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 ANSALDO
Ansaldo Trasporti s.p.a. Unita' Semiconduttori
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int. +39/(0)10 6442510 Tx 270318 ANSUSE I -
PHASE CONTROL THYRISTOR
AT708
Repetitive voltage up to Mean on-state current Surge current 800 V 4925 A 70 kA
FINAL SPECIFICATION
feb 97 - ISSUE : 02
Symbol
Characteristic
Conditions
Tj [C]
140 140 140
Value
Unit
BLOCKING
V V V I I
RRM RSM DRM RRM DRM
Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak off-state voltage Repetitive peak reverse current Repetitive peak off-state current V=VRRM V=VDRM
800 900 800 200 200
V V V mA mA
140 140
CONDUCTING
I I I V V r
T (AV) T (AV) TSM
Mean on-state current Mean on-state current Surge on-state current I t On-state voltage Threshold voltage On-state slope resistance
180 sin, 50 Hz, Th=55C, double side cooled 180 sin, 50 Hz, Tc=85C, double side cooled sine wave, 10 ms without reverse voltage On-state current =
10000 A
4925 4185 140 25 140 140 70
24500 x1E3
A A kA As V V mohm
I t
T T(TO) T
1.5 0.84 0.060
SWITCHING
di/dt dv/dt td tq Q rr I rr I I
H L
Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. Gate controlled delay time, typical Circuit commutated turn-off time, typical Reverse recovery charge Peak reverse recovery current Holding current, typical Latching current, typical
From 75% VDRM up to 3900 A, gate 10V 5ohm Linear ramp up to 70% of VDRM VD=100V, gate source 10V, 10 ohm , tr=.5 s dV/dt = 20 V/s linear up to 75% VDRM di/dt=-20 A/s, I= 2600 A VR= 50 V VD=5V, gate open circuit VD=5V, tp=30s
140 140 25 140 25 25
320 500 3 160
A/s V/s s s C A
300 1000
mA mA
GATE
V I V V I V P P
GT GT GD FGM FGM RGM GM G
Gate trigger voltage Gate trigger current Non-trigger gate voltage, min. Peak gate voltage (forward) Peak gate current Peak gate voltage (reverse) Peak gate power dissipation Average gate power dissipation
VD=5V VD=5V VD=VDRM
25 25 140
3.5 250 0.25 30 10 5
V mA V V A V W W
Pulse width 100 s
150 2
MOUNTING
R R T F
th(j-h) th(c-h) j
Thermal impedance, DC Thermal impedance Operating junction temperature Mounting force Mass ORDERING INFORMATION : AT708 S 08 standard specification
Junction to heatsink, double side cooled Case to heatsink, double side cooled
11 2 -30 / 140 40.0 / 50.0 1700
C/kW C/kW C kN g
VDRM&VRRM/100
AT708 PHASE CONTROL THYRISTOR
FINAL SPECIFICATION feb 97 - ISSUE : 02
ANSALDO
DISSIPATION CHARACTERISTICS SQUARE WAVE
Th [C] 140 130 120 110 100 90 80 70
180 30 60 90 120
60 50 0 1000 2000 3000 4000 5000
DC
6000
7000
IF(AV) [A]
PF(AV) [W] 8000 7000 6000
60 90 120 180 DC
5000
30
4000 3000 2000 1000 0 0 1000 2000 3000 4000 5000 6000 7000 IF(AV) [A]
AT708 PHASE CONTROL THYRISTOR
FINAL SPECIFICATION feb 97 - ISSUE : 02
ANSALDO
DISSIPATION CHARACTERISTICS SINE WAVE
Th [C] 140 130 120 110 100 90 80 70 60 50 0 1000 2000 3000 4000 5000 6000 7000 IF(AV) [A]
30 60 90 120 180
PF(AV) [W] 8000 7000
120 180
6000 5000 4000 3000 2000 1000 0 0 1000 2000 3000 4000 5000 6000 7000 IF(AV) [A]
30 60 90
AT708 PHASE CONTROL THYRISTOR
FINAL SPECIFICATION feb 97 - ISSUE : 02
ANSALDO
ON-STATE CHARACTERISTIC Tj = 140 C
SURGE CHARACTERISTIC Tj = 140 C
16000 14000 12000 On-state Current [A]
70 60 50
10000 ITSM [kA] 0.6 1.1 1.6 40 30 20 10 0 1 10 n cycles 100 On-state Voltage [V] 8000 6000 4000 2000 0
TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED
12.0
10.0
Zth j-h [C/kW]
8.0
6.0
4.0
2.0
0.0 0.001 0.01 0.1 t[s] 1 10 100 Cathode terminal type DIN 46244 - A 4.8 - 0.8 Gate terminal type AMP 60598 - 1 Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 m. In the interest of product improvement ANSALDO reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported.


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