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 Power Transistors
2SC2258
Silicon NPN triple diffusion planar type
For high breakdown voltage general amplification Features
* High collector-emitter voltage (Base open) VCEO * High transition frequency fT * TO-126B package which requires no insulation plate for installation to the heat sink
3.160.1 8.0+0.5 -0.1
Unit: mm
3.20.2
3.80.3
11.00.5
1.90.1
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 250 250 7 100 150 1.2 *1 4 Junction temperature Storage temperature
*2
Unit V V V mA mA W C C
1 2 0.750.1 4.60.2 0.50.1 0.50.1 2.30.2 3 1.760.1
150 -55 to +150
Note) *1: Without heat sink *2 :With a 100 x 100 x 2 mm Al heat sink
Electrical Characteristics Ta = 25C 3C
Parameter Emitter-base voltage (Collector open) Base-emitter voltage Collector-emitter cutoff current (Resistor between B and E) Forward current transfer ratio Symbol VEBO VBE ICER hFE1 hFE2 Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) fT Cob Conditions IE = 0.1 mA, IC = 0 VCE = 20 V, IC = 40 mA VCE = 250 V, RBE = 100 k VCE = 20 V, IC = 40 mA VCE = 50 V, IC = 5 mA IC = 50 mA, IB = 5 mA VCB = 10 V, IE = -10 mA, f = 200 MHz VCB = 50 V, IE = 0, f = 1 MHz 100 3.0 4.5 40 30 1.2 V MHz pF Min 7 1.2 100 Typ Max Unit V V A
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
16.01.0
1: Emitter 2: Collector 3: Base TO-126B-A1 Package
3.050.1
Publication date: January 2003
SJD00098BED
1
2SC2258
PC Ta
5
IC VCE
120
120
TC=25C 1.8mA IB=2.0mA
IC VBE
VCE=10V
Collector power dissipation PC (W)
4
(1)
(1)With a 100x100x2mm Al heat sink (2)Without heat sink
100
1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA
100
25C -25C TC=100C
Collector current IC (mA)
80
Collector current IC (mA)
80
3
60
60
2
(2)
40
0.2mA
40
1
20
20
0
0
0 40 80 120 160
0
2
4
6
8
10
0
0
0.4
0.8
1.2
1.6
2.0
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
IC I B
Collector-emitter saturation voltage VCE(sat) (V)
120
VCE=10V TC=25C
VCE(sat) IC
100
IC/IB=10
IB VBE
3.0
VCE=10V TC=25C
100
2.5
10
Collector current IC (mA)
80
Base current IB (mA)
100
2.0
60
1
TC=100C 25C
1.5
40
1.0
0.1
-25C
20
0.5
0
0
0.4
0.8
1.2
1.6
2.0
0.01 0.1
1
10
0
0
0.2
0.4
0.6
0.8
1.0
Base current IB (mA)
Collector current IC (A)
Base-emitter voltage VBE (V)
hFE IC
240
VCE=10V
fT I E
Collector output capacitance C (pF) (Common base, input open circuited) ob
160
VCB=10V f=200MHz TC=25C
Cob VCB
10
IE=0 f=1MHz TC=25C
Forward current transfer ratio hFE
Transition frequency fT (MHz)
200
TC=100C
8
120
160
6
120
25C
80
4
80
-25C
40
40
2
0 0.01
0.1
1
10
0 -1
-10
-100
0
1
10
100
Collector current IC (mA)
Emitter current IE (mA)
Collector-base voltage VCB (V)
2
SJD00098BED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL


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