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| Hyper Mini TOPLED(R) RG Hyper-Bright LED LS M776, LA M776, LO M776 LY M776 Besondere Merkmale q q q q q Gehausefarbe: wei als optischer Indikator einsetzbar zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung fur alle SMT-Bestuck- und Lottechniken geeignet gegurtet (8-mm-Filmgurt) VPL06926 Features q q q q q color of package: white for use as optical indicator for backlighting, optical coupling into light pipes and lenses suitable for all SMT assembly and soldering methods available taped on reel (8 mm tape) Semiconductor Group 1 11.96 LS M776, LA M776, LO M776 LY M776 Typ Type Emissionsfarbe Color of Emission Farbe der Lichtaustrittsflache Color of the Light Emitting Area colorless clear Lichtstarke Luminous Intensity IF = 20 mA IV (mcd) 16 ... 125 25 ... 50 40 ... 80 63 ... 125 25 ... 200 25 ... 200 40 ... 80 63 ... 125 100 ... 200 40 ... 320 25 ... 200 40 ... 80 63 ... 125 100 ... 200 40 ... 320 25 ... 200 40 ... 80 63 ... 125 100 ... 200 40 ... 320 Lichtstrom Luminous Flux IF = 20 mA V (mlm) 100 (typ.) 180 (typ.) 300 (typ.) 180 (typ.) 300 (typ.) 450 (typ.) 180 (typ.) 300 (typ.) 450 (typ.) 180 (typ.) 300 (typ.) 450 (typ.) - Bestellnummer Ordering Code LS M776-MQ super-red LS M776-N LS M776-P LS M776-Q LS M776-NR LA M776-NR LA M776-P LA M776-Q LA M776-R LA M776-PS LO M776-NR LO M776-P LO M776-Q LO M776-R LO M776-PS LY M776-NR LY M776-P LY M776-Q LY M776-R LY M776-PS amber Q62703-Q3859 Q62703-Q3860 Q62703-Q3861 Q62703-Q3862 Q62703-Q3863 Q62703-Q3864 Q62703-Q3865 Q62703-Q3866 Q62703-Q3867 Q62703-Q3868 Q62703-Q3869 Q62703-Q3870 Q62703-Q3871 Q62703-Q3872 Q62703-Q3873 Q62703-Q3874 Q62703-Q3875 Q62703-Q3876 Q62703-Q3877 Q62703-Q3878 colorless clear orange colorless clear yellow colorless clear Streuung der Lichtstarke in einer Verpackungseinheit IV max / IV min 2.0. Luminous intensity ratio in one packaging unit IV max / IV min 2.0. Semiconductor Group 2 LS M776, LA M776, LO M776 LY M776 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlastrom Forward current Stostrom Surge current t 10 s, D = 0.005 Sperrspannung1) Reverse voltage1) Verlustleistung Power dissipation Symbol Symbol Werte Values LS, LO, LA LY - 55 ... + 100 - 55 ... + 100 + 100 30 20 to be defined Einheit Unit C C C mA A Top Tstg Tj IF IFM VR Ptot 802) 6302) 3 552) 500 V mW K/W Warmewiderstand Rth JA Thermal resistance Sperrschicht / Umgebung Junction / air Montage auf PC-board*) (Padgroe 16 mm2) mounted on PC board*) (pad size 16 mm2) 1) 1) 2) Belastung in Sperrichtung sollte vermieden werden. Reverse biasing should be avoided. vorlaufig/preliminary *) PC-board: FR4 Semiconductor Group 3 LS M776, LA M776, LO M776 LY M776 Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlange des emittierten Lichtes Wavelength at peak emission IF = 20 mA Dominantwellenlange Dominant wavelength IF = 20 mA Spektrale Bandbreite bei 50% Irel max Spectral bandwidth at 50% Irel max IF = 20 mA Abstrahlwinkel bei 50% Iv (Vollwinkel) Viewing angle at 50% Iv Durchlaspannung Forward voltage IF = 20 mA Sperrstrom Reverse current VR = 3 V Symbol Symbol LS (typ.) peak (typ.) (typ.) dom (typ.) (typ.) (typ.) 2 (typ.) VF (max.) VF (typ.) IR (max.) IR TC TC (typ.) (typ.) - 1.95 - 1.78 - 1.67 - 2.51 mV/K 645 LA 622 Werte Values LO 610 LY 591 nm Einheit Unit 632 615 605 587 nm 16 16 16 15 nm 120 2.0 2.6 0.01 10 120 2.0 2.6 0.01 10 120 2.0 2.6 0.01 10 120 2.0 2.6 0.01 10 Grad deg. V V A A Temperaturkoeffizient von dom (IF = 20 mA) Temperature coefficient of dom (IF = 20 mA) Temperaturkoeffizient von peak, IF = 20 mA Temperature coefficient of peak, IF = 20 mA 0.014 0.062 0.067 0.096 nm/K 0.14 0.13 0.13 0.13 nm/K Temperaturkoeffizient von VF, IF = 20 mA (typ.) TCV Temperature coefficient of VF, IF = 20 mA (typ.) Semiconductor Group 4 LS M776, LA M776, LO M776 LY M776 Relative spektrale Emission Irel = f (), TA = 25 C, IF = 10 mA Relative spectral emission V() = spektrale Augenempfindlichkeit Standard eye response curve Abstrahlcharakteristik Irel = f () Radiation characteristic Semiconductor Group 5 LS M776, LA M776, LO M776 LY M776 Durchlastrom IF = f (VF) Forward current TA = 25 C Relative Lichtstarke IV / IV(20 mA) = f (IF) Relative luminous intensity TA = 25 C Maximal zulassiger Durchlastrom Max. permissible forward current IF = f (TA) Relative Lichtstarke IV / IV(25 C) = f (TA) Relative luminous intensity IF = 10 mA Semiconductor Group 6 LS M776, LA M776, LO M776 LY M776 Zulassige Impulsbelastbarkeit IF = f (tp) Permissible pulse handling capability LS, LA, LO Duty cycle D = parameter, TA = 25 C Zulassige Impulsbelastbarkeit IF = f (tp) Permissible pulse handling capability LY Duty cycle D = parameter, TA = 25 C Mazeichnung Package Outlines (Mae in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified) Kathodenkennung: Cathode mark: Semiconductor Group abgeschragte Ecke bevelled edge 7 GPL06926 |
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