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| 2N2102 GENERAL PURPOSE AMPLIFIER AND SWITCH DESCRIPTION The 2N2102 is a silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. It is intended for a wide variety of small-signal and medium power applications in military and industrial equipments. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V CER V EBO IC Pt o t T s t g, T j January 1989 Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (I B = 0) Collector-emitter Voltage (R BE 10 ) Emitter-base Voltage (I C = 0) Collector Current Total Power Dissipation at T amb 25 C at T c as e 25 C Storage and Junction Temperature Value 120 65 80 7 1 1 5 - 65 to 200 Unit V V V V A W W C 1/4 2N2102 THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 35 175 C/W C/W ELECTRICAL CHARACTERISTICS (T amb = 25 C unless otherwise specified) Symbol I CBO I E BO V ( BR) V CEO V CE VB E CBO Parameter Collector Cutoff Current (I E = 0) Emitter Cutoff Current (I C = 0) Collector-base Breakdown Voltage (I E = 0) Collector-emitter Sustaining Voltage (I B = 0) Collector-emitter Saturation Voltage Base-emitter Saturation Voltage DC Current Gain Test Conditions V CB = 60 V V CB = 60 V VE B = 5 V I C = 100 A I C = 30 mA I C = 150 mA I C = 150 mA IC IC IC IC IC IC = 10 A = 100 A = 10 mA = 150 mA = 500 mA =1A I B = 15 mA I B = 15 mA V CE V CE V CE V CE V CE V CE = = = = = = 10 10 10 10 10 10 V V V V V V T am b = 150 C Min. Typ. Max. 2 2 5 Unit nA A nA V V 120 65 0.5 1.1 10 20 35 40 25 10 6 ( su s)* (s at )* V V (s at )* h F E* 120 hfe NF High Frequency Current Gain Noise Figure I C = 50 mA f = 20 MHz I C = 300 A BW = 1 Hz IE = 0 f = 1 MHz IC = 0 f = 1 MHz V CE = 10 V V CE = 10 V f = 1 KHz R G = 510 V CB = 10 V V EB = 0.5 V 8 dB C CBO C EBO Collector-base Capacitance Emitter-base Capacitance 15 80 pF pF * Pulsed : pulse duration = 300 s, duty cycle = 1 %. 2/4 2N2102 TO39 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 5.08 1.2 0.9 45o (typ.) 12.7 0.49 6.6 8.5 9.4 0.200 0.047 0.035 TYP. MAX. MIN. 0.500 0.019 0.260 0.334 0.370 TYP. MAX. inch D G I H E F A L B P008B 3/4 2N2102 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4 |
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