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| PD-93760B IRF7530 HEXFET(R) Power MOSFET q q q q q q Trench Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 VDSS = 20V 3 6 4 5 RDS(on) = 0.030 Description New trench HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The new Micro8 package has half the footprint area of the standard SO-8. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. T o p V ie w Micro8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Q Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche EnergyT Gate-to-Source Voltage Junction and Storage Temperature Range Max. 20 5.4 4.3 40 1.3 0.80 10 33 12 -55 to + 150 Units V A W mW/C mJ V C Thermal Resistance Parameter RJA Maximum Junction-to-AmbientS Max. 100 Units C/W www.irf.com 1 02/16/01 IRF7530 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. 20 --- --- --- 0.60 13 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.01 --- --- --- --- --- --- --- --- 18 3.4 3.4 8.5 11 36 16 1310 180 150 Max. Units Conditions --- V VGS = 0V, ID = 250uA --- V/C Reference to 25C, ID = 1mA 0.030 VGS = 4.5V, ID = 5.4A R 0.045 VGS = 2.5V, ID = 4.6A R 1.2 V VDS = VGS, ID = 250A --- S VDS = 10V, ID = 5.4A 1.0 VDS = 16V, VGS = 0V A 25 VDS = 16V, VGS = 0V, TJ = 70C 100 VGS = 12V nA -100 VGS = -12V 26 ID = 5.4A 5.1 nC VDS = 16V 5.1 VGS = 4.5V R --- VDD = 10V --- ID = 1.0A ns --- RG = 6.0 --- RD = 10 R --- VGS = 0V --- pF VDS = 15V --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Q Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 19 13 1.3 A 40 1.2 29 20 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 1.3A, VGS = 0V R TJ = 25C, IF = 1.3A di/dt = 100A/s R D S Notes: Q Repetitive rating; pulse width limited by max. junction temperature. S When mounted on 1 inch square copper board, t<10 sec T Starting TJ = 25C, L = 2.6mH RG = 25, IAS = 5.0A. (See Figure 10) R Pulse width 400s; duty cycle 2%. 2 www.irf.com IRF7530 100 I D , Drain-to-Source Current (A) 2.25V 20s PULSE WIDTH T = 25 C J 1 10 100 I D , Drain-to-Source Current (A) VGS 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V TOP 100 VGS 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V TOP 2.25V 20s PULSE WIDTH T = 150 C J 1 10 100 10 0.1 10 0.1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 ID = 5.0A R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 C TJ = 150 C 1.5 1.0 0.5 10 2.0 V DS = 15V 20s PULSE WIDTH 3.5 4.0 2.5 3.0 4.5 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7530 2000 VGS , Gate-to-Source Voltage (V) 1600 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10 ID = 5.4A 5.0A 8 C, Capacitance (pF) Ciss 1200 VDS = 16V VDS = 10V VDS = 4V 6 800 4 400 C oss C rss 2 0 1 10 100 0 0 5 10 15 20 25 30 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) ISD , Reverse Drain Current (A) TJ = 150 C 10 I D , Drain Current (A) 100 10us 10 100us 1ms TJ = 25 C 1 10ms 1 0.5 V GS = 0 V 1.0 1.5 2.0 0.1 0.1 TA = 25 C TJ = 150 C Single Pulse 1 10 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7530 5.0 80 EAS , Single Pulse Avalanche Energy (mJ) 4.0 I D , Drain Current (A) 60 TOP BOTTOM ID 2.2A 4.0A 5.0A 3.0 40 2.0 20 1.0 0.0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC , Case Temperature ( C) Starting TJ , Junction Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Avalanche Energy Vs. Drain Current 1000 Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.1 1 10 P DM t1 t2 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7530 R DS ( on) , Drain-to-Source On Resistance ( ) 0.04 0.10 R DS(on) , Drain-to -Source Voltage ( ) 0.08 0.03 0.06 Id = 5.0A 0.02 0.04 VGS= 2.5V VGS = 4.5V 0.01 2.0 3.0 4.0 5.0 6.0 7.0 0.02 0 10 20 30 40 VGS, Gate -to -Source Voltage ( V ) VGS, Gate-to-Source Voltage (V) Fig 12. On-Resistance Vs. Gate Voltage Fig 13. On-Resistance Vs. Drain Current 6 www.irf.com IRF7530 Micro8 Package Outline Dimensions are shown in millimeters (inches) LE A D A S S IG N M E N T S D -B3 DDDD 8765 3 E -A1234 SSSG S 1 G 1 S2 G 2 8765 H 0.2 5 (.0 1 0) M A M S ING LE 1234 D U AL 1234 D 1 D 1 D 2 D2 8765 D IM A A1 B C D e e1 E H L IN C H E S M IN .0 3 6 .0 0 4 .0 1 0 .0 05 .1 16 M AX .0 44 .0 08 .0 14 .0 0 7 .1 2 0 M IL L IM E T E R S M IN 0 .9 1 0 .1 0 0 .2 5 0 .1 3 2 .9 5 M AX 1 .11 0 .20 0 .36 0 .1 8 3 .0 5 .0 2 5 6 B A SIC .0 1 2 8 B A SIC .1 1 6 .1 88 .0 1 6 0 .1 20 .1 9 8 .0 2 6 6 0 .6 5 BA S IC 0 .3 3 BA S IC 2.9 5 4 .7 8 0 .4 1 0 3 .0 5 5 .0 3 0 .6 6 6 e 6X e1 A -C B 8X 0 .0 8 (.0 0 3 ) M A1 C AS BS 0 .1 0 ( .00 4 ) L 8X C 8X R E C O M M E N D E D F O O T P R IN T 1 .04 ( .04 1 ) 8X 0 .38 8X ( .0 1 5 ) 3 .2 0 ( .1 2 6 ) 4 .24 5 .2 8 ( .1 6 7 ) ( .20 8 ) N O TES : 1 D IM E N SIO NIN G A ND T OL ER A NC IN G P E R A N SI Y 14 .5M -1982 . 2 C ON TR OL LING DIM EN S ION : IN C H. 3 D IM E N SIO NS DO N O T IN CL UD E M OLD F L AS H . 0 .6 5 6 X ( .02 5 6 ) Micro8 Part Marking Information EXAMPLE: T HIS IS AN IRF7501 LOT CODE (XX) DATE CODE (YW) Y = YEAR W = WEEK PART NUMBER WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR DATE CODE EXAMPLES : YWW = 9503 = 5C YWW = 9532 = EF YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D 24 25 26 X Y Z WW = (27-52) IF PRECEDED BY A LETTER YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D www.irf.com 50 51 52 X Y Z 7 IRF7530 Micro8 Tape & Reel Information Dimensions are shown in millimeters (inches) T E R M IN A L N U M B E R 1 1 2 .3 ( .4 8 4 ) 1 1 .7 ( .4 6 1 ) 8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 ) F E E D D IR E C T IO N N OTES: 1 . O U TL IN E C O N F O R M S TO E IA -4 81 & E IA -54 1. 2 . C O N TR O LL IN G D IM E N SIO N : M IL LIM E TE R. 3 3 0 .0 0 (1 2 .9 9 2 ) MAX. 1 4 .4 0 ( .5 6 6 ) 1 2 .4 0 ( .4 8 8 ) NO TES : 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/01 8 www.irf.com |
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