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MCC
Features
l l l l Low Leakage
omponents 21201 Itasca Street Chatsworth !"# $
% !"#
MMBD1501(A) THRU MMBD1505(A)
High Conductance Low Leakage Diode 350mW
SOT-23
A D
Surface Mount Package Ideally Suited for Automatic Insertion 150 C Junction Temperature High Conductance
o
Mechanical Data
l Case: SOT-23, Molded Plastic l Terminals: Solderable per MIL-STD-202, Method 208 l Polarity: See Diagram l Weight: 0.008 grams ( approx.)
C
B
Maximum Ratings @ 25oC Unless Otherwise Specified
Characteristic Working Inverse Voltage DC Forward Current Average Rectified Current Recurrent Peak Forward Current Peak Forward Surge Current @ t=1.0s @t=1.0ms Power Dissipation Thermal Resistance Operation & Storage Temp. Range Symbol V IV IF Io if if(surge) Pd R Tj, TSTG Value 180 600 200 700 1.0 2.0 350 357 -55 to +150
o
Unit V mA mA mA A mW C/W
o
F
E
G
H
J
K DIMENSIONS INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37
C
Note: 1) These ratings are based on a max. junction temperature of 150 degrees C
2) These are steady state limits. T he factory should be consulted on applications involving pulsed or low duty cycle operation
Electrical Characteristics @ 25oC Unless Otherwise Specified
Charateristic Breakdown Voltage Symbol BV Min 200 620 720 800 0.83 0.87 0.9 750 850 950 1.1 1.3 1.5 1.0 3.0 10 5.0 4 Max Unit V mV mV mV V V V nA uA nA uA pF Test Cond. IR=5.0uA IF=1.0mA IF =10mA IF=50mA IF=100mA IF=200mA IF =300mA V R=125V o VR=125V T A=150 C VR=180V o V R =180V T A=150 C VR=0V, f=1.0MHz
DIM A B C D E F G H J K
MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020
MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51
NOTE
Suggested Solder Pad Layout
.031 .800 .035 .900 .079 2.000 inches mm
Forward Voltage Drop
VF
Reverse Current
IR
-----
.037 .950 .037 .950
Junction Capacitance
Cj
-----
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MMBD1501(A) thru MMBD1505(A)
REVERSE VOLTAGE vs REVERSE CURRENT BV - 3.0 to 100 uA
VR - REVERSE VOLTAGE (V) 325
Ta= 25C
MCC
REVERSE CURRENT vs REVERSE VOLTAGE IR - 130 - 205 Volts
IR - REVERSE CURRENT (nA) 3
Ta= 25C
300
2
1
275
250
0 130
3
5
10 20 30 50 I R - REVERSE CURRENT (uA)
100
150 170 190 VR - REVERSE VOLTAGE (V)
205
GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature
FORWARD VOLTAGE vs FORWARD CURRENT VF - 1 to 100 uA
V VFF - FORWARD VOLTAGE (mV)
FORWARD VOLTAGE vs FORWARD CURRENT VF - 0.1 to 10 mA
V F V F - FORWARD VOLTAGE (mV)
550 500 450 400 350
Ta= 25C
800 750 700 650 600 550
Ta= 25C
1
2
5 10 20 30 50 IF - FORWARD CURRENT (uA)
3
100
500 0.1
0.2 0.3 0.5 1 2 3 5 I F - FORWARD CURRENT (mA)
10
FORWARD VOLTAGE vs FORWARD CURRENT VF - 10 to 800 mA
VF - FORWARD VOLTAGE (V) 1.2 1.1 1 0.9 0.8 10 20 30 50 100 200 300 500
Ta= 25C
CAPACITANCE vs REVERSE VOLTAGE VR - 0 to 15 V
4 CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0 2 4 6 8 10 REVERSE VOLTAGE (V) 12 14 15
Ta= 25C
IF - FORWARD CURRENT (mA) IF
PD - POWER DISSIPATION (mW)
Average Rectified Current (Io) & Forward Current (I F) versus Ambient Temperature (TA)
500 I - CURRENT (mA) 400 300 200 100 0
IR -F OR WA RD
POWER DERATING CURVE
500 400 300 200 100 0 SOT-23 Pkg
DO-35 Pkg
CU RR EN T
ST
Y Io - A ST VER AT AGE E REC -m TIFIE D CU A RRE NT mA
EA D
0
50 100 150 TA - AMBIENT TEMPERATURE ( o C)
0
50 100 150 IO - AVERAGE TEMPERATURE ( oC)
200
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MMBD1501(A) thru MMBD1505(A)
MCC
CONNECTION DIAGRAMS
3
1501
3
3
1503
11
1 2
1
2 NC 3
1 3
2
1504
1505
MMBD1501 MMBD1503 MMBD1504 MMBD1505
MARKING 11 MMBD1501A 13 MMBD1503A 14 MMBD1504A 15 MMBD1505A
1
2
1
2
A11 A13 A14 A15
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