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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3304
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3304 is N-Channel MOS FET device that features a Low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply.
ORDERING INFORMATION
PART NUMBER 2SK3304 PACKAGE TO-3P
FEATURES
* Low gate charge : QG = 44 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 7.0 A) * Gate voltage rating : 30 V * Low on-state resistance : RDS(on) = 2.0 MAX. (VGS = 10 V, ID = 4.0 A) * Avalanche capability ratings (TO-3P)
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse)
Note1
VDSS VGSS(AC) ID(DC) ID(pulse) PT PT Tstg
Note2 Note2
900 30 7 21 130 3.0 -55 to + 150 7 147
V V A A W W C A mJ
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Storage Temperature Single Avalanche Current Single Avalanche Energy
IAS EAS
Notes 1. PW 10 s, Duty cycle 1 % 2. Starting Tch = 25C, VDD = 150 V, RG = 25 , VGS = 20 V 0 V
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D13992EJ1V0DS00 (1st edition) Date Published June 2000 NS CP(K) Printed in Japan
(c)
2000
2SK3304
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTICS Drain Leakage Current Gate to Source Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VDS = 900 V, VGS = 0 V VGS = 30 V, VDS = 0 V VDS = 10 V, ID = 1.0 mA VDS = 20 V, ID = 4.0 A VGS = 10 V, ID = 4.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 150 V ID = 4.0 A VGS(on) = 10 V RG = 10 , RL 36 VDD = 450 V VGS = 10 V ID = 7.0 A IF = 7.0 A, VGS = 0 V IF = 7.0 A, VGS = 0 V di/dt = 50 A/s 2.5 2.5 4.7 1.6 1300 240 55 20 44 73 45 44 6 28 1.0 2.4 13.5 2.0 MIN. TYP. MAX. 100 100 3.5 UNIT
A
nA V S pF pF pF ns ns ns ns nC nC nC V
s C
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V BVDSS VDS VGS 0 50 L VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T. RL PG. RG VDD ID
90 % 90 %
VGS VGS
Wave Form
0
10 %
VGS(on)
90 %
IAS ID VDD
ID ID
Wave Form
0 10 %
10 %
= 1 s Duty Cycle 1 %
td(on) ton
tr td(off)
toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA 50 RL VDD
PG.
2
Data Sheet D13992EJ1V0DS00
2SK3304
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 140
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
20 40 60 80 100 120 140 160
100 80 60 40 20
120 100 80 60 40 20 0 20 40 60 80 100 120 140 160
0
TC - Case Temperature - C
TC - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA 100
ID(pulse) = 21 A PW
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 10 8
ID - Drain Current - A
10
1
ID(DC) = 7 A d ite V) Lim10 n) = o S( GS RD t V (a
s
1m
Po we r
ID - Drain Current - A
=1
00
VGS = 10 V VGS = 20 V VGS = 6 V
s
6
10
Di ss
m 0m s s ip at io n Li m
10
4
ite
0.1 1
TC = 25C Single Pulse 10 100
d
2 Pulsed 1000 0 4 8 12 16 20 VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS 100
ID - Drain Current - A
10
TA = 125C 75C 25C -25C
1
0.1
0.01 0
Pulsed 5 10 15 VGS - Gate to Source Voltage - V
Data Sheet D13992EJ1V0DS00
3
2SK3304
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000
rth(t) - Transient Thermal Resistance - C/W
100
Rth(ch-A)= 41.7 C
10 Rth(ch-C)= 0.96 C
1
0.1
0.01 0.001 0.0001 TC = 25C Single Pulse 0.001 0.01 0.1 1 10 100 1000
PW - Pulse Width - s
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 5.0 Pulsed 4.0
| yfs | - Forward Transfer Admittance - S
100
10
TA = -25C 25C 75C 125C
RDS(on) - Drain to Source On-state Resistance -
3.0
2.0
1
ID = 7 A ID = 4 A
1.0
0.1 0.1
VDS = 20 V Pulsed 1 10 100
0.0
0
5
10
15
20
25
ID - Drain Current - A
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 8.0
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
VGS(off) - Gate to Source Cut-off Voltage - V
Pulsed VGS = 10 V
5.0 VDS = 10 V ID = 1.0 mA 4.0 3.0
6.0
4.0
2.0 1.0 0.0 -50
2.0
0.0 0.01
0.1
1
10
100
0
50
100
150
ID - Drain Current - A
Tch - Channel Temperature - C
4
Data Sheet D13992EJ1V0DS00
2SK3304
RDS(on) - Drain to Source On-state Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 5.0 4.0 3.0 2.0 1.0 0.0 -50 VGS = 10 V ID = 4.0 A 0 50 100 150 100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed
ISD - Diode Forward Current - A
10
1 VGS = 10 V VGS = 0 V 0.1 0.0
0.5
1.0
1.5
Tch - Channel Temperature - C
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000
SWITCHING CHARACTERISTICS 1000
Ciss, Coss, Crss - Capacitance - pF
1000
Ciss
td(on), tr, td(off), tf - Switching Time - ns
VGS = 0 V f = 1 MHz
100
tf td(off)
100 Coss 10 Crss 1 1 10 100 1000 VDS - Drain to Source Voltage - V
td(on) 10
tr 1 0.1 1 10
VDD = 150 V VGS = 10 V RG = 10
100
ID - Drain Current - A
REVERSE RECOVERY TIME vs. DRAIN CURRENT 10000
VDS - Drain to Source Voltage - V
600 VDD = 450 V 300 V 150 V 400 VGS
12 10 8 6
1000
100
200 VDS 0 10 20 30 40 50
4 2 0 60
10 0.1
1
di/dt = 50 A / s VGS = 0 V 10 100
IF - Drain Current - A
QG - Gate Charge - nC
VGS - Gate to Source Voltage - V
trr - Reverse Recovery Time - ns
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 800 ID = 7.0 A 14
Data Sheet D13992EJ1V0DS00
5
2SK3304
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 150
SINGLE AVALANCHE ENERGY vs STARTING CHANNEL TEMPERATURE
EAS - Single Avalanche Energy - mJ
IAS - Single Avalanche Current - A
EAS = 147 mJ
125 100 75 50 25 0 25
VDD = 150 V RG = 25 VGS = 20 V 0 V ID(peak) = IAS
10
IAS = 7.0 A
EAS
=1
47 m
J
1 VDD = 150 V VGS = 20 V 0 V RG = 25 Starting Tch = 25C 0.001 0.01 0.1
0.1 0.0001
50
75
100
125
150
175
L - Inductive Load - H
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D13992EJ1V0DS00
2SK3304
PACKAGE DRAWING (Unit : mm)
TO-3P (MP-88) EQUIVALENT CIRCUIT
Drain
4.7 MAX.
1.0 TYP. 4.50.2
3.20.2 15.7 MAX.
1.5 TYP.
4
20.5 MAX. 5.0 TYP.
1
2
3
18.70.4
7.0 TYP.
Gate
Body Diode
Source
19 MIN.
3.4 MAX.
2.20.2
1.00.2
0.60.1
2.80.1
5.45 TYP.
5.45 TYP.
1: Gate 2: Drain 3: Source 4: Fin (Drain)
Remark Strong electric field, when exposed to this device, cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
Data Sheet D13992EJ1V0DS00
7
2SK3304
* The information in this document is current as of June, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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