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 Silicore
IGBT GATE DRIVER D8316
DESCRIPTION
D8316 is a dedicated IC integrating IGBT gate drive circuit on a sing le chip . A high cu rrent directly drives IGBT. Outline Drawing
FEATURE
Can directly control fro m a micro controller. Can directly drive the IGBT gate using a high current. Source current:-200mA (max.), sink cu rrent 1A (max.) Incorporates a diode to protect th e IGBT gate at po wer on.
BLOCK DIAGRAM
Vcc 2 GATEIN 1 30K Comp + Driver
7 DI 6 SO 5 SI 3 NC
GND 4
PIN CONNECTION
D8316
1 2 4 5 3 GATHIN Vcc NC GND SI 6 SO 7 DI
1/5
SHAOXING SILICORE TECHNOLOGY CO.,LTD www. Silicore. com. cn
CHMC
Silicore
PIN FUNCTIONS
PIN NO . 1 2 3 4
D8316
PIN NAME GATEIN Vcc NC GND
FUNCTI ON Gate signal inpu t pin System power supply Not connected GND
PIN PIN NO. NAME 5 6 7 SI SO DI
FUNCTI ON IGBT gate drive pin1 (sink side) IGBT gate drive pin2 (source side) IGBT gate protector diode pin
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Characteristic Collector Supply Voltage Input Vo ltage Power Diss ipation* Operating Te mperature Storage Temp erature Symbol Vcc VIN PD Ta mb Tstg Value 25 GND -0.3~Vcc+0.3 925 -20~85 -55~150 Unit V V mW C C
*When Ta > 25C, PD decreases 7.4 mW per degree.
SHAOXING SILICORE TECHNOLOGY CO.,LTD www. Silicore. com. cn
2/5
CHMC
Silicore
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified: Ta=25C, Vcc=20V)
D8316
Characteristic Supply Vo ltage Block Operating Supply Vo ltage Range Current co nsu mption 1 Current co nsu mption 2 GATEIN Pi n Input Dynamic Range Threshold Voltage 1 Threshold Voltage 1 Input Current Input (Reference) SI Pin "L" level output Vo ltage 1 "L" level output Vo ltage 2 "L" level output Vo ltage 3 Frequency
Test condition
Symbol
Min
Typ
Max
Unit
Vcc GATHI N= GATHI N= H L Icc1 Icc2 VIN
G AT H I N
7 0.7 4.2 1.25 6.25
24 1.9 8.8
V mA mA
0 2.63 1.5 125 2.27 167
Vcc-2.2 3
V V V
GATE Signal LH GATE Signal HL VIN=5V When lo ad C=5600pF R=10k connected VGATHIN=0V VGATHIN=0V IO L =30mA IO L =1A
VTH
G AT H 1
VTH
G AT H 2
ITH
G AT H
249 50
A kHz
fTH
G AT H
VO L VO L VO L VO L
SI1 SI2 SI3
0.7 2 1 1
V V V V
Vcc=7V VGATHIN=0V IOL= 3 0 mA
"L" level output Voltage 4 2 V Vcc < 7V (Output Voltage at Low VGATHIN=0V No Load Supply Voltage) "L" level output Voltage 5 2 V Vcc < 7V (Output Voltage at Low VGATHIN=0V IO L =30mA Supply Voltage) Off Leakage Current VGATHIN=6V VIN=20V SO Pin "H" level output Vo ltage 1 "H" level output Vo ltage 2 Off Leakage Current DI Pin Input Clamp Voltage 1 Input Clamp Voltage 2 IIN= 5 00 mA Vcc=0V IIN=3 0 0 mA
SI4
VO L IOFF
SI5
2 -1 Vcc-2 Vcc-5 -1 1 Vcc+1.5 Vcc+1 1
V A V V A V V
SI
VGATHIN=6V IO H =-30mA VOH VGATHIN=6V IOH=-2 0 0 mA VOH VGATHIN=0V VIN=0V IOFF VF VF
SO1 SO2 SO
DI1 DI2
SHAOXING SILICORE TECHNOLOGY CO.,LTD www. Silicore. com. cn
3/5
CHMC
Silicore
AC CHARACTERISTICS
Characteristic Propagation Delay Time 1 Propagation Delay Time 2 Output Fall Ti me Unless otherwise specified Vcc=20V
D8316
Tamb =2 5 ae (c)
Test condition See test circuit diagram See test circuit diagram See test circuit
Symbol Min tp L L tp H H tf
Typ
Max 2 2 0.5
Unit s s s
AC CHARACTERISTICS TEST CONDITIONS
1(R) Propagation Delay Time 1 tp L L (c) Ti me fro m input of "L" level to GATEIN pin until output reaches 1V
2 (R)
Propagation Delay Time 2
tp H H (c)
Ti me fro m input of "H" level to GATEIN p in until output starts to rise
3 (R)
Output Fall Time
Output fall ti me fro m 90% to 10%.
DIAGRAM OF AC CHARACTERISTICS TEST CIRCUIT
D8316
GATHIN Vcc NC GND SI SO DI
1 GATE signal 0~6V/50kHz 20V
2
3
4
5
6 150 10
7
Measure point 5600pF
10k
SHAOXING SILICORE TECHNOLOGY CO.,LTD www. Silicore. com. cn
4/5
CHMC
Silicore
APPLICATION CIRCUIT
D8316
Vcc Gate Signal GATEIN
2 1 30K Comp + Driver
7 6 5
DI IGBT SO 150 SI 10
4 GND
3 NC
SHAOXING SILICORE TECHNOLOGY CO.,LTD www. Silicore. com. cn
5/5
CHMC


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