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  Datasheet File OCR Text:
 Diodes
DA227/DAN202K/DAN202U/DAN222 DAP202K/DAP202U/DAP222
Switching diode
DA227 DAN202K / DAN202U / DAN222 DAP202K / DAP202U / DAP222
Application Ultra high speed switching External dimensions (Units : mm)
DAN202K / DAP202K DAN202U / DAP202U
0.4
0.30.1
0.150.05
(All pins have the same dimensions)
(All pins have the same dimensions)
Construction Silicon epitaxial planar
ROHM : SMD3 EIAJ : SC - 59 JEDEC : SOT - 346
DA227
ROHM : UMD3 EIAJ : SC - 70 JEDEC : SOT - 323
DAN222 / DAP222
Marking
DAN222 DAN202U DAN202K DAP222 DAP202U DAP202K DA227 N
1.250.1 0.6 0.30.1 0.65 0.20.1 0.90.1 0.7
1.250.1
1.60.2 1.00.1 +0.1 0.2 -0.05 0~0.1 0.5 0.5 +0.1 0.2 -0.05
0.80.1 1.60.2
0.70.1 0.550.1
P
0.20.1 0.20.1
2.10.1
0~0.1
0.1Min.
0.65 0.65 1.30.1 2.00.2 0.150.05
0.3 +0.1 -0.05
0.150.05
ROHM : UMD4 EIAJ : SC - 82 JEDEC : SOT - 343
ROHM : EMD3 EIAJ : SC - 75 JEDEC : SOT - 416
0.1Min.
N20
0.1Min.
+0.1 -0.05
0.15
0.3~0.6
Features 1) Four types of packaging are available. 2) High speed. (trr=1.5ns Typ.) 3) Suitable for high packing density layout. 4) High reliability.
2.90.2 1.90.2 0.95 0.95
1.1
+0.2 -0.1
2.00.2 1.30.1 0.65 0.65 0.3 0.90.1 0.6
0.80.1
2.80.2
+0.2 -0.1
1.250.1
2.10.1
0~0.1
1.6
0~0.1
+0.1 -0.06
Diodes
Circuits
DA227/DAN202K/DAN202U/DAN222 DAP202K/DAP202U/DAP222
DAN202K DAN202U DAN222
DAP202K DAP202U DAP222
DA227
Absolute maximum ratings (Ta=25C)
Type DAN202K DAP202K DAN202U DAP202U DAN222 DAP222 DA227
Junction Storage Peak reverse DC reverse Peak forward Mean rectifying Surge current Power dissipation temperature temperature voltage voltage current current (1s) (TOTAL) Tj (C) Tstg (C) VRM (V) VR (V) IFM (mA) IO (mA) Isurge (A) Pd(mW)
80 80 80 80 80 80 80 80 80 80 80 80 80 80 300 300 300 300 300 300 300 100 100 100 100 100 100 100 4 4 4 4 4 4 4 200 200 200 200 150 150 150 150 150 150 150 150 150 150
P/N Type N P N P N P N
-55~+150 -55~+150 -55~+150 -55~+150 -55~+150 -55~+150 -55~+150
Electrical characteristics (Ta=25C)
Forward voltage Type VF (V) Max. 1.2 1.2 1.2 1.2 1.2 1.2 1.2 Cond. IF (mA) 100 100 100 100 100 100 100 Reverse current IR (A) Max. 0.1 0.1 0.1 0.1 0.1 0.1 0.1 Cond. VR (V) 70 70 70 70 70 70 70 Capacitance between terminals CT (pF) Max. 3.5 3.5 3.5 3.5 3.5 3.5 3.5 Cond. VR (V) f (MHz) 6 6 6 6 6 6 6 1 1 1 1 1 1 1 Reverse recovery time trr (ns) Max. 4 4 4 4 4 4 4 Cond. VR (V) 6 6 6 6 6 6 6 IF (mA) 5 5 5 5 5 5 5
DAN202K DAP202K DAN202U DAP202U DAN222 DAP222 DA227
Diodes
Electrical characteristic curves (Ta=25C)
POWER DISSIPATION : Pd / Pd Max.(%)
DA227/DAN202K/DAN202U/DAN222 DAP202K/DAP202U/DAP222
50
125
1000
Ta=100C
FORWARD CURRENT : IF (mA)
100
REVERSE CURRENT : IR (nA)
20 10 5 2 1 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Ta=85C 50C 25C 0C -30C
100
75C
75
10
50C 25C
50
1
0C -25C
25
0.1
0 0
25
50
75
100
125
150
0.01 0
10
20
30
40
50
AMBIENT TEMPERATURE :Ta (C)
FORWARD VOLTAGE : VF (V)
REVERSE VOLTAGE : VR (V)
Fig.1 Power attenuation curve
Fig.2 Forward characteristics (P Type)
Fig.3 Reverse characteristics (P Type)
1000
FORWARD CURRENT : IF (mA) REVERSE CURRENT : IR (nA)
20 10 5 2 1 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Ta=85C 50C 25C 0C -30C
Ta=100C 75C 50C
CAPACITANCE BETWEEN TERMINALS : CT (pF)
50
f=1MHz 4
100
10
25C 0C -25C
1
2
P Type
0.1
N Type
0.01 0
10
20
30
40
50
60
70
80
0 0
2
4
6
8
10 12 14 16 18 20
FORWARD VOLTAGE : VF
(V)
REVERSE VOLTAGE : VR (V)
REVERSE VOLTAGE : VR (V)
Fig.4 Forward characteristics (N Type)
Fig.5 Reverse characteristics (N Type)
Fig.6 Capacitance between terminals characteristics
10
(ns)
0.01F
VR=6V
D.U.T.
9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7
REVERSE RECOVERY TIME : trr
5 PULSE GENERATOR OUTPUT 50 50 SAMPLING OSCILLOSCOPE
P Typ
e
INPUT
N Type
8
9
10
100ns
FORWARD CURRENT : IF
(mA)
Fig.7 Reverse recovery time
OUTPUT
trr 0
Fig.8 Reverse recovery time (trr) measurement circuit
0.1IR
IR
This datasheet has been download from: www..com Datasheets for electronics components.


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