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| TIP125, TIP126, TIP127 PNP Version 2004-07-01 Darlington Transistors Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren PNP Collector current - Kollektorstrom Plastic case Kunststoffgehause Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert 1 = B1 2 = C2 3 = E2 5A TO-220AB 2.2 g Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25C) TIP125 Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage B open E open C open - VCE0 - VCB0 - VEB0 Ptot Ptot - IC - IB Tj TS 60 V 60 V Grenzwerte (TA = 25C) TIP126 80 V 80 V 50 V 2 W 1) 65 W 5A 8A 120 mA - 65...+ 150C - 65...+ 150C TIP127 100 V 100 V Power dissipation - Verlustleistung without cooling - ohne Kuhlung with cooling - mit Kuhlung TC = 25C Collector current - Kollektorstrom (dc) Base current - Basisstrom (dc) Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Peak Collector current - Kollektor-Spitzenstrom - ICM Characteristics (Tj = 25C) Min. Collector-Emitter cutoff current - Kollektorreststrom IB = 0, - VCE = 30 V IB = 0, - VCE = 40 V IB = 0, - VCE = 50 V IE = 0, - VCB = 60 V IE = 0, - VCB = 80 V IE = 0, - VCB = 100 V 1 Kennwerte (Tj = 25C) Typ. - - - - - - Max. 500 nA 500 nA 500 nA 200 nA 200 nA 200 nA TIP125 TIP126 TIP127 TIP125 TIP126 TIP127 - ICE0 - ICE0 - ICE0 - ICB0 - ICB0 - ICB0 - - - - - - Collector-Base cutoff current - Kollektorreststrom ) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case Gultig, wenn die Anschludrahte in 5 mm Abstand von Gehause auf Umgebungstemperatur gehalten werden 1 Darlington Transistors TIP125, TIP126, TIP127 Characteristics (Tj = 25C) Min. Emitter-Base cutoff current - Emitterreststrom IC = 0, - VEB = 5 V - IC = 3 A, - IB = 12 mA - IC = 5 A, - IB = 20 mA - IC = 3 A, - VCE = 3 V - VCE = 3 V, - IC = 0.5 A - VCE = 3 V, - IC = 3 A - VCE = 4 V, - IC = 3 A, f = 1 MHz - VCB = 10 V, IE = ie = 0, f = 100 kHz Thermal resistance - Warmewiderstand junction to ambient air - Sperrschicht zu umgebender Luft junction to case - Sperrschicht zu Gehause Admissible torque for mounting Zulassiges Anzugsdrehmoment Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren Equivalent Circuit - Ersatzschaltbild - IEB0 - VCEsat - VCEsat - VBEon hFE hFE hfe CCB0 - - - - 1000 1000 4 - Kennwerte (Tj = 25C) Typ. - - - - - - - - RthA RthC M4 Max. 2 mA 2V 4V 2.5 V - - - 200 pF 62.5 K/W 2) 2 K/W 9 10% lb.in. 1 10% Nm Collector saturation voltage - Kollektor-Sattigungsspg. 1) Base-Emitter on-voltage - Basis-Emitter-Spannung 1) DC current gain - Kollektor-Basis-Stromverhaltnis 1) Small signal current gain - Kleinsignal-Stromverstarkung Collector-Base Capacitance - Kollektor-Basis-Kapazitat TIP120, TIP121, TIP122 C2 T2 B1 T1 E2 1 2 ) Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% ) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case Gultig, wenn die Anschludrahte in 5 mm Abstand von Gehause auf Umgebungstemperatur gehalten werden 2 |
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