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| RB461F Diodes Schottky barrier diode RB461F !Applications Low-power rectification For switching power supply !External dimensions (Units : mm) 2.00.2 1.30.1 0.65 0.65 0.3 0.90.1 0.6 0.30.1 0.150.05 (All leads have the same dimensions) !Construction Silicon epitaxial planar ROHM : UMD3 EIAJ : SC - 70 JEDEC : SOT - 323 !Circuit !Absolute maximum ratings (Ta=25C) Parameter Peak reverse voltage DC reverse voltage DC forward current Peak forward surge current Junction temperature Storage temperature 60Hz for 1 Symbol VRM VR IF IFSM Tj Tstg Limits 25 20 0.7 3 125 -40+125 Unit V V A A C C !Electrical characteristics (Ta=25C) Parameter Forward voltage Reverse current Symbol VF IR Min. - - Typ. - - Max. 0.49 200 Unit V A IF=700mA VR=20V Conditions Note) ESD sensitive product handling required. 0.1Min. 3B !Features 1) Small surface mounting type. (UMD3) 2) Ultra low VF.(VF=0.45V Typ. at 0.7A) 3) IF=0.7A guaranteed despite the size. 1.250.1 2.10.1 00.1 RB461F Diodes !Electrical characteristic curves (Ta=25C) 10 REVERSE CURRENT : IR (mA) 1000 100 Ta=125C 10 1 100 10 1 0.1 0 -25C 75C 10000 f=1MHz TERMINAL CAPACITANCE : CT (pF) FORWARD CURRENT : IF (A) 1 1000 100m Ta =1 25 C 75 C C 100 25 10m -25 C 25C 10 1m 0.1m 0 0.1 0.2 0.3 0.4 0.5 0.6 10 20 30 40 50 60 70 1 0 5 10 15 20 25 30 35 40 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig.1 Forward characteristics Fig.2 Reverse characteristics Fig.3 Capacitance between terminals characteristics AVERAGE RECTIFIED FORWARD CURRENT : IO (A) FORWARD POWER DISSIPATION : PF (W) 0.6 D=0.8 DC 1.0 DC D=0.8 sine IF IO Tp T D=Tp/T VR=VRM / 2 0.5 0.4 0.3 0.2 D=0.05 sine D=0.3 D=0.2 D=0.1 D=0.5 0.8 D=0.5 0.6 D=0.3 D=0.2 0.4 IF IO Tp D=0.1 D=0.05 0.1 0 0 T D=Tp/T Tj=Tj Max. 0.2 0.2 0.4 0.6 0.8 1.0 1.2 0 0 25 50 75 100 125 AVERAGE RECTIFIED FORWARD CURRENT : IO (A) AMBIENT TEMPERATURE : Ta (C) Fig.4 Forward power dissipation characteristics Fig.5 Derating curve (when mounted on a glass epoxy PCBs board) |
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