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DISCRETE SEMICONDUCTORS
DATA SHEET
BFR505 NPN 9 GHz wideband transistor
Product specification File under Discrete Semiconductors, SC14 September 1995
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
FEATURES * High power gain * Low noise figure * High transition frequency * Gold metallization ensures excellent reliability. DESCRIPTION
1
BFR505
PINNING PIN 1 2 3 base emitter collector
fpage
DESCRIPTION Code: N30
3
2
MSB003
The BFR505 is an npn silicon planar epitaxial transistor, intended for applications in the RF frontend in wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV). The transistor is encapsulated in a plastic SOT23 envelope.
Top view
Fig.1 SOT23.
QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE Cre fT GUM PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain up to Ts = 135 C; note 1 IC = 5 mA; VCE = 6 V IC = ic = 0; VCB = 6 V; f = 1 MHz IC = 5 mA; VCE = 6 V; f = 1 GHz IC = 5 mA; VCE = 6 V; Tamb = 25 C; f = 900 MHz IC = 5 mA; VCE = 6 V; Tamb = 25 C; f = 2 GHz S212 F insertion power gain noise figure IC = 5 mA; VCE = 6 V; Tamb = 25 C; f = 900 MHz s = opt; IC = 1.25 mA; VCE = 6 V; Tamb = 25 C; f = 900 MHz s = opt; IC = 5 mA; VCE = 6 V; Tamb = 25 C; f = 900 MHz s = opt; IC = 1.25 mA; VCE = 6 V; Tamb = 25 C; f = 2 GHz Note 1. Ts is the temperature at the soldering point of the collector tab. open emitter RBE = 0 CONDITIONS MIN. - - - - 60 - - - - 13 - - - TYP. - - - - 120 0.3 9 17 10 14 1.2 1.6 1.9 MAX. UNIT 20 15 18 150 250 - - - - - 1.7 2.1 - pF GHz dB dB dB dB dB dB V V mA mW
September 1995
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCES VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature continuous up to Ts = 135 C; note 1 open emitter RBE = 0 CONDITIONS MIN. - - - - - -65 -
BFR505
MAX. 20 15 2.5 18 150 150 175
UNIT V V V mA mW C C
THERMAL RESISTANCE SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER from junction to soldering point (note 1) THERMAL RESISTANCE 260 K/W
September 1995
3
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO hFE Ce Cc Cre fT GUM PARAMETER collector cut-off current DC current gain emitter capacitance collector capacitance feedback capacitance transition frequency maximum unilateral power gain (note 1) CONDITIONS IE = 0; VCB = 6 V IC = 5 mA; VCE = 6 V IC = ic = 0; VEB = 0.5 V; f = 1 MHz IE = ie = 0; VCB = 6 V; f = 1 MHz IC = 0; VCB = 6 V; f = 1 MHz IC = 5 mA; VCE = 6 V; f = 1 GHz IC = 5 mA; VCE = 6 V; Tamb = 25 C; f = 900 MHz IC = 5 mA; VCE = 6 V; Tamb = 25 C; f = 2 GHz S212 F insertion power gain noise figure IC = 5 mA; VCE = 6 V; Tamb = 25 C; f = 900 MHz s = opt; IC = 5 mA; VCE = 6 V; Tamb = 25 C; f = 900 MHz s = opt; IC = 5 mA; VCE = 6 V; Tamb = 25 C; f = 900 MHz s = opt; IC = 5 mA; VCE = 6 V; Tamb = 25 C; f = 2 GHz PL1 ITO Notes 1. GUM is the maximum unilateral power gain, assuming S12 is zero and S 21 G UM = 10 log ------------------------------------------------------------- dB. 2 2 1 - S 11 1 - S 22 2. IC = 5 mA; VCE = 6 V; RL = 50 ; Tamb = 25 C; fp = 900 MHz; fq = 902 MHz; measured at f(2p-q) = 898 MHz and f(2q-p) = 904 MHz.
2
BFR505
MIN. TYP. MAX. UNIT - 60 - - - - - - 13 - - - - - - 120 0.4 0.4 0.3 9 17 10 14 1.2 1.6 1.9 4 10 50 250 - - - - - - - 1.7 2.1 - - - pF pF pF GHz dB dB dB dB dB dB dBm dBm nA
output power at 1 dB gain compression third order intercept point
IC = 5 mA; VCE = 6 V; RL = 50 ; Tamb = 25 C; f = 900 MHz note 2
September 1995
4
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505
MRA718 - 1
200 handbook, halfpage P tot (mW) 150
handbook, halfpage
250
MRA719
hFE 200
150 100 100 50 50
0 0 50 100 150 Ts ( o C) 200
0 10-3
10-2
10-1
1
10
102 IC (mA)
VCE = 6 V.
Fig.2 Power derating curve.
Fig.3
DC current gain as a function of collector current.
handbook, halfpage
0.4
MRA720
12 fT (GHz) 8
MRA721
Cre (pF) 0.3
VCE = 6V
VCE = 3V
0.2
4 0.1
0 0 2 4 6 8 10 VCB (V) 10-1 1 10 IC (mA) 102
Ic = 0; f = 1 MHz.
Tamb = 25 C; f = 1 GHz.
Fig.4
Feedback capacitance as a function of collector-base voltage.
Fig.5
Transition frequency as a function of collector current.
September 1995
5
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505
handbook, halfpage
25
MRA764
handbook, halfpage
25
MRA765
gain (dB) 20 MSG 15 GUM
gain (dB) 20
15
10
10
MSG
Gmax GUM
5
5
0 0 4 8 IC (mA) 12
0 0 4 8 IC (mA) 12
VCE = 6 V; f = 900 MHz.
VCE = 6 V; f = 2 GHz.
Fig.6 Gain as a function of collector current.
Fig.7 Gain as a function of collector current.
MRA766
MRA767
handbook, halfpage
50
handbook, halfpage
50
gain (dB) 40
GUM
gain (dB) 40
GUM
30 MSG 20
30 MSG 20
10
Gmax
10
Gmax
0 10
102
103
f (MHz)
104
0 10
10
2
103
f (MHz)
10
4
VCE = 6 V; Ic = 1.25 mA.
VCE = 6 V; Ic = 5 mA.
Fig.8 Gain as a function of frequency.
Fig.9 Gain as a function of frequency.
September 1995
6
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505
handbook, halfpage
5
MRA726
Fmin (dB) 4 f = 900 MHz
20 Gass (dB) 15
handbook, halfpage
5
MRA727
Fmin (dB) IC = 1.25 mA 4
5 mA
20 Gass (dB) 15
Gass 3 Gass 2 2000 MHz 1000 MHz 900 MHz 500 MHz Fmin 0 1 1.25 mA 0 10-1 -5 10 0 102 -5 104 1000 MHz 2000 MHz 10 3 10
5
2 5 mA
5
1
Fmin
0
1
IC (mA)
103
f (MHz)
VCE = 6 V.
VCE = 6 V.
Fig.10 Minimum noise figure and associated available gain as functions of collector current.
Fig.11 Minimum noise figure and associated available gain as functions of frequency.
handbook, full pagewidth
pot. unst. region 135
90 1.0 1 45 0.8 0.6
0.5
2
stability circle
0.2
5 Fmin = 1. 2 dB 0.2 0.5 1 OPT F = 1.5 dB 5 F = 2 dB
0.4 0.2 0 0
180
0
0.2
F = 3 dB
5
-135
0.5 1
2
-45
MRA728
1.0
Zo = 50 . VCE = 6 V; IC = 5 mA; f = 900 MHz.
-90
Fig.12 Noise circle figure.
September 1995
7
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505
handbook, full pagewidth
pot. unst. region 135
90 1.0 1 0.5 OPT 2 45 0.8 0.6 0.4 0.2
0.2 stability circle 180 0 0.2 0.5
Fmin = 1. 9 dB F = 2.5 dB 1 2 F = 3 dB F = 4 dB
5
5
0
0
0.2
5
-135
0.5 1
2
-45
MRA729
1.0
Zo = 50 . VCE = 6 V; IC = 5 mA; f = 2000 MHz.
-90
Fig.13 Noise circle figure.
September 1995
8
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505
90 1.0 1 135 0.5 2 45 0.8 0.6 0.4 0.2 180 0 0.2 0.5 3 GHz 1 2 5 40 MHz 0 0
0.2
5
0.2
5
-135
0.5 1
2
-45
MRA722
1.0
-90 VCE = 6 V; IC = 5 mA. Zo = 50 .
Fig.14 Common emitter input reflection coefficient (S11).
handbook, full pagewidth
90
135
45
180 15
40 MHz 12 9 6 3
3 GHz
0
-135
-45
-90 VCE = 6 V; IC = 5 mA.
MRA723
Fig.15 Common emitter forward transmission coefficient (S21).
September 1995
9
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505
handbook, full pagewidth
90
135
45
3 GHz
180 0.5
40 MHz 0.4 0.3 0.2 0.1
0
-135
-45
-90 VCE = 6 V; IC = 5 mA.
MRA724
Fig.16 Common emitter reverse transmission coefficient (S12).
handbook, full pagewidth
90 1.0 1 135 0.5 2 45 0.8 0.6 0.4 0.2 180 0 0.2 0.5 1 2 5 40 MHz 0 0
0.2
5
0.2
3 GHz
5
-135
0.5 1
2
-45
MRA725
1.0
-90 VCE = 6 V; IC = 5 mA. Zo = 50 .
Fig.17 Common emitter output reflection coefficient (S22).
September 1995
10
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
BFR505
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
September 1995
11
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BFR505
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1995
12

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