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 Transistor
2SC2647
Silicon NPN epitaxial planer type
For high-frequency amplification
Unit: mm
6.90.1 1.5 2.50.1 1.0
1.0 2.40.2 2.00.2 3.50.1
s Features
q q
1.5 R0.9 R0.9
0.85
0.550.1
0.450.05
1.250.05
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg
(Ta=25C)
Ratings 30 20 5 30 400 150 -55 ~ +150 Unit V V V mA mW C C
1:Base 2:Collector 3:Emitter
2.5 2.5 3 2 1
EIAJ:SC-71 M Type Mold Package
s Electrical Characteristics
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Transition frequency Common emitter reverse transfer capacitance Reverse transfer impedance
(Ta=25C)
Symbol VCBO VCEO VEBO hFE fT Cre Zrb
*
Conditions IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCB = 10V, IE = -1mA VCB = 10V, IE = -1mA, f = 200MHz VCE = 10V, IC = 1mA, f = 10.7MHz VCB = 10V, IE = -1mA
min 30 20 5 70 150
typ
max
4.10.2
Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
0.4
1.00.1
R
0.
4.50.1
7
Unit V V V
250 230 1.3 1.6 60 MHz pF
*h
FE
Rank classification
B 70 ~ 160 C 110 ~ 250 hFE
Rank
1
Transistor
PC -- Ta
500 12 Ta=25C 10 IB=100A 100
2SC2647
IC -- VCE
120 VCE=10V Ta=25C
IB -- VBE
Collector power dissipation PC (mW)
Collector current IC (mA)
400
8 60A 6 40A
Base current IB (A)
18
80A
80
300
60
200
4
40
100
2
20A
20
0 0 20 40 60 80 100 120 140 160
0 0 6 12
0 0 0.6 1.2 1.8
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
IC -- VBE
Collector to emitter saturation voltage VCE(sat) (V)
60 VCE=10V 50 100 30 10 3 1 0.3
VCE(sat) -- IC
IC/IB=10 600
hFE -- IC
VCE=10V
Forward current transfer ratio hFE
500 Ta=75C 400 25C 300 -25C 200
Collector current IC (mA)
40 25C 30 Ta=75C 20 -25C
Ta=75C 25C
0.1 0.03 0.01 0.1
-25C
10
100
0 0 0.4 0.8 1.2 1.6 2.0
0.3
1
3
10
30
100
0 0.1
0.3
1
3
10
30
100
Base to emitter voltage VBE (V)
Collector current IC (mA)
Collector current IC (mA)
fT -- IE
600 Ta=25C 80
Zrb -- IE
Common emitter reverse transfer capacitance Cre (pF)
2.4
Cre -- VCE
f=2MHz Ta=25C IC=1mA f=10.7MHz Ta=25C
Reverse transfer impedance Zrb ()
Transition frequency fT (MHz)
70 60 50 40 30 20 10 0 - 0.1 VCB=6V 10V
500
2.0
400 VCB=10V 6V 200
1.6
300
1.2
0.8
100
0.4
0 - 0.1 - 0.3
-1
-3
-10
-30
-100
- 0.3
-1
-3
-10
0 0.1
0.3
1
3
10
30
100
Emitter current IE (mA)
Emitter current IE (mA)
Collector to emitter voltage VCE (V)
2
Transistor
Cob -- VCB
1.6 12 yie=gie+jbie VCE=10V
2SC2647
bie -- gie
0
bre -- gre
Reverse transfer susceptance bre (mS)
yre=gre+jbre VCE=10V f=0.45MHz 10.7 25
Collector output capacitance Cob (pF)
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1 3 10
IE=0 f=1MHz Ta=25C
Input susceptance bie (mS)
10
100
- 0.5
8
58
-1.0 - 0.4mA -1mA -1.5 -2mA -4mA
58
6
25 10.7 IE=- 0.4mA -1mA -2mA -4mA -7mA f=0.45MHz
4
-2.0
2
-2.5
100 IE=-7mA
0 30 100 0 4 8 12 16 20
-3.0 - 0.5
-0.4
- 0.3
- 0.2
- 0.1
0
Collector to base voltage VCB (V)
Input conductance gie (mS)
Reverse transfer conductance gre (mS)
bfe -- gfe
0
boe -- goe
0.45
Forward transfer susceptance bfe (mS)
- 0.1mA
- 0.4mA 25 100 100 58
0.45 10.7 -1mA
1.2 100
10.7
-20
Output susceptance boe (mS)
-2mA 25 58
1.0
-4mA
100
-40
100 58 25 f=10.7MHz
0.8 58 0.6 25 0.4 10.7 0.2 f=0.45MHz 0 0.2 0.4
-7mA -4mA -2mA -1mA - 0.4mA IE=- 0.1mA
-60
58 IE=-7mA
-80
-100 yfe=gfe+jbfe VCE=10V
yoe=goe+jboe VCE=10V 0.6 0.8 1.0
-120 0 20 40 60 80 100
0
Forward transfer conductance
gfe (mS)
Output conductance goe (mS)
3


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