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| (R) STU7NA80 N - CHANNEL 800V - 1.3 - 6.5A - Max220 FAST POWER MOSFET PRELIMINARY DATA TYPE STU7NA80 V DSS 800 V R DS(on) < 1.5 ID 6.5 A s s s s s s s TYPICAL RDS(on) = 1.3 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED DATA AT 100 oC LOW INTRINSIC CAPACITANCE 100% AVALANCHE TESTED GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD 1 2 3 Max220TM DESCRIPTION The Max220 TM package is a new high volume power package exibiting the same footprint as the industry standard TO-220, but designed to accomodate much larger silicon chips, normally supplied in bigger packages. The increased die capacity makes the device ideal to reduce component count in multiple paralleled TO-220 designs and save board space with respect to larger packages. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s CONSUMER AND INDUSTRIAL LIGHTING s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES (UPS) ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM (*) P tot T stg Tj June 1998 Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o Value 800 800 30 6.5 4.3 26 145 1.16 -65 to 150 150 Unit V V V A A A W W/ o C o o C C 1/5 (*) Pulse width limited by safe operating area STU7NA80 THERMAL DATA R thj-case Rthj-amb R thc-sink TI Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 0.86 30 0.1 300 o o C/W C/W o C/W o C AVALANCHE CHARACTERISTICS Symbol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , VDD = 50 V) Max Value 6.5 220 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A VGS = 0 Min. 800 250 1000 100 Typ. Max. Unit V A A nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V DS = 0) V GS = 30 V T c = 100 C o ON () Symbol V GS(th) R DS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance V DS = VGS V GS = 10 V Test Conditions ID = 250 A I D = 3.5 A 6.5 Min. 2.25 Typ. 3 1.3 Max. 3.75 1.5 Unit V A On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V DYNAMIC Symbol g fs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 25 V f = 1 MHz I D = 3.5 A V GS = 0 Min. 4.5 Typ. 7.2 1770 190 50 2300 250 70 Max. Unit S pF pF pF 2/5 STU7NA80 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions V DD = 400 V 3.5 A R G = 4.7 V DD = 480 V ID = 8 A ID = V GS = 10 V V GS = 10 V 75 10 34 110 nC nC nC Min. Typ. 20 30 Max. 30 45 Unit ns ns SWITCHING OFF Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 640 V R G = 4.7 ID = 7 A V GS = 10 V Min. Typ. 18 20 25 Max. 27 30 40 Unit ns ns ns SOURCE DRAIN DIODE Symbol I SD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 7 A I SD = 7 A V DD = 100 V V GS = 0 di/dt = 100 A/s o T j = 150 C 850 17 40 Test Conditions Min. Typ. Max. 6.5 26 1.6 Unit A A V ns C A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area 3/5 STU7NA80 Max220 MECHANICAL DATA DIM. MIN. A A1 A2 b b1 b2 c D D1 D2 D3 e E L L1 4.3 2.2 2.9 0.7 1.25 1.2 0.45 15.9 9 0.8 2.8 2.44 10.05 13.2 3 mm TYP. MAX. 4.6 2.4 3.1 0.93 1.4 1.38 0.6 16.3 9.35 1.2 3.2 2.64 10.35 13.6 3.4 0.354 0.031 0.110 0.096 0.396 0.520 0.118 MIN. 0.169 0.087 0.114 0.027 0.049 0.047 0.18 0.626 inch TYP. MAX. 0.181 0.094 0.122 0.036 0.055 0.054 0.023 0.641 0.368 0.047 0.126 0.104 0.407 0.535 0.133 D3 D2 D1 C A A2 D b1 b2 b e E L1 L A1 P011R 4/5 STU7NA80 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . 5/5 |
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