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| RB705D Diodes Schottky barrier diode RB705D Applications General purpose detection High speed switching External dimensions (Units : mm) 2.90.2 1.90.2 0.95 0.95 1.1 +0.2 -0.1 0.80.1 1.6 0.4 0.15 (All leads have the same dimensions) Construction Silicon epitaxial planar ROHM : SMD3 EIAJ : SC-59 JEDEC : SOT-346 Circuit Absolute maximum ratings (Ta = 25C) Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature 60 Hz for 1 Symbol VRM VR IO IFSM Tj Tstg Limits 40 40 30 200 125 -40~+125 Unit V V mA mA C C Electrical characteristics (Ta = 25C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF IR CT Min. - - - Typ. - - 2.0 Max. 0.37 1 - Unit V A pF IF=1mA VR=10V VR=1V, f=1MHz Conditions Note) ESD sensitive product handling required. 0.3~0.6 D3H Features 1) Small surface mounting type. (SMD3) 2) Low reverse current and low forward voltage. 3) Multiple diodes with common cathode configuration. 2.80.2 +0.2 -0.1 0~0.1 +0.1 -0.05 +0.1 -0.06 RB705D Diodes Electrical characteristic curves (Ta = 25C) Typ. pulse measurement Ta=125C REVERSE CURRENT : IR (A) 100m 10m =1 25 C Ta=75C 10 Ta=75C CAPACITANCE BETWEEN TERMINALS : CT (pF) 1 100 100 FORWARD CURRENT : IF (A) 10 1 Ta=25C 1m 100 10 1 0 Ta Ta=25C Ta=-25C 100n 1 10n Ta=-25C 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1n 0 5 10 15 20 25 30 35 0.1 0 5 10 15 20 25 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig. 1 Forward characteristics Fig. 2 Reverse characteristics Fig. 3 Capacitance between terminals characteristics 10 REVERSE RECOVERY TIME : trr (ns) 5 100 Io CURRENT (%) 4 8 12 16 20 24 28 2 1 0.5 80 60 40 20 0 0 0.2 0.1 0 25 50 75 100 125 FORWARD CURRENT : IF (mA) AMBIENT TEMPERATURE : Ta (C) Fig. 4 Reverse recovery time characteristics Fig. 5 Derating curve (mounting on glass epoxy PCBs) |
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