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MITSUBISHI TRANSISTOR MODULES
QM30DY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM30DY-H
* * * * *
IC Collector current .......................... 30A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
94 (7) 20 10.5 13 10.5 80 20 27 6.5
B2 E2
(7)
B2 E2 C1
C2E1
E2
34
C2E1
E2
C1 12
E1 B1
E1 B1
M5
Tab#110, t=0.5 6.5
31
LABEL (8)
22.5
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30DY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage
(Tj=25C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 30 30 250 1.8 300 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M5 2500 1.47~1.96 15~20 1.96~2.94 20~30 210 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm g
--
Mounting torque Mounting screw M6
--
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Tj=25C, unless otherwise noted)
Limits Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=30A, IB=0.4A -IC=30A (diode forward voltage) IC=30A, VCE=2V/5V Min. -- -- -- -- -- -- 75/100 -- VCC=600V, IC=30A, IB1=-IB2=0.6A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 200 2.0 2.5 1.85 -- 1.5 12 3.0 0.5 2.0 0.15 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30DY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL)
100 Tj=25C 10 3 7 5 4 3 2 10 2 7 5 4 3 2 10 1 10 0
DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT IC (A)
VCE=5.0V
80 IB=2.0A 60 IB=1.0A IB=0.5A 40 IB=0.3A 20 IB=0.1A
DC CURRENT GAIN hFE
VCE=2.0V
Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
VCE (V)
COLLECTOR CURRENT IC (A)
VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL)
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 1.0 1.4 1.8 2.2 2.6 3.0
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
101 7 5 4 3 2
BASE CURRENT IB (A)
Tj=25C VCE=2.0V
VBE(sat)
SATURATION VOLTAGE
10 0 7 VCE(sat) 5 4 3 IB=0.4A 2 Tj=25C Tj=125C 10-1 10 0 2 3 4 5 7 10 1
2 3 4 5 7 10 2
BASE-EMITTER VOLTAGE
VBE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
5
Tj=25C Tj=125C
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
10 1 7 5 4 3 2 10 0 7 5 4 3 2
4
ton, ts, tf (s)
ts VCC=300V IB1=-IB2=0.6A tf ton
3
2
IC=30A
1
IC=10A IC=20A
SWITCHING TIME
0 10 -2
2 3 4 5 7 10 -1
2 3 4 5 7 10 0
10 -1 10 0
Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2
BASE CURRENT IB (A)
COLLECTOR CURRENT
IC (A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30DY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE CURRENT (TYPICAL)
3 2 VCC=300V IB1=0.6A IC=30A Tj=25C Tj=125C
REVERSE BIAS SAFE OPERATING AREA
70
COLLECTOR CURRENT IC (A)
ts, tf (s)
60 50 40 30 20 10
Tj=125C
10 1 7 5 4 3 2 10 0 7 5 4 3 10 -1 ts
SWITCHING TIME
IB2= -1A -3A -5A
tf
2 3 4 5 7 10 0
2 3 4 5 7 10 1
0
0
100 200 300 400 500 600 700
BASE REVERSE CURRENT -IB2 (A)
COLLECTOR-EMITTER VOLTAGE
VCE (V)
FORWARD BIAS SAFE OPERATING AREA
10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 TC=25C 2 NON-REPETITIVE 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 100 90
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR CURRENT IC (A)
DERATING FACTOR (%)
80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION
SECOND BREAKDOWN AREA
10 0
50 0
1m
S
COLLECTOR-EMITTER VOLTAGE
COLLECTOR REVERSE CURRENT -IC (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 45 710 1 2 3 4 5 7 10 2 0.5
0.4
D C
S
S
80 100 120 140 160
VCE (V)
CASE TEMPERATURE
TC (C)
Zth (j-c) (C/ W)
10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0
REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL)
0.3
0.2
0.1 0 10 -3 2 3 4 5 7 10 -22 3 4 5 7 10 -1 2 3 4 5 7 10 0
Tj=25C Tj=125C 0.8 1.2 1.6 2.0 2.4
0.4
TIME (s)
COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30DY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 500
REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 VCC=300V 5 IB1=-IB2=0.6A 3 2 Irr (A), Qrr (c) 10 1 7 5 3 2 Tj=25C Tj=125C 10 2
400
10 1 Irr trr (s) FORWARD CURRENT IF (A)
Feb.1999
300
200
100
0 10 0
2 3 4 5 7 10 1
2 3 4 5 7 10 2
10 0 10 0 7 5 Qrr 3 2 trr 10 -1 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
CONDUCTION TIME (CYCLES AT 60Hz)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE ) 10 0 2 3 4 5 710 1 2 3 2.0 1.6 Zth (j-c) (C/ W)
1.2
0.8
0.4 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s)

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