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Datasheet File OCR Text: |
N-Channel JFET High Frequency Amplifier CORPORATION 2N4416 / 2N4416A / PN4416 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Gate-Source or Gate-Drain Voltage 2N4416, PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30V 2N4416A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -35V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Storage Temperature Range 2N4416/2N4416A . . . . . . . . . . . . . . . . . . . -65oC to +200oC PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55oC +150oC Operating Temperature Range 2N4416/2N4416A . . . . . . . . . . . . . . . . . . . -65oC to +200oC PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to +135oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate above 25oC 2N4416/2N4416A . . . . . . . . . . . . . . . . . . . . . . . . 1.7mW/ oC PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.7mW/ oC NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. * Low Noise * Low Feedback Capacitance * Low Output Capacitance * High Transconductance * High Power Gain PIN CONFIGURATION TO-72 TO-92 G D C S SD G CJ1 ORDERING INFORMATION Part 2N4416 2N4416A PN4416 X2N4416 Package Hermetic TO-72 Hermetic TO-72 Plastic TO-92 Sorted Chips in Carriers Temperature Range -55oC to +135oC -55oC to +135oC -55oC to +135oC -55oC to +135oC 2N4416 / 2N4416A / PN4416 CORPORATION ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified) SYMBOL IGSS PARAMETER Gate Reverse Current -0.1 2N4416/PN4416 BVGSS Gate-Source Breakdown Voltage 2N4416A 2N4416/PN4416 VGS(off) VGS(f) IDSS gfs gos Crss Ciss Coss Gate-Source Cutoff Voltage 2N4416A Gate-Source Forward Voltage Drain Current at Zero Gate Voltage Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Reverse Transfer Capacitance (Note 1) Common-Source Input Capacitance (Note 1) Common-Source Input Capacitance (Note 1) 5 4500 -2.5 -6 1 15 7500 50 0.8 4 pF 2 V mA S s pF f = 1MHz VDS = 15V, VGS = 0 f = 1kHz IG = 1mA, VDS = 0 -35 -6 VDS = 15V, ID = 1nA V -30 IG = -1A, VDS = 0 A TA = 150oC MIN MAX -0.1 UNITS nA TEST CONDITIONS VGS = -20V, VDS = 0 ELECTRICAL CHARACTERISTICS (Continued) (TA = 25oC unless otherwise specified) 100MHz SYMBOL PARAMETER MIN giss biss goss boss gfs Gps NF Common-Source Input Conductance Common-Source Input Susceptance Common-Source Output Conductance Common-Source Output Susceptance Common-Source Forward Transconductance Common-Source Power Gain Noise Figure (Note 1) 18 2 MAX 100 2500 75 1000 4000 10 dB 4 VDS = 15V, ID = 5mA, RG = 1k VDS = 15V, ID = 5mA (Note 1) MIN MAX 1000 10,000 100 4000 S VDS = 15V, VGS = 0 (Note 1) 400MHz UNITS TEST CONDITIONS NOTE 1: For design reference only, not 100% tested. |
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