Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM technology. Product availability: BSH111 in SOT23.
2. Features
s s s s TrenchMOSTM technology Very fast switching Low threshold voltage Subminiature surface mount package.
3. Applications
s Battery management s High speed switch s Logic level translator.
4. Pinning information
Table 1: Pin 1 2 3 Pinning - SOT23, simplified outline and symbol Description gate (g)
3
d
Simplified outline
Symbol
source (s) drain (d)
1 Top view 2
MSB003
g s
MBB076
SOT23
Philips Semiconductors
BSH111
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions 25 C Tj 150 C Tsp = 25 C; VGS = 4.5 V Tsp = 25 C VGS = 4.5 V; ID = 500 mA VGS = 2.5 V; ID = 75 mA VGS = 1.8 V; ID = 75 mA Typ 2.3 2.4 3.1 Max 55 335 0.83 150 4.0 5.0 8.0 Unit V mA W C drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter
6. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage drain current (DC) Tsp = 25 C; VGS = 4.5 V; Figure 2 and 3 Tsp = 100 C; VGS = 4.5 V; Figure 2 IDM Ptot Tstg Tj IS ISM peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) peak source (diode forward) current Tsp = 25 C Tsp = 25 C; pulsed; tp 10 s Tsp = 25 C; pulsed; tp 10 s; Figure 3 Tsp = 25 C; Figure 1 Conditions 25 C Tj 150 C 25 C Tj 150 C; RGS = 20 k Min -65 -65 Max 55 55 10 335 212 1.3 0.83 +150 +150 335 1.3 Unit V V V mA mA A W C C mA A
Source-drain diode
9397 750 09629
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 -- 26 April 2002
2 of 13
Philips Semiconductors
BSH111
N-channel enhancement mode field-effect transistor
03aa17
120 Pder (%)
120 I der (%) 80
03aa25
80
40
40
0 0 50 100 150 Tsp (C) 200
0 0 50 100 150 200 Tsp (C)
P tot P der = ---------------------- x 100% P
tot ( 25 C )
VGS 4.5 V ID I der = ------------------ x 100% I
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of solder point temperature.
10 ID (A)
Fig 2. Normalized continuous drain current as a function of solder point temperature.
03aa71
Limit RDSon = VDS/ ID
1
tp = 10 s
100 s
10-1
1 ms DC 10 ms 100 ms
10-2
1
10
102 VDS (V)
Tsp = 25 C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 09629
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 -- 26 April 2002
3 of 13
Philips Semiconductors
BSH111
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4: Symbol Rth(j-sp) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to solder point thermal resistance from junction to ambient Conditions mounted on metal clad substrate; Figure 4 minimum footprint; mounted on printed circuit board Min Typ 350 Max 150 Unit K/W K/W
7.1 Transient thermal impedance
103 Zth(j-sp) (K/W)
03aa69
102
= 0.5
0.2 0.1 10 0.05 0.02 tp T t P = tp T
single pulse
1 10-5
10-4
10-3
10-2
10-1
1
10 tp (s)
Mounted on metal clad substrate.
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
9397 750 09629
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 -- 26 April 2002
4 of 13
Philips Semiconductors
BSH111
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics Tj = 25 C unless otherwise specified Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions ID = 10 A; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 C Tj = 150 C Tj = -55 C IDSS drain-source leakage current VDS = 44 V; VGS = 0 V Tj = 25 C Tj = 150 C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = 8 V; VDS = 0 V VGS = 2.5 V; ID = 75 mA; Figure 7 and 8 Tj = 25 C Tj = 150 C VGS = 4.5 V; ID = 500 mA; Figure 7 and 8 Tj = 25 C VGS = 1.8 V; ID = 75 mA; Figure 7 and 8 Tj = 25 C Dynamic characteristics gfs Qg(tot) Qgs Qgd Ciss Coss Crss ton toff forward transconductance total gate charge gate-source charge gate-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on time turn-off time VDD = 50 V; RD = 250 ; VGS = 10 V; RG = 50 ; RGS = 50 VGS = 0 V; VDS = 10 V; f = 1 MHz; Figure 12 VDS = 10 V; ID = 200 mA; Figure 11 ID = 0.5 A; VDS = 44 V; VGS = 8 V; Figure 14 100 380 1.0 0.05 0.5 17 7 4 4 11 40 30 10 10 15 mS nC nC nC pF pF pF ns ns 3.1 8 2.3 4 2.4 5 7.4 0.01 10 1.0 10 100 A A nA 0.4 0.3 1.0 1.3 2.5 V V V 55 50 75 V V Min Typ Max Unit Static characteristics
9397 750 09629
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 -- 26 April 2002
5 of 13
Philips Semiconductors
BSH111
N-channel enhancement mode field-effect transistor
Table 5: Characteristics...continued Tj = 25 C unless otherwise specified Symbol VSD trr Qr Parameter source-drain (diode forward) voltage reverse recovery time recovered charge Conditions IS = 300 mA; VGS = 0 V; Figure 13 IS = 300 mA; dIS/dt = -100 A/s; VGS = 0 V; VDS = 25 V Min Typ 0.95 30 30 Max 1.5 Unit V ns nC Source-drain diode
9397 750 09629
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 -- 26 April 2002
6 of 13
Philips Semiconductors
BSH111
N-channel enhancement mode field-effect transistor
0.8 I D (A) 0.6
03aa73
0.8 ID (A) 0.6
03aa75
VGS = 4.5 V
Tj = 25 C
150 C 0.4 3V
0.4
0.2
2V 1.8 V 1.6 V 1.4 V 0 0.4 0.8 1.2 1.6 2 VDS (V)
0.2
0
0 0 1 2 3 4 5 VGS (V)
Tj = 25 C
Tj = 25 C and 150 C; VDS > ID x RDSon
Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values.
Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values.
20 RDSon () 16 1.4 V
03aa74
2.4 a
!== &
1.6 V
1.8
12 1.8 V 2V 8 3V 4 VGS = 4.5 V
1.2
0.6
0 0 0.2 0.4 0.6 ID (A)
0.8
0 -60 0 60 120
Tj (C)
180
Tj = 25 C
R DSon a = --------------------------R DSon ( 25 C )
Fig 7. Drain-source on-state resistance as a function of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature.
9397 750 09629
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 -- 26 April 2002
7 of 13
Philips Semiconductors
BSH111
N-channel enhancement mode field-effect transistor
2 VGS(th) (V) 1.6
03aa38
10-1
03aa89
ID (A)
10-2
1.2 typ 0.8
10-3
min
10-4
typ
0.4
min
10-5
0 -60
10-6 0 60 120 180
0
0.4
0.8
1.2
1.6 VGS (V)
2
Tj (C)
ID = 1 mA; VDS = VGS
Tj = 25 C; VDS = 5 V
Fig 9. Gate-source threshold voltage as a function of junction temperature.
Fig 10. Sub-threshold drain current as a function of gate-source voltage.
0.5 gfs (S) 0.4
Tj = 25 C
03aa76
102 C (pF)
03aa78
0.3 150 C 0.2 10
Ciss
Coss Crss
0.1
0 0 0.2 0.4 ID (A) 0.6
1 10-1
1
10 VDS (V)
102
Tj = 25 C and 150 C; VDS > ID x RDSon
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 09629
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 -- 26 April 2002
8 of 13
Philips Semiconductors
BSH111
N-channel enhancement mode field-effect transistor
1 IS (A) 0.8
03aa77
8 VGS (V) 6
03ab08
0.6
150 C
4 0.4
Tj = 25 C
2 0.2
0 0 0.4 0.8 1.2 1.6 VSD (V)
0 0 0.2 0.4 0.6 0.8 QG (nC) 1
Tj = 25 C and 150 C; VGS = 0 V
ID = 0.5 A; VDS = 44 V
Fig 13. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
Fig 14. Gate-source voltage as a function of gate charge; typical values.
9397 750 09629
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 -- 26 April 2002
9 of 13
Philips Semiconductors
BSH111
N-channel enhancement mode field-effect transistor
9. Package outline
Plastic surface mounted package; 3 leads SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC TO-236AB EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 99-09-13
Fig 15. SOT23.
9397 750 09629 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 -- 26 April 2002
10 of 13
Philips Semiconductors
BSH111
N-channel enhancement mode field-effect transistor
10. Revision history
Table 6: 02 Revision history CPCN Description Product data (9397 750 09629) Modifications
Rev Date 20020426
*
01 20000807 -
VGS data updated.
Product specification; initial version.
9397 750 09629
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 -- 26 April 2002
11 of 13
Philips Semiconductors
BSH111
N-channel enhancement mode field-effect transistor
11. Data sheet status
Data sheet status[1] Objective data Preliminary data Product status[2] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Product data
Production
[1] [2]
Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
12. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
13. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
14. Trademarks
TrenchMOS -- is a trademark of Koninklijke Philips Electronics N.V.
Contact information
For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.
9397 750 09629
Fax: +31 40 27 24825
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 -- 26 April 2002
12 of 13
Philips Semiconductors
BSH111
N-channel enhancement mode field-effect transistor
Contents
1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 14 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
(c) Koninklijke Philips Electronics N.V. 2002. Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 26 April 2002 Document order number: 9397 750 09629

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