View BGD802N_184289.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D252
BGD802N 860 MHz, 18.5 dB gain power doubler amplifier
Product specification Supersedes data of 1999 Mar 22 2001 Nov 2
Philips Semiconductors
Product specification
860 MHz, 18.5 dB gain power doubler amplifier
FEATURES * Extremely flat gain response * Excellent linearity * Extremely low noise * Excellent return loss properties * Silicon nitride passivation * Rugged construction * Gold metallization ensures excellent reliability. APPLICATIONS * CATV systems operating in the 40 to 860 MHz frequency range.
handbook, halfpage
BGD802N
PINNING - SOT115J PIN 1 2 3 5 7 8 9 input common common +VB common common output DESCRIPTION
DESCRIPTION Hybrid amplifier module in a SOT115J package operating at a supply voltage of 24 V (DC).
1
2
3
5
7
8
9
Side view
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA SYMBOL Gp Itot power gain total current consumption (DC) PARAMETER CONDITIONS f = 50 MHz f = 860 MHz VB = 24 V 18 18.5 - MIN. 19 - 410 MAX. UNIT dB dB mA
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VB Vi Tstg Tmb supply voltage RF input voltage storage temperature operating mounting base temperature PARAMETER - - -40 -20 MIN. 25 65 +100 +100 MAX. V dBmV C C UNIT
2001 Nov 2
2
Philips Semiconductors
Product specification
860 MHz, 18.5 dB gain power doubler amplifier
CHARACTERISTICS Table 1 Bandwidth 40 to 860 MHz; VB = 24 V; Tcase = 35 C; ZS = ZL = 75 PARAMETER power gain slope cable equivalent flatness of frequency response input return losses f = 50 MHz f = 860 MHz SL FL s11 f = 40 to 860 MHz f = 40 to 860 MHz f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 640 MHz f = 640 to 860 MHz s22 output return losses f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 860 MHz s21 CTB Xmod CSO d2 Vo F phase response composite triple beat cross modulation composite second order distortion second order distortion output voltage noise figure f = 50 MHz 49 channels flat; Vo = 47 dBmV; measured at 859.25 MHz 49 channels flat; Vo = 47 dBmV; measured at 55.25 MHz 49 channels flat; Vo = 47 dBmV; measured at 860.5 MHz note 1 dim = -60 dB; note 2 f = 50 MHz f = 550 MHz f = 650 MHz f = 750 MHz f = 860 MHz Itot Notes 1. fp = 55.25 MHz; Vp = 44 dBmV; fq = 805.25 MHz; Vq = 44 dBmV; measured at fp + fq = 860.5 MHz. 2. Measured according to DIN45004B: fp = 851.25 MHz; Vp = Vo; fq = 858.25 MHz; Vq = Vo -6 dB; fr = 860.25 MHz; Vr = Vo -6 dB; measured at fp + fq - fr = 849.25 MHz. 3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. total current consumption (DC) note 3 CONDITIONS MIN. 18 18.5 0.2 - 20 18.5 17 15.5 14 20 18.5 17 -45 - - - - 61.5 - - - - - - TYP. 18.5 19.5 0.9 0.1 32 27 24 22 20.5 33 29 22 - -65 -64 -68 -75 63.5 4.5 - - - 6.5 395
BGD802N
SYMBOL Gp
MAX. 19 - 2 0.25 - - - - - - - - +45 -63 -62 -60 -69 - 5.5 6 7 7.5 9 410
UNIT dB dB dB dB dB dB dB dB dB dB dB dB deg dB dB dB dB dBmV dB dB dB dB dB mA
2001 Nov 2
3
Philips Semiconductors
Product specification
860 MHz, 18.5 dB gain power doubler amplifier
Table 2 Bandwidth 40 to 860 MHz; VB = 24 V; Tcase = 30 C; ZS = ZL = 75 PARAMETER power gain slope cable equivalent flatness of frequency response input return losses f = 50 MHz f = 860 MHz SL FL s11 f = 40 to 860 MHz f = 40 to 860 MHz f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 640 MHz f = 640 to 860 MHz s22 output return losses f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 860 MHz s21 CTB Xmod CSO d2 Vo F Itot Notes 1. fp = 55.25 MHz; Vp = 44 dBmV; fq = 805.25 MHz; Vq = 44 dBmV; measured at fp + fq = 860.5 MHz. 2. Measured according to DIN45004B: fp = 851.25 MHz; Vp = Vo; fq = 858.25 MHz; Vq = Vo -6 dB; fr = 860.25 MHz; Vr = Vo -6 dB; measured at fp + fq - fr = 849.25 MHz. 3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. phase response composite triple beat cross modulation composite second order distortion second order distortion output voltage noise figure total current consumption (DC) f = 50 MHz 129 channels flat; Vo = 44 dBmV; measured at 859.25 MHz 129 channels flat; Vo = 44 dBmV; measured at 55.25 MHz 129 channels flat; Vo = 44 dBmV; measured at 860.5 MHz note 1 dim = -60 dB; note 2 see Table 1 note 3 CONDITIONS MIN. 18 18.5 0.2 - 20 18.5 17 15.5 14 20 18.5 17 -45 - - - - 61.5 - - TYP. 18.5 19.5 0.9 0.1 32 27 24 22 20.5 33 29 22 - - - - -75 63.5 - 395
BGD802N
SYMBOL Gp
MAX. 19 - 2 0.25 - - - - - - - - +45 -54 -59 -56 -69 - - 410
UNIT dB dB dB dB dB dB dB dB dB dB dB dB deg dB dB dB dB dBmV dB mA
2001 Nov 2
4
Philips Semiconductors
Product specification
860 MHz, 18.5 dB gain power doubler amplifier
Table 3 Bandwidth 40 to 750 MHz; VB = 24 V; Tcase = 30 C; ZS = ZL = 75 PARAMETER power gain slope cable equivalent flatness of frequency response input return losses f = 50 MHz f = 750 MHz SL FL s11 f = 40 to 750 MHz f = 40 to 750 MHz f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 640 MHz f = 640 to 750 MHz s22 output return losses f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 750 MHz s21 CTB Xmod CSO d2 Vo F Itot Notes 1. fp = 55.25 MHz; Vp = 44 dBmV; fq = 691.25 MHz; Vq = 44 dBmV; measured at fp + fq = 746.5 MHz. 2. Measured according to DIN45004B: fp = 740.25 MHz; Vp = Vo; fq = 747.25 MHz; Vq = Vo -6 dB; fr = 749.25 MHz; Vr = Vo -6 dB; measured at fp + fq - fr = 738.25 MHz. 3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. phase response composite triple beat cross modulation composite second order distortion second order distortion output voltage noise figure total current consumption (DC) f = 50 MHz 110 channels flat; Vo = 44 dBmV; measured at 745.25 MHz 110 channels flat; Vo = 44 dBmV; measured at 55.25 MHz 110 channels flat; Vo = 44 dBmV; measured at 746.5 MHz note 1 dim = -60 dB; note 2 see Table 1 note 3 CONDITIONS MIN. 18 18.5 0.2 - 20 18.5 17 15.5 14 20 18.5 17 -45 - - - - 64 - - TYP. 18.5 - - - 32 27 24 22 20.5 33 29 22 - - - - - - - 395
BGD802N
SYMBOL Gp
MAX. 19 - 2 0.25 - - - - - - - - +45 -59 -60 -60 -72 - - 410
UNIT dB dB dB dB dB dB dB dB dB dB dB dB deg dB dB dB dB dBmV dB mA
2001 Nov 2
5
Philips Semiconductors
Product specification
860 MHz, 18.5 dB gain power doubler amplifier
Table 4 Bandwidth 40 to 650 MHz; VB = 24 V; Tcase = 30 C; ZS = ZL = 75 PARAMETER power gain slope cable equivalent flatness of frequency response input return losses f = 50 MHz f = 650 MHz SL FL s11 f = 40 to 650 MHz f = 40 to 650 MHz f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 650 MHz s22 output return losses f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 650 MHz s21 CTB Xmod CSO d2 Vo F Itot Notes 1. fp = 55.25 MHz; Vp = 44 dBmV; fq = 595.25 MHz; Vq = 44 dBmV; measured at fp + fq = 650.5 MHz. 2. Measured according to DIN45004B: fp = 640.25 MHz; Vp = Vo; fq = 647.25 MHz; Vq = Vo -6 dB; fr = 649.25 MHz; Vr = Vo -6 dB; measured at fp + fq - fr = 638.25 MHz. 3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. phase response composite triple beat cross modulation composite second order distortion second order distortion output voltage noise figure total current consumption (DC) f = 50 MHz 94 channels flat; Vo = 44 dBmV; measured at 649.25 MHz 94 channels flat; Vo = 44 dBmV; measured at 55.25 MHz 94 channels flat; Vo = 44 dBmV; measured at 650.5 MHz note 1 dim = -60 dB; note 2 see Table 1 note 3 CONDITIONS MIN. 18 18.5 0.2 - 20 18.5 17 15 20 18.5 17 -45 - - - - 65 - - TYP. 18.5 - - - 32 27 24 22 33 29 22 - - - - - - - 395
BGD802N
SYMBOL Gp
MAX. 19 - 2 0.2 - - - - - - - +45 -61 -61 -62 -72 - - 410
UNIT dB dB dB dB dB dB dB dB dB dB dB deg dB dB dB dB dBmV dB mA
2001 Nov 2
6
Philips Semiconductors
Product specification
860 MHz, 18.5 dB gain power doubler amplifier
Table 5 Bandwidth 40 to 550 MHz; VB = 24 V; Tcase = 30 C; ZS = ZL = 75 PARAMETER power gain slope cable equivalent flatness of frequency response input return losses f = 50 MHz f = 550 MHz SL FL s11 f = 40 to 550 MHz f = 40 to 550 MHz f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 550 MHz s22 output return losses f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 550 MHz s21 CTB Xmod CSO d2 Vo F Itot Notes 1. fp = 55.25 MHz; Vp = 44 dBmV; fq = 493.25 MHz; Vq = 44 dBmV; measured at fp + fq = 548.5 MHz. 2. Measured according to DIN45004B: fp = 540.25 MHz; Vp = Vo; fq = 547.25 MHz; Vq = Vo -6 dB; fr = 549.25 MHz; Vr = Vo -6 dB; measured at fp + fq - fr = 538.25 MHz. 3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. phase response composite triple beat cross modulation composite second order distortion second order distortion output voltage noise figure total current consumption (DC) f = 50 MHz 77 channels flat; Vo = 44 dBmV; measured at 547.25 MHz 77 channels flat; Vo = 44 dBmV; measured at 55.25 MHz 77 channels flat; Vo = 44 dBmV; measured at 548.5 MHz note 1 dim = -60 dB; note 2 see Table 1 note 3 CONDITIONS MIN. 18 18.5 0.2 - 20 18.5 17 16 20 18.5 17 -45 - - - - 66 - - TYP. 18.5 - - - 32 27 24 22 33 29 22 - - - - - - - 395
BGD802N
SYMBOL Gp
MAX. 19 - 2 0.2 - - - - - - - +45 -65 -63 -65 -74 - - 410
UNIT dB dB dB dB dB dB dB dB dB dB dB deg dB dB dB dB dBmV dB mA
2001 Nov 2
7
Philips Semiconductors
Product specification
860 MHz, 18.5 dB gain power doubler amplifier
PACKAGE OUTLINE Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
BGD802N
SOT115J
D E Z p
A2 1 A L F S W d U2 B yMB p Q e e1 q2 q1 yMB yMB b wM 2 3 5 7 8 9
c
U1
q
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT A2 A max. max. 9.1 b c d D E max. max. max. e e1 F L min. 8.8 p 4.15 3.85 Q max. 2.4 q q1 q2 S U1 U2 max. 8 W w y 0.1 Z max. 3.8
mm 20.8
0.51 0.25 27.2 2.54 13.75 2.54 5.08 12.7 0.38
38.1 25.4 10.2
4.2 44.75
6-32 0.25 UNC
OUTLINE VERSION SOT115J
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-02-06
2001 Nov 2
8
Philips Semiconductors
Product specification
860 MHz, 18.5 dB gain power doubler amplifier
DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS
BGD802N
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Preliminary data
Qualification
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2001 Nov 2
9
Philips Semiconductors
Product specification
860 MHz, 18.5 dB gain power doubler amplifier
NOTES
BGD802N
2001 Nov 2
10
Philips Semiconductors
Product specification
860 MHz, 18.5 dB gain power doubler amplifier
NOTES
BGD802N
2001 Nov 2
11
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613518/03/pp12
Date of release: 2001
Nov 2
Document order number:
9397 750 08851

▲Up To Search▲

Price & Availability of BGD802N

	To Download BGD802N Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .