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| MITSUBISHI TRANSISTOR MODULES QM300DY-2H HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-2H * * * * * IC Collector current ........................ 300A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 114 M8 27 25 21.5 2-M6 B2X B2 E2 C1 18 B2X 6 C2E1 E2 B2 21 6 C2E1 114 15 93 E2 38 E2 7 B1X B1 E1 14 C1 6 B1X 8 5.5 E1 B1 4-6.5 93 1 6.5 (7) 34.5 21 Tab#187, t=0.8 Tab#110, t=0.5 21 8 17 8 17 31 1 LABEL 6 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300DY-2H HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1000 1000 1000 7 300 300 1980 16 3000 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M6 2500 1.96~2.94 20~30 8.83~10.8 90~110 1.96~2.94 20~30 1200 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm N*m kg*cm g -- Mounting torque Main terminal screw M8 Mounting screw M6 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Test conditions VCE=1000V, VEB=2V VCB=1000V, Emitter open VEB=7V IC=300A, IB=6A -IC=300A (diode forward voltage) IC=300A, VCE=2.8V/5V Limits Min. -- -- -- -- -- -- 75/100 -- VCC=600V, IC=300A, IB1=-IB2=6A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 4.0 4.0 400 2.5 3.5 1.8 -- 3.0 15 3.0 0.063 0.30 0.04 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300DY-2H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 500 IB=4.0A IB=2.0A 400 IB=1.0A 300 IB=0.5A IB=0.2A 10 4 7 5 3 2 10 3 7 5 3 2 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT IC (A) DC CURRENT GAIN hFE VCE=5.0V VCE=2.8V 200 100 Tj=25C 0 0 1 2 3 4 5 10 2 7 5 3 Tj=25C 2 Tj=125C 10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) BASE CURRENT IB (A) 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 -1 1.8 VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 VCE=2.8V Tj=25C SATURATION VOLTAGE VBE(sat) VCE(sat) IB=6A Tj=25C Tj=125C 2.2 2.6 3.0 3.4 3.8 10 -1 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 4 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 10 2 7 VCC=600V 5 IB1=-IB2=6A 3 Tj=25C 2 Tj=125C ts 10 1 7 5 3 tf 2 10 0 7 5 ton 3 2 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 IC=400A 3 2 IC=200A 1 Tj=25C Tj=125C 0 3 4 5 710 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 2 3 IC=300A BASE CURRENT IB (A) SWITCHING TIME ton, ts, tf (s) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300DY-2H HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 10 2 7 VCC=600V 5 IB1=6A 4 IC=300A Tj=25C 3 Tj=125C 2 ts 10 1 7 5 4 3 2 10 0 10 -1 2 3 4 5 7 10 0 REVERSE BIAS SAFE OPERATING AREA 800 COLLECTOR CURRENT IC (A) ts, tf (s) 600 IB2=-6A IB2=-12A 400 Tj=125C 200 SWITCHING TIME tf 2 3 4 5 7 10 1 0 0 200 400 600 800 1000 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FOWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 TC=25C 2 NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 100 90 DERATING FACTOR OF F. B. S. O. A. 100s 50s COLLECTOR CURRENT IC (A) DC DERATING FACTOR (%) 80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION SECOND BREAKDOWN AREA 200 VCE (V) COLLECTOR-EMITTER VOLTAGE COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 7 10 1 0.08 0.07 0.06 1m s s 80 100 120 140 160 CASE TEMPERATURE TC (C) 10 3 7 5 3 2 10 2 7 5 3 2 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) Zth (j-c) (C/ W) 0.05 0.04 0.03 0.02 0.01 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 10 1 7 5 3 2 10 0 0 Tj=25C Tj=125C 0.4 0.8 1.2 1.6 2.0 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300DY-2H HIGH POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 3200 2800 2400 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 3 7 VCC=600V 5 IB1=-IB2=6A 3 Tj=25C 2 Tj=125C 10 2 7 5 3 2 10 2 Irr Qrr 10 1 2000 1600 Irr (A), Qrr (c) 1200 800 400 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 trr 10 1 10 0 7 5 3 2 10 -1 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 2 3 4 5 7 0.40 0.32 Zth (j-c) (C/ W) 0.24 0.16 0.08 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 TIME (s) Feb.1999 trr (s) |
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