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| TC1426 TC1427 TC1428 1.2A DUAL HIGH-SPEED MOSFET DRIVERS FEATURES s Low Cost s Latch-Up Protected: Will Withstand 500 mA Reverse Output Current s ESD Protected ................................................... 2 kV s High Peak Output Current ........................ 1.2A Peak s High Capacitive Load Drive Capability ...................................... 1000pF in 38nsec s Wide Operating Range ........................... 4.5V to 16V s Low Delay Time ...................................... 75nsec Max s Logic Input Threshold Independent of Supply Voltage s Output Voltage Swing to Within 25mV of Ground or VDD s Low Output Impedance ........................................ 8 1 GENERAL DESCRIPTION The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic transistor responsible for CMOS latch-up. They incorporate a number of other design and process refinements to increase their long-term reliability. The TC1426 is compatible with the bipolar DS0026, but only draws 1/5 of the quiescent current. The TC1426/27/28 are also compatible with the TC426/27/28, but with 1.2A peak output current rather than the 1.5A of the TC426/27/28 devices. Other compatible drivers are the TC4426/27/28 and the TC4426A/27A/28A. The TC4426/27/28 have the added feature that the inputs can withstand negative voltage up to 5V with diode protection circuits. The TC4426A/27A/28A have matched input to output leading edge and falling edge delays, tD1 and tD2, for processing short duration pulses in the 25 nanoseconds range. All of the above drivers are pin compatible. The high-input impedance TC1426/27/28 drivers are CMOS/TTL input-compatible, do not require the speed-up needed by the bipolar devices, and can be directly driven by most PWM ICs. This family of devices is available in inverting and noninverting versions. Specifications have been optimized to achieve low-cost and high-performance devices, well-suited for the high-volume manufacturer. 2 3 4 5 6 Temp. Range 0C to +70C 0C to +70C 0C to +70C 0C to +70C 0C to +70C 0C to +70C APPLICATIONS s s s s s Power MOSFET Drivers Switched Mode Power Supplies Pulse Transformer Drive Small Motor Controls Print Head Drive PIN CONFIGURATIONS NC 1 IN A 2 GND 3 IN B 4 2, 4 7, 5 TC1426CPA 8 NC NC 1 TC1427CPA 8 NC NC 1 TC1428CPA 8 NC 7 OUT A 6 VDD 5 OUT B 2 7 7 OUT A IN A 2 6 VDD GND 3 7 OUT A IN A 2 6 VDD GND 3 5 OUT B IN B 4 2, 4 7, 5 5 OUT B IN B 4 INVERTING NC = NO CONNECTION NON-INVERTING 4 5 NC 1 IN A 2 GND 3 IN B 4 2, 4 7, 5 TC1426COA 8 NC NC 1 TC1427COA 8 NC NC 1 TC1428COA 8 NC 7 OUT A 6 VDD 5 OUT B 2 7 ORDERING INFORMATION Part No. TC1426COA TC1426CPA TC1427COA 7 OUT A IN A 2 6 VDD GND 3 7 OUT A IN A 2 6 VDD GND 3 5 OUT B IN B 4 2, 4 7, 5 5 OUT B IN B 4 Package 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP INVERTING NC = NO CONNECTION NON-INVERTING 4 5 FUNCTIONAL BLOCK DIAGRAM V+ 500A 2.5mA TC1427CPA TC1428COA TC1428CPA 7 TC1426 INVERTING TC1427 NONINVERTING TC1428 INVERTING/NONINVERTING NONINVERTING OUTPUT (TC1427) INVERTING OUTPUT (TC1426) INPUT NOTE: TC1428 has one inverting and one noninverting driver. Ground any unused driver input. TC1426/7/8-8 10/11/96 GND 8 4-207 TELCOM SEMICONDUCTOR, INC. 1.2A DUAL HIGH-SPEED MOSFET DRIVERS TC1426 TC1427 TC1428 ABSOLUTE MAXIMUM RATINGS* Power Dissipation (TA 70C) Plastic DIP ...........................................................730W SOIC ................................................................ 470 mW Derating Factor Plastic DIP ..................................................... 8 mW/C SOIC .............................................................. 4 mW/C Supply Voltage ............................................................18V Input Voltage, Any Terminal .. (VDD + 0.3V) to (GND - 0.3V) Operating Temperature : C Version .............. 0C to +70C E Version ......... - 40C to +85C Maximum Chip Temperature ................................. +150C Storage Temperature ............................. +65C to +150C Lead Temperature (Soldering ,10 sec) ................. +300C *Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS: TA = 25C with 4.5V VDD+ 16V unless otherwise specified. Symbol Input VIH VIL IIN Output VOH VOL RO Input Current High Output Voltage Low Output Voltage Output Resistance Parameter Test Conditions Logic 1, Input Voltage Logic 0, Input Voltage 0V VIN VDD Test Figures 1 and 2 Test Figures 1 and 2 VIN = 0.8V, IOUT = 10 mA, VDD = 16V VIN = 3V, IOUT = 10 mA, VDD = 16V Withstand Reverse Current Min 3 -- -1 VDD - 0.025 -- -- -- -- > 500 Typ -- -- -- -- -- 12 8 1.2 -- Max -- 0.8 1 -- 0.025 18 12 -- -- A mA Unit V V A V V IPK I Peak Output Current Latch-Up Current Switching Time (Note 1) tR tF tD1 tD2 IS Rise Time Fall Time Delay Time Delay Time Test Figures 1 and 2 Test Figures 1 and 2 Test Figures 1 and 2 Test Figures 1 and 2 -- -- -- -- -- -- -- -- 35 25 75 75 nsec nsec nsec nsec Power Supply Power Supply Current VIN = 3V (Both Inputs) VIN = 0V (Both Inputs) -- -- -- -- 9 0.5 mA Note: 1. Switching times guaranteed by design. 4-208 TELCOM SEMICONDUCTOR, INC. 1.2A DUAL HIGH-SPEED MOSFET DRIVERS TC1426 TC1427 TC1428 ELECTRICAL CHARACTERISTICS: Over operating temperature range with 4.5V VDD + 16V unless otherwise specified. Symbol Input VIH VIL IIN Output VOH VOL RO High Output Voltage Low Output Voltage Output Resistance Test Figures 1 and 2 Test Figures 1 and 2 VIN = 0.8V, IOUT = 10mA, VDD = 16V VIN = 3V, IOUT = 10mA, VDD = 16V Withstand Reverse Current VDD - 0.025 -- -- -- > 500 -- -- 15 10 -- -- 0.025 23 18 -- mA V V Logic 1, Input Voltage Logic 0, Input Voltage Input Current 0V VIN VDD 3 -- - 10 -- -- -- -- 0.8 10 V V A Parameter Test Conditions Min Typ Max Unit 1 2 3 4 5 6 7 I Latch-Up Current Switching Time (Note 1) tR tF tD1 tD2 IS Rise Time Fall Time Delay Time Delay Time Test Figures 1 and 2 Test Figures 1 and 2 Test Figures 1 and 2 Test Figures 1 and 2 -- -- -- -- -- -- -- -- 60 40 125 125 nsec nsec nsec nsec Power Supply Power Supply Current VIN = 3V (Both Inputs) VIN = 0V (Both Inputs) Note: 1. Switching times guaranteed by design. -- -- -- -- 13 0.7 mA SUPPLY BYPASSING Large currents are required to charge and discharge capacitive loads quickly. For example, charging a 1000-pF load to 16V in 25nsec requires an 0.8A current from the device power supply. To guarantee low supply impedance over a wide frequency range, a parallel capacitor combination is recommended for supply bypassing. Low-inductance ceramic MLC capacitors with short lead lengths (< 0.5-in.) should be used. A 1.0-F film capacitor in parallel with one or two 0.1-F ceramic MLC capacitors normally provides adequate bypassing. INPUT STAGE The input voltage level changes the no-load or quiescent supply current. The N-channel MOSFET input stage transistor drives a 2.5 mA current source load. With a logic "1" input, the maximum quiescent supply current is 9mA. Logic "0" input level signals reduce quiescent current to 500 A maximum. Unused driver inputs must be connected to VDD or GND. Minimum power dissipation occurs for logic "0" inputs for the TC1426/27/28. The drivers are designed with 100 mV of hysteresis. This provides clean transitions and minimizes output stage current spiking when changing states. Input voltage thresholds are approximately 1.5V, making logic "1" input any voltage greater than 1.5V up to VDD. Input current is less than 1A over this range. The TC1426/27/28 may be directly driven by the TL494, SG1526/27, TC38C42, TC170 and similar switch-mode power supply integrated circuits. 4-209 GROUNDING The TC1426 and TC1428 contain inverting drivers. Individual ground returns for the input and output circuits or a ground plane should be used. This will reduce negative feedback that causes degradation in switching speed characteristics. TELCOM SEMICONDUCTOR, INC. 8 1.2A DUAL HIGH-SPEED MOSFET DRIVERS TC1426 TC1427 TC1428 Test Circuit VDD = 16V 1F WIMA MKS-2 Test Circuit 0.1F MLC VDD = 16V 1 F WIMA MKS-2 0.1F MLC INPUT 1 OUTPUT C L = 1000pF INPUT 1 OUTPUT CL = 1000pF 2 2 TC1426 (1/2 TC1428) TC1427 (1/2 TC1428) +5V INPUT 90% +5V INPUT 90% 0V VDD 10% tD1 90% tF tD2 0V tR 10% 90% tR 10% tD2 90% tF 10% VDD 90% tD1 OUTPUT OUTPUT 0V 10% 10% 0V Figure 1. Inverting Driver Switching Time Figure 2. Non-Inverting Driver Switching Time 4-210 TELCOM SEMICONDUCTOR, INC. 1.2A DUAL HIGH-SPEED MOSFET DRIVERS TC1426 TC1427 TC1428 TYPICAL CHARACTERISTICS Rise Time vs. Supply Voltage 550 440 TIME (ns) TA = +25C 1 Fall Time vs. Supply Voltage 330 TA = +25C Delay Time vs. Supply Voltage 80 C = 1000pF L TA = +25C 2 3 264 10,000pF TIME (nsec) 70 TIME (nsec) 330 198 10,000pF 60 220 4700pF 110 2200pF 132 4700pF 66 2200pF 50 t D1 40 t D2 30 0 5 7 9 11 VDD (V) 13 15 0 5 7 9 11 VDD (V) 13 15 5 7 9 11 VDD (V) 13 15 4 500kHz Rise and Fall Times vs. Temperature 40 Delay Time vs. Temperature 60 C = 1000pF L VDD = +15V 54 TIME (nsec) Supply Current vs. Capacitive Load 30 C = 1000pF L VDD = 15V TA = +25C C = 1000pF L VDD = +15V 32 TIME (nsec) tRISE 24 24 tFALL 48 t D2 SUPPLY CURRENT (mA) 18 200kHz 12 20kHz 6 0 5 6 7 16 42 t D1 8 36 0 25 45 65 85 105 TEMPERATURE (C) 125 0 25 45 65 85 105 TEMPERATURE (C) 125 100 520 940 1360 1780 CAPACITIVE LOAD (pF) 2200 Rise Time vs. Capacitive Load 1000 TA = +25C Fall Time vs. Capacitive Load 1000 TA = +25C Supply Current vs. Frequency 100 CL = 1000pF SUPPLY CURRENT (mA) VDD = 15V VDD = 10V 80 TA = +25C TIME (nsec) TIME (nsec) 5V DD 100 10 V DD 100 10VDD 5VDD 60 40 15 V DD 10 100 15VDD 10 100 20 VDD = 5V 0 10 100 1000 FREQUENCY (kHz) 10,000 1000 10,000 CAPACITIVE LOAD (pF) 10,000 1000 CAPACITIVE LOAD (pF) 8 TELCOM SEMICONDUCTOR, INC. 4-211 1.2A DUAL HIGH-SPEED MOSFET DRIVERS TC1426 TC1427 TC1428 TYPICAL CHARACTERISTIC (Cont.) Low-State Output Resistance 15 100mA 13 50mA TA = +25C 50 42 100mA High-State Output Resistance TA = +25C Crossover Energy Loss 10 -8 TA = +25C ROUT ( ) R OUT () A (sec) 9 11 VDD (V) 13 15 11 34 10 -9 9 10mA 7 26 50mA 18 10mA 5 10 5 7 9 11 VDD (V) 13 15 5 7 10 -10 4 6 8 10 12 VDD (V) 14 16 18 Quiescent Power Supply Current vs. Supply Voltage 20 BOTH INPUTS LOGIC "0" SUPPLY VOLTAGE (V) Quiescent Power Supply Current vs. Supply Voltage 20 SUPPLY VOLTAGE (V) BOTH INPUTS LOGIC "1" 15 15 10 10 5 5 0 0 50 100 150 200 300 SUPPLY CURRENT (A) 400 0 1 2 3 4 5 SUPPLY CURRENT (mA) 6 Thermal Derating Curves 1600 1400 8 Pin DIP 8 Pin CerDIP 1000 800 8 Pin SOIC 600 400 200 0 0 10 20 30 40 50 60 70 80 90 100 110 120 MAX. POWER (mV) 1200 AMBIENT TEMPERATURE (C) 4-212 TELCOM SEMICONDUCTOR, INC. |
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