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 6MBI100S-120
IGBT MODULE ( S series) 1200V / 100A 6 in one-package
Features
* Compact package * P.C.board mount * Low VCE(sat)
IGBT Modules
Applications
* Inverter for motor drive * AC and DC servo drive amplifier * Uninterruptible power supply * Industrial machines, such as welding machines
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25C unless otherwise specified)
Item Collector-Emitter voltage Gate-Emitter voltage Collector Continuous Tc=25C current Tc=80C 1ms Tc=25C Tc=80C 1ms Max. power dissipation (1 device) Operating temperature Storage temperature Isolation voltage Screw torque Symbol VCES VGES IC IC pulse -IC -IC pulse PC Tj Tstg Vis Mounting *1 Rating 1200 20 150 100 300 200 100 200 700 +150 -40 to +125 AC 2500 (1min.) 3.5 Unit V V A A A A W C C V N*m
Equivalent Circuit Schematic
21(P) 13(P)
1(Gu)
5(Gv)
9(Gw)
2(Eu) 19(U)
6(Ev) 17(V)
10(Ew) 15(W)
3(Gx)
7(Gy)
11(Gz)
4(Ex) 20(N)
8(Ey)
12(Ez) 14(N)
*1 : Recommendable value : 2.5 to 3.5 N*m (M5)
Electrical characteristics (Tj=25C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr tr(i) toff tf VF trr Characteristics Min. Typ. - - - - 5.5 7.2 - 2.3 - 2.8 - 12000 - 2500 - 2200 - 0.35 - 0.25 - 0.1 - 0.45 - 0.08 - 2.5 - 2.0 - - Conditions Max. 1.0 0.2 8.5 2.6 - - - - 1.2 0.6 - 1.0 0.3 3.3 - 0.35 VGE=0V, VCE=1200V VCE=0V, VGE=20V VCE=20V, IC=100mA Tj=25C VGE=15V, IC=100A Tj=125C VGE=0V VCE=10V f=1MHz VCC=600V IC=100A VGE=15V RG=12 Tj=25C Tj=125C IF=100A IF=100A, VGE=0V Unit mA A V V pF
s
Turn-off time Diode forward on voltage Reverse recovery time
V s
Thermal resistance characteristics
Item Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 Characteristics Min. Typ. - - - - - 0.05 Conditions Max. 0.18 0.36 - IGBT FWD the base to cooling fin C/W C/W C/W Unit
Thermal resistance
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
6MBI100S-120
Characteristics
Collector current vs. Collector-Emitter voltage
250
IGBT Modules
Collector current vs. Collector-Emitter voltage
250
Tj= 25 C (typ.)
o
Tj= 125 C (typ.)
o
VGE= 20V 200
15V
12V 200
VGE= 20V
15V
12V
Collector current : Ic [ A ]
150 10V
Collector current : Ic [ A ]
150 10V
100
100
50
50 8V 8V
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
Collector current vs. Collector-Emitter voltage VGE=15V (typ.)
250 10
Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25 C (typ.)
o
Tj= 25 C 200
o
Tj= 125 C 8 Collector - Emitter voltage : VCE [ V ]
o
Collector current : Ic [ A ]
150
6
100
4 Ic= 200A 2 Ic= 100A Ic= 50A
50
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25 C
50000 1000
o
Dynamic Gate charge (typ.) Vcc=600V, Ic=100A, Tj= 25 C
25
o
800 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ]
20 Gate - Emitter voltage : VGE [ V ]
10000
Cies
600
15
400
10
200
5
1000 Coes Cres 500 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ] 0 0 200 400 600 800 Gate charge : Qg [ nC ] 0 1000
6MBI100S-120
IGBT Modules
Switching time vs. Collector current (typ.)
Switching time vs. Collector current (typ.)
Vcc=600V,VGE=15V, Rg=12,Tj=25oC
1000 1000
Vcc=600V,VGE=15V, Rg=12,Tj=125oC
toff 500 toff ton tr 500
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
ton tr
tf 100
100 tf
50 0 50 100 Collector current : Ic [ A ] 150 200
50 0 50 100 Collector current : Ic [ A ] 150 200
Switching time vs. Gate resistance (typ.)
Switching loss vs. Collector current (typ.)
Vcc=600V,Ic=100A,VGE=15V,Tj=25oC
5000 ton toff Switching time : ton, tr, toff, tf [ nsec ] tr Switching loss : Eon, Eoff, Err [ mJ/pulse ] 20 25
Vcc=600V,VGE=15V, Rg=12,Tj=125oC
Eon(125 C)
o
1000
Eon(25 C) 15
o
500
Eoff(125 C) 10 Eoff(25 C) Err(125 C) 5 Err(25 C)
o o o
o
100
50 10 50 Gate resistance : Rg [ ] 100 200
0 0 50 100 Collector current : Ic [ A ] 150 200
Switching loss vs. Gate resistance (typ.)
Reverse bias safe operating area
250
Vcc=600V,Ic=100A,VGE=15V ,Tj=125oC
80
+VGE=15V,-VGE<15V, Rg>12,Tj<125oC = = =
Eon Switching loss : Eon, Eoff, Err [ mJ/pulse ] 60 Collector current : Ic [ A ] Eoff Err 0 10 50 Gate resistance : Rg [ ] 100 300
200
150
40
100
20 50
0 0 200 400 600 800 1000 1200 1400 Collector - Emitter voltage : VCE [ V ]
6MBI100S-120
IGBT Modules
Forward current vs. Forward on voltage (typ.)
250 300
Reverse recovery characteristics (typ.)
Vcc=600V,VGE=15V, Rg=12 ,Tj=25oC
Tj=125 C 200
o
Tj=25 C
o
trr(125 C)
o
Reverse recovery time : trr [ nsec ]
Reverse recovery current : Irr [ A ]
100
Forward current : IF [ A ]
Irr(125 C) trr(25 C) Irr(25 C)
o o
o
150
100
50
0 0 1 2 Forward on voltage : VF [ V ] 3 4
10 0 50 100 Forward current : IF [ A ] 150 200
Transient thermal resistance
1
FWD Thermal resistanse : Rth(j-c) [ C/W ]
IGBT
o
0.1
M626
0.01 0.001
0.01
0.1
1
Pulse width : Pw [ sec ]
Outline Drawings, mm
1221 8-R2.250.3 4-o5.50.3 13.09 19.05
19
1100.3 94.50.3 19.05
18
19.05
17
19.05
16 15
11.5
+0.5 0
19.05 11.67
39.90.3
3.81 3.81
11.5
+0.5 0
20
14
57.50.3
500.3
58.42
o2.50.1 1.5 o2.10.1 Section A-A o0.4 Shows theory dimensions 0.80.2 6
621
99.60.3 3.81
21
1
2
3
4
5
6
7
8
9
11
12
4.06 3.50.5 1.50.3
15
15.24 15.24 15.24 15.24 15.24 118.11
13
A
A
1.150.2
20.51
2.50.3
171
6.50.5
10.2


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