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Philips Semiconductors
Product specification
N-channel TrenchMOSTM transistor
PHP3055E, PHD3055E
FEATURES
* 'Trench' technology * Low on-state resistance * Fast switching
SYMBOL
d
QUICK REFERENCE DATA VDSS = 55 V ID = 10.3 A
g
RDS(ON) 150 m (VGS = 10 V)
s
GENERAL DESCRIPTION
N-channel enhancement mode, field-effect power transistor in a plastic envelope using 'trench' technology. Applications:* d.c. to d.c. converters * switched mode power supplies The PHP3055E is supplied in the SOT78 (TO220AB) conventional leaded package. The PHD3055E is supplied in the SOT428 (DPAK) surface mounting package.
PINNING
PIN 1 2 3 tab gate drain1 source DESCRIPTION
SOT78 (TO220AB)
tab
SOT428 (DPAK)
tab
2
drain
1 23
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 C to 175C Tj = 25 C to 175C; RGS = 20 k Tmb = 25 C Tmb = 100 C Tmb = 25 C Tmb = 25 C MIN. - 55 MAX. 55 55 20 10.3 7.3 41 33 175 UNIT V V V A A A W C
1 It is not possible to make connection to pin:2 of the SOT428 package August 1999 1 Rev 1.200
Philips Semiconductors
Product specification
N-channel TrenchMOSTM transistor
PHP3055E PHD3055E
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS Non-repetitive avalanche energy Peak non-repetitive avalanche current CONDITIONS Unclamped inductive load, IAS = 3.3 A; tp = 220 s; Tj prior to avalanche = 25C; VDD 25 V; RGS = 50 ; VGS = 10 V; refer to fig:15 MIN. MAX. 25 UNIT mJ
IAS
-
10.3
A
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS TYP. SOT78 package, in free air SOT428 package, pcb mounted, minimum footprint 60 50 MAX. 4.5 UNIT K/W K/W K/W
ELECTRICAL CHARACTERISTICS
Tj= 25C unless otherwise specified SYMBOL PARAMETER V(BR)DSS VGS(TO) RDS(ON) gfs IGSS IDSS Qg(tot) Qgs Qgd td on tr td off tf Ld Ld Ls Ciss Coss Crss Drain-source breakdown voltage Gate threshold voltage Drain-source on-state resistance Forward transconductance Gate source leakage current Zero gate voltage drain current Total gate charge Gate-source charge Gate-drain (Miller) charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance Input capacitance Output capacitance Feedback capacitance CONDITIONS VGS = 0 V; ID = 0.25 mA; Tj = -55C VDS = VGS; ID = 1 mA Tj = 175C Tj = -55C VGS = 10 V; ID = 5.5 A Tj = 175C VDS = 25 V; ID = 5.5 A VGS = 10 V; VDS = 0 V VDS = 55 V; VGS = 0 V; Tj = 175C ID = 10 A; VDD = 44 V; VGS = 10 V MIN. 55 50 2.0 1.0 1.5 TYP. MAX. UNIT 3.0 120 250 3.2 10 0.05 5.8 1.5 3.2 3 26 8 10 3.5 4.5 7.5 190 55 40 4.0 6 150 315 100 10 500 10 35 15 20 250 80 50 V V V V V m m S nA A A nC nC nC ns ns ns ns nH nH nH pF pF pF
VDD = 30 V; RD = 2.7 ; RG = 5.6 ; VGS = 10 V Resistive load Measured from tab to centre of die Measured from drain lead to centre of die (SOT78 package only) Measured from source lead to source bond pad VGS = 0 V; VDS = 25 V; f = 1 MHz
August 1999
2
Rev 1.200
Philips Semiconductors
Product specification
N-channel TrenchMOSTM transistor
PHP3055E PHD3055E
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25C unless otherwise specified SYMBOL PARAMETER IS ISM VSD trr Qrr Continuous source current (body diode) Pulsed source current (body diode) Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS MIN. IF = 10 A; VGS = 0 V IF = 10 A; -dIF/dt = 100 A/s; VGS = 0 V; VR = 30 V TYP. MAX. UNIT 1.1 32 50 10.3 41 1.5 A A V ns nC
August 1999
3
Rev 1.200
Philips Semiconductors
Product specification
N-channel TrenchMOSTM transistor
PHP3055E PHD3055E
Normalised Power Derating, PD (%) 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 Mounting Base temperature, Tmb (C) 150 175
10
Transient thermal impedance, Zth j-mb (K/W)
D = 0.5 0.2 1 0.1 0.05 0.02 single pulse 0.1 1E-06 1E-05 1E-04 1E-03 1E-02 T 1E-01 1E+00 P D tp D = tp/T
Pulse width, tp (s)
Fig.1. Normalised power dissipation. PD% = 100PD/PD 25 C = f(Tmb)
Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T
Drain Current, ID (A) Tj = 25 C VGS = 10V 8V 7V 6.5 V 6V 5.5 V 5V 4.5 V 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Drain-Source Voltage, VDS (V) 1.6 1.8 2
Normalised Current Derating, ID (%) 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 Mounting Base temperature, Tmb (C) 150 175
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
Fig.2. Normalised continuous drain current. ID% = 100ID/ID 25 C = f(Tmb); conditions: VGS 10 V
Peak Pulsed Drain Current, IDM (A)
Fig.5. Typical output characteristics, Tj = 25 C. ID = f(VDS)
100
0.5 RDS(on) = VDS/ ID tp = 10 us 10 100 us D.C. 1 100 ms 1 ms 10 ms 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.1 1 10 Drain-Source Voltage, VDS (V) 100 0
Drain-Source On Resistance, RDS(on) (Ohms) 5V 5.5V 6V Tj = 25 C
6.5 V 7V 8V VGS = 10V
0
1
2
3 4 5 6 Drain Current, ID (A)
7
8
9
10
Fig.3. Safe operating area. Tmb = 25 C ID & IDM = f(VDS); IDM single pulse; parameter tp
Fig.6. Typical on-state resistance, Tj = 25 C. RDS(ON) = f(ID)
August 1999
4
Rev 1.200
Philips Semiconductors
Product specification
N-channel TrenchMOSTM transistor
PHP3055E PHD3055E
Drain current, ID (A) 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 Gate-source voltage, VGS (V) Tj = 25 C VDS > ID X RDS(ON)
4.5 4 3.5 3 2.5 2 1.5
175 C
Threshold Voltage, VGS(TO) (V) maximum typical
minimum
1 0.5 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Junction Temperature, Tj (C)
Fig.7. Typical transfer characteristics. ID = f(VGS)
Transconductance, gfs (S) VDS > ID X RDS(ON) 3.5 3 2.5 2 1.5 1 0.5 0 0 1 2 3 4 5 6 Drain current, ID (A) 7 8 9 10 175 C Tj = 25 C
Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
Drain current, ID (A)
4
1.0E-01
1.0E-02 minimum typical 1.0E-04 maximum 1.0E-05
1.0E-03
1.0E-06 0 0.5 1 1.5 2 2.5 3 3.5 Gate-source voltage, VGS (V) 4 4.5 5
Fig.8. Typical transconductance, Tj = 25 C. gfs = f(ID)
Normalised On-state Resistance 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Junction temperature, Tj (C)
Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 C; VDS = VGS
1000
Capacitances, Ciss, Coss, Crss (pF)
Ciss
100 Coss
Crss 10 0.1 1 10 Drain-Source Voltage, VDS (V) 100
Fig.9. Normalised drain-source on-state resistance. RDS(ON)/RDS(ON)25 C = f(Tj)
Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
August 1999
5
Rev 1.200
Philips Semiconductors
Product specification
N-channel TrenchMOSTM transistor
PHP3055E PHD3055E
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
Gate-source voltage, VGS (V) ID = 10A Tj = 25 C VDD = 11 V 10 100
Maximum Avalanche Current, IAS (A)
VDD = 44 V
25 C
1 Tj prior to avalanche = 150 C
0
1
2
3 4 5 Gate charge, QG (nC)
6
7
8
0.1 0.001
0.01
0.1 Avalanche time, tAV (ms)
1
10
Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG)
Fig.15. Maximum permissible non-repetitive avalanche current (IAS) versus avalanche time (tAV); unclamped inductive load
Source-Drain Diode Current, IF (A) 10 9 8 7 6 5 4 3 2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 Source-Drain Voltage, VSDS (V) Tj = 25 C 175 C VGS = 0 V
Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
August 1999
6
Rev 1.200
Philips Semiconductors
Product specification
N-channel TrenchMOSTM transistor
PHP3055E PHD3055E
MECHANICAL DATA
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220 SOT78
E P
A A1 q
D1
D
L2(1)
L1 Q
L
b1
1
2
3
b c
e
e
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.5 4.1 A1 1.39 1.27 b 0.9 0.7 b1 1.3 1.0 c 0.7 0.4 D 15.8 15.2 D1 6.4 5.9 E 10.3 9.7 e 2.54 L 15.0 13.5 L1 3.30 2.79 L2 max. 3.0
(1)
P 3.8 3.6
q 3.0 2.7
Q 2.6 2.2
Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC TO-220 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-11
Fig.16. SOT78 (TO220AB); pin 2 connected to mounting base (Net mass:2g)
Notes 1. This product is supplied in anti-static packaging. The gate-source input must be protected against static discharge during transport or handling. 2. Refer to mounting instructions for SOT78 (TO220AB) package. 3. Epoxy meets UL94 V0 at 1/8".
August 1999
7
Rev 1.200
Philips Semiconductors
Product specification
N-channel TrenchMOSTM transistor
PHP3055E PHD3055E
MECHANICAL DATA
Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads (one lead cropped) SOT428
seating plane y A E b2 A A1 mounting base A2 D1
E1 D HE L2
2
L L1
1
b1 e e1 b
3
wM A c
0
10 scale
20 mm
DIMENSIONS (mm are the original dimensions) A UNIT max. mm 2.38 2.22 A1(1) 0.65 0.45 A2 0.89 0.71 b 0.89 0.71 b1 max. 1.1 0.9 b2 5.36 5.26 c 0.4 0.2 D1 E D max. max. max. 6.22 5.98 4.81 4.45 6.73 6.47 E1 min. 4.0 e e1 HE max. 10.4 9.6 L 2.95 2.55 L1 min. 0.5 L2 0.7 0.5 w 0.2 y max. 0.2
2.285 4.57
Note 1. Measured from heatsink back to lead. OUTLINE VERSION SOT428 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 98-04-07
Fig.17. SOT428 surface mounting package. Centre pin connected to mounting base.
Notes 1. This product is supplied in anti-static packaging. The gate-source input must be protected against static discharge during transport or handling. 2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18. 3. Epoxy meets UL94 V0 at 1/8".
August 1999
8
Rev 1.200
Philips Semiconductors
Product specification
N-channel TrenchMOSTM transistor
PHP3055E PHD3055E
MOUNTING INSTRUCTIONS
Dimensions in mm
7.0
7.0
2.15 2.5
1.5
4.57
Fig.18. SOT428 : soldering pattern for surface mounting.
August 1999
9
Rev 1.200
Philips Semiconductors
Product specification
N-channel TrenchMOSTM transistor
PHP3055E PHD3055E
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
August 1999
10
Rev 1.200

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