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| MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF891/D NPN Silicon RF Power Transistors . . . designed for 24 volt UHF large-signal, common-emitter amplifier applications in industrial and commercial FM equipment operating in the range of 800 - 960 MHz. * Specified 24 Volt, 900 MHz Characteristics Output Power = 5.0 Watts Power Gain = 9.0 dB Min Efficiency = 50% Min * Series Equivalent Large-Signal Characterization * Capable of Withstanding 20:1 VSWR Load Mismatch at Rated Output Power and Supply Voltage * Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration * Silicon Nitride Passivated * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 50C (1) Derate above 50C Storage Temperature Range Symbol VCEO VCES VEBO IC PD Tstg Value 30 55 4.0 0.6 18 0.143 - 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/C C MRF891 MRF891S 5.0 W, 900 MHz RF POWER TRANSISTORS NPN SILICON CASE 319-07, STYLE 2 MRF891 CASE 319A-02, STYLE 2 MRF891S THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (2) Symbol RJC Max 7.0 Unit C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 20 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 20 mAdc, VBE = 0) Emitter-Base Breakdown Voltage (IE = 0.5 mAdc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc, VBE = 0, TC = 25C) V(BR)CEO V(BR)CES V(BR)EBO ICES 30 55 4.0 -- -- -- -- -- -- -- -- 1.0 Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 200 mAdc, VCE = 5.0 Vdc) hFE 30 -- 150 -- NOTES: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. 2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. REV 6 (c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1994 MRF891 MRF891S 2-11 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 24 Vdc, IE = 0, f = 1.0 MHz) Cob -- 6.5 8.0 pF FUNCTIONAL TESTS Common-Emitter Amplifier Power Gain (Broadband) (VCC = 24 Vdc, Pout = 5.0 W, f = 900 MHz) Collector Efficiency (VCC = 24 Vdc, Pout = 5.0 W, f = 900 MHz) Load Mismatch Stress (VCC = 24 Vdc, Pin = 0.63 W, f = 900 MHz, VSWR = 20:1, all phase angles) Gpe No Degradation in Output Power 9.0 50 10 57 -- -- dB % L1 C7 L2 SHORTED PLUG (FOR VRE TEST) SOCKETS C6 + L4 L3 C3 DUT C9 C5 C11 C12 L5 L6 + VCC + C13 C14 GND C1 C10 T1 T2 T3 0.685 C2 C4 C8 C1 -- 39 pF, 100 Mil Chip Capacitor C2, C8, C15 -- 0.8- 8.0 pF Johansen Gigatrim C3, C4 -- 12 pF, Mini-Unelco C5, C13 -- 1000 pF, 350 V Unelco C6, C14 -- 10 F, 25 V Tantalum C7, C11, C12 -- 91 pF, Mini-Unelco C9 -- 5.0 pF, MIni-Unelco C10 -- 47 pF, 100 Mil Chip Capacitor L1, L6 -- 10 Turns #20 AWG Around 10 Ohm 1/2 Watt Resistor L2, L5 -- Ferrite Bead L3 -- 4 Turns #16 AWG Choke L4 -- 0.5, #18 AWG Wire T1, T4 -- 50 Ohm Microstrip Line T2 -- W = 165 Mils, = 1946 Mils T3 -- W = 166 Mils, = 1563 Mils PC Board -- 0.031 Glass Teflon (r = 2.56) Figure 1. Broadband Test Fixture MRF891 MRF891S 2-12 MOTOROLA RF DEVICE DATA CCC CCC CCC CCC T4 C15 CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCC CCC CCC CCC 8 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 7 6 5 4 3 2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Pin, INPUT POWER (WATTS) 0.8 0.9 1 VCC = 24 Vdc 960 MHz 850 MHz 900 MHz 8 f = 900 MHz 6 Pin = 1 W 0.6 W 4 0.2 W 2 18 20 22 24 VCC, SUPPLY VOLTAGE (VOLTS) 26 28 Figure 2. Output Power versus Input Power Figure 3. Output Power versus Supply Voltage Pout , OUTPUT POWER (WATTS) 6 5 4 3 2 1 0 VCC = 24 Vdc 0.6 W Pout , OUTPUT POWER (WATTS) 7 Pin = 1 W 7 6 5 4 3 2 1 Pin = 0.6 W VCC = 24 Vdc Pout c 60% 50% 0.2 W 2.0:1 INPUT VSWR 850 875 900 925 f, FREQUENCY (MHz) 950 1.6:1 1.2:1 VSWR 850 875 900 925 f, FREQUENCY (MHz) 950 0 Figure 4. Output Power versus Frequency VCC = 24 Vdc, Pout = 5.0 W, Eff > 50% f MHz 850 900 960 960 900 f = 850 MHz Zo = 10 Zin Zin Ohms 1.1 + j3.0 1.0 + j3.25 1.18 + j3.5 Figure 5. Typical Broadband Circuit Performance VCC = 24 Vdc, Pout = 5.0 W, Eff > 50% f MHz 850 900 960 ZOL* Ohms 8.34 - j13.2 9.1 - j13.8 10.4 - j14.6 f = 850 MHz ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power , voltage and frequency. 900 ZOL* 960 Figure 6. Series Equivalent Input Impedance Figure 7. Series Equivalent Output Impedance MOTOROLA RF DEVICE DATA MRF891 MRF891S 2-13 c , COLLECTOR EFFICIENCY 8 8 PACKAGE DIMENSIONS -AL 6 5 4 Q 2 PL 0.15 (0.006) M IDENTIFICATION NOTCH TA M N M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. -N1 2 3 K F D 2 PL 0.38 (0.015) M B J H C E -T0.38 (0.015) M TA M N M M TA N M STYLE 2: PIN 1. 2. 3. 4. 5. 6. EMITTER (COMMON) BASE (INPUT) EMITTER (COMMON) EMITTER (COMMON) COLLECTOR (OUTPUT) EMITTER (COMMON) DIM A B C D E F H J K L N Q INCHES MIN MAX 0.965 0.985 0.355 0.375 0.230 0.260 0.115 0.125 0.102 0.114 0.075 0.085 0.160 0.170 0.004 0.006 0.090 0.110 0.725 BSC 0.225 0.241 0.125 0.135 MILLIMETER MIN MAX 24.52 25.01 9.02 9.52 5.85 6.60 2.93 3.17 2.59 2.90 1.91 2.15 4.07 4.31 0.11 0.15 2.29 2.79 18.42 BSC 5.72 6.12 3.18 3.42 SEATING PLANE CASE 319-07 ISSUE M MRF891 IDENTIFICATION NOTCH 6 A 5 4 K B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.355 0.365 0.225 0.235 0.110 0.125 0.115 0.125 0.075 0.085 0.035 0.045 0.004 0.006 0.090 0.110 MILLIMETERS MIN MAX 9.02 9.27 5.72 5.96 2.80 3.17 2.93 3.17 1.91 2.15 0.89 1.14 0.11 0.15 2.29 2.79 1 2 3 STYLE 2: PIN 1. 2. 3. 4. 5. 6. SEATING PLANE EMITTER BASE EMITTER EMITTER COLLECTOR EMITTER F J D C H DIM A B C D F H J K CASE 319A-02 ISSUE B MRF891S Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF891 MRF891S 2-14 *MRF891/D* MRF891/D MOTOROLA RF DEVICE DATA |
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