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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6133 Issued Date : 1993.06.18 Revised Date : 2002.02.18 Page No. : 1/4
HPH2369
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HPH2369 is designed for general purpose switching and amplifier applications.
Features
* Low Collector Saturation Voltage * High speed switching Transistor
TO-92
Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature .................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Ta=25C) ................................................................................ 625 mW * Maximum Voltages and Currents (Ta=25C) VCBO Collector to Base Voltage ......................................................................................... 40 V VCES Collector to Emitter Voltage ...................................................................................... 40 V VCEO Collector to Emitter Voltage ...................................................................................... 15 V VEBO Emitter to Base Voltage ........................................................................................... 4.5 V IC Collector Current ....................................................................................................... 500 mA
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVCES BVEBO ICBO ICES IEBO *VCE(sat)1 *VCE(sat)2 *VCE(sat)3 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 fT Cob Min. 40 15 40 4.5 700 40 20 500 Typ. 80 Max. 400 300 100 250 300 600 850 1.5 120 4 Unit V V V V nA nA nA mV mV mV mV V Test Conditions IC=100uA, IE=0 IC=10mA, IB=0 IC=10uA, VBE=0 IE=10uA, IC=0 VCB=20V, IE=0 VCE=25V, VBE=0 VEB=2V, IC=0 IC=10mA, IB=1mA IC=10mA, IB=0.3mA IC=100mA, IB=10mA IC=10mA, IB=1mA IC=100mA, IB=1mA IC=10mA, VCE=1V IC=100mA, VCE=2V IC=10mA, VCE=10V, f=100MHZ VCB=5V, f=1MHz, IE=0
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HPH2369 HSMC Product Specification
MHz pF
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
100 125 C 25 C 75 C
o o o
Spec. No. : HE6133 Issued Date : 1993.06.18 Revised Date : 2002.02.18 Page No. : 2/4
Current Gain & Collector Current
100 125 C 25 C 75 C
o o o
hFE
10
hFE
hFE @ VCE=1V
10
hFE @ VCE=2V 1
1 1 10 100 1000
0.1
1
10
100
1000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage & Collector Current
100000
10000
Saturation Voltage & Collector Current
Saturation Voltage (mV)
Saturation Voltage (mV)
10000
1000
1000
75 C 125 C 100 25 C VCE(sat) @ IC=33IB 10 0.1 1 10 100 1000
o o
o
75 C 100
o
o
125 C
o
25 C 10 0.1 1 10
VCE(sat) @ IC=10IB
100
1000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage & Collector Current
10000
On Voltage & Collector Current
1
VBE(on) @ VCE=1V
Saturation Voltage (mV)
75 C 1000 25 C
o
o
125 C VBE(sat) @ IC=10IB 100 0.1 1 10 100 1000
o
On Voltage (mV)
0.1 0.1 1 10 100
Collector Current-IC (mA)
Collector Current (mA)
HPH2369
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6133 Issued Date : 1993.06.18 Revised Date : 2002.02.18 Page No. : 3/4
Capacitance & Reverse-Biased Voltage
10 10000
Cutoff Frequency & Collector Current
1000
Cutoff Frequency (GHz)
Capacitance (pF)
fT @ VCE=10V 100
10
Cob
1
1 0.1 1 10 100
0.1 1 10 100
Reverse-Biased Voltage (V)
Collector Current-IC (mA)
Safe Operating Area
10000
PD-Ta
700 600
Collector Current-IC (mA)
1000 PT=1ms PT=100ms PT=1s 100
Power Dissipation-PD (mW)
500 400 300 200 100 0
10
1 1 10 100
0
50
100
o
150
200
Forward Voltage-VCE (V)
Ambient Temperature-Ta ( C)
HPH2369
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-92 Dimension
A B
1 2 3
Date Code
Spec. No. : HE6133 Issued Date : 1993.06.18 Revised Date : 2002.02.18 Page No. : 4/4
2
Marking:
H PH 2369 Control Code
3
C
Style: Pin 1.Collector 2.Base 3.Emitter
D
H I E F
G
1
3-Lead TO-92 Plastic Package HSMC Package Code: A
*: Typical
DIM A B C D E F
Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480
Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76
DIM G H I 1 2 3
Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5 *2 *2
Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5 *2 *2
Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
* Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HPH2369
HSMC Product Specification

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