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| SI4427BDY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.0105 @ VGS = - 10 V - 30 0.0125 @ VGS = - 4.5 V 0.0195 @ VGS = - 2.5 V FEATURES ID (A) - 12.6 - 11.5 - 9.2 D TrenchFETr Power MOSFETS S SO-8 S S S G 1 2 3 4 Top View D Ordering Information: SI4427BDY SI4427BDY-T1 (with Tape and Reel) P-Channel MOSFET 8 7 6 5 D G D D D ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C ID TA = 70_C IDM IS - 2.5 2.5 1.6 - 55 to 150 - 10.1 - 50 - 1.3 1.5 0.9 W _C - 7.7 A Symbol VDS VGS 10 secs Steady State - 30 "12 Unit V - 12.6 - 9.7 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72295 S-31411--Rev. A, 07-Jul-03 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 40 70 15 Maximum 50 85 18 Unit _C/W C/W 1 SI4427BDY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "12 V VDS = - 24 V, VGS = 0 V VDS = - 24 V, VGS = 0 V, TJ = 55_C VDS v - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 12.6 A Drain-Source On-State Resistancea rDS(on) VGS = - 4.5 V, ID = - 11.5 A VGS = - 2.5 V, ID = - 5.1 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = - 15 V, ID = - 12.6 A IS = - 2.5 A, VGS = 0 V - 50 0.0088 0.0105 0.0150 44 - 0.8 - 1.2 0.0105 0.0125 0.0195 S V W - 0.60 - 1.4 "100 -1 -5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = - 2.5 A, di/dt = 100 A/ms VDD = - 15 V, RL = 15 W ID ^ - 1 A, VGEN = - 10 V, RG = 6 W VDS = - 15 V, VGS = - 4.5 V, ID = - 12.6 A 47.2 9.5 16.6 12 15 242 110 70 20 25 360 165 110 ns 70 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 2.5 V 40 I D - Drain Current (A) 2V 30 I D - Drain Current (A) 40 50 Transfer Characteristics 30 20 20 TC = 125_C 25_C - 55_C 10 1.5 V 10 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72295 S-31411--Rev. A, 07-Jul-03 www.vishay.com 2 SI4427BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.030 r DS(on) - On-Resistance ( W ) 6000 Vishay Siliconix Capacitance 0.025 C - Capacitance (pF) 5000 Ciss 4000 0.020 VGS = 2.5 V 0.015 VGS = 4.5 V 0.010 VGS = 10 V 0.005 3000 2000 Coss 1000 Crss 0.000 0 10 20 30 40 50 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 12.6 A 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 12.6 A 1.4 6 r DS(on) - On-Resistance (W) (Normalized) 40 60 80 100 1.2 4 1.0 2 0.8 0 0 20 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.030 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 0.025 ID = 12.6 A I S - Source Current (A) TJ = 150_C 10 0.020 0.015 TJ = 25_C 0.010 0.005 1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72295 S-31411--Rev. A, 07-Jul-03 www.vishay.com 3 SI4427BDY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 30 25 0.4 V GS(th) Variance (V) ID = 250 mA 20 Power (W) Single Pulse Power, Junction-to-Ambient 0.2 15 10 0.0 5 - 0.2 - 50 - 25 0 25 50 75 100 125 150 0 10 -2 10 -1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Safe Operating Area 100 rDS(on) Limited 10 I D - Drain Current (A) IDM Limited P(t) = 0.0001 P(t) = 0.001 P(t) = 0.01 1 ID(on) Limited P(t) = 0.1 P(t) = 1 0.1 TA = 25_C Single Pulse BVDSS Limited P(t) = 10 dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 70_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 www.vishay.com 4 Document Number: 72295 S-31411--Rev. A, 07-Jul-03 SI4427BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72295 S-31411--Rev. A, 07-Jul-03 www.vishay.com 5 |
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