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| ADVANCED LINEAR DEVICES, INC. ALD1107/ALD1117 QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY GENERAL DESCRIPTION The ALD1107/ALD1117 are monolithic quad/dual P-channel enhancement mode matched MOSFET transistor arrays intended for a broad range of precision analog applications. The ALD1107/ALD1117 offer high input impedance and negative current temperature coefficient. The transistor pairs are matched for minimum offset voltage and differential thermal response, and they are designed for precision analog switching and amplifying applications in +2V to +12V systems where low input bias current, low input capacitance and fast switching speed are desired. These MOSFET devices feature very large (almost infinite) current gain in a low frequency, or near DC operating environment. The ALD1107/ALD1117 are builiding blocks for differential amplifier input stages, transmission gates, multiplexer applications, current sources, current mirrors and other precision analog circuits. FEATURES * * * * * * * * * Low threshold voltage of -0.7 Low input capacitance Low VOS 2mV typical High input impedance -- 1014 typical Low input and output leakage currents Negative current (IDS) temperature coefficient Enhancement-mode (normally off) DC current gain 10 9 Low input and output leakage currents APPLICATIONS * * * * * * * * Precision current sources Precision current mirrors Voltage Choppers Differential amplifier input stage Voltage comparator Data converters Sample and Hold Precision analog signal processing PIN CONFIGURATION ALD1117 DP1 GP1 SP1 V1 2 3 4 DA, PA, SA PACKAGE ALD1107 DP1 GP1 SP1 V1 2 3 4 5 6 7 DB, PB, SB PACKAGE 14 13 12 11 10 9 8 DP2 GP2 SP2 V+ DP3 GP3 SP3 1 1 8 7 6 5 DP2 GP2 SP2 V+ ORDERING INFORMATION -55C to +125C 8-Pin CERDIP Package ALD1117 DA 14-Pin CERDIP Package ALD1107 DB Operating Temperature Range* 0C to +70C 0C to +70C 8-Pin Plastic Dip Package ALD1117PA 14-Pin Plastic Dip Package ALD1107 PB 8-Pin SOIC Package ALD1117 SA 14-Pin SOIC Package ALD1107 SB DP4 GP4 SP4 * Contact factory for industrial temperature range. BLOCK DIAGRAM ALD1107 V- (4) DP1 (1) DP2 (14) BLOCK DIAGRAM ALD1117 V - (4) DP3 (10) DP4 (5) ~ GP3 (9) DP1 (1) ~ DP2 (8) GP1 (2) GP2 (13) GP4 (6) GP1 (2) GP2 (7) SP1 (3) V+ (11) SP2 (12) SP3 (8) V+ (11) SP4 (7) SP1 (3) V+ (5) SP2 (6) (c) 1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com ABSOLUTE MAXIMUM RATINGS Drain-source voltage, VDS Gate-source voltage, VGS Power dissipation Operating temperature range Storage temperature range Lead temperature, 10 seconds -13.2V -13.2V 500 mW 0C to +70C -55C to +125C -65C to +150C +260C PA, SA, PB, SB package DA, DB package OPERATING ELECTRICAL CHARACTERISTICS TA = 25C unless otherwise specified ALD1107 Parameter Gate Threshold Voltage Offset Voltage VGS1-VGS2 Gate Threshold Temperature Drift 2 On Drain Current Transconductance ALD1117 Max -1.0 Min -0.4 Typ -0.7 Max -1.0 Unit V Test Conditions I DS = -1.0A VGS = VDS Symbol VT Min -0.4 Typ -0.7 VOS 2 10 2 10 mV IDS = -10A VGS = VDS TCVT -1.3 -1.3 mV/C IDS (ON) -1.3 -2 -1.3 -2 mA VGS = VDS = -5V GIS Gfs GOS 0.25 0.67 0.5 40 0.25 0.67 0.5 40 mmho VDS = -5V IDS = -10mA % mho VDS = -5V IDS = -10mA Mismatch Output Conductance Drain Source On Resistance Drain Source On Resistance Mismatch Drain Source Breakdown Voltage Off Drain Current 1 Gate Leakage Current Input Capacitance 2 Notes: 1 2 R DS (ON) 1200 1800 1200 1800 VDS = -0.1V VGS = -5V RDS (ON) 0.5 0.5 % VDS = -0.1V VGS = -5V BVDSS -12 -12 V IDS = -1.0A VGS = 0V IDS (OFF) 10 400 4 10 1 3 10 400 4 10 1 3 pA nA pA nA pF VDS = -12V VGS = 0V TA = 125C VDS = 0V VGS = -12V TA = 125C IGSS CISS 0.1 0.1 1 1 Consists of junction leakage currents Sample tested parameters ALD1107/ALD1117 Advanced Linear Devices 2 TYPICAL PERFORMANCE CHARACTERISITCS OUTPUT CHARACTERISTICS 500 DRAIN SOURCE CURRENT (mA) VBS = 0V TA = 25C VGS = -12V -10V -8V -6V -2.5 -4V -2V 0 0 -2 -4 -6 -8 -10 -12 DRAIN SOURCE VOLTAGE (V) LOW VOLTAGE OUTPUT CHARACTERISTICS DRAIN SOURCE CURRENT (A) -10 -7.5 250 VBS = 0V TA = 25C VGS = -12V -6V -4V -2V 0 -5.0 -250 -500 -320 -160 0 160 320 DRAIN SOURCE VOLTAGE (mV) FORWARD TRANSCONDUCTANCE vs. DRAIN SOURCE VOLTAGE FORWARD TRANSCONDUCTANCE (mmho) 1.0 0.5 0.2 0.1 0.05 0.02 0.01 0 -2 -4 -6 -8 -10 -12 TA = +25C IDS = -1mA TA = +125C -20 TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS DRAIN SOURCE CURRENT (A) VBS = 0V -15 2V 4V 6V 8V 10V 12V VBS = 0V f = 1KHz IDS = -5mA -10 -5 VGS = VDS TA = 25C 0 0 -0.8 -1.6 -2.4 -3.2 -4.0 DRAIN SOURCE VOLTAGE (V) GATE SOURCE VOLTAGE (V) DRAIN SOURCE ON RESISTANCE RDS (ON) vs. GATE SOURCE VOLTAGE DRAIN SOURCE ON RESISTANCE (K) 100 VDS = 0.4V VBS = 0V 10 TA = +125C OFF DRAIN CURRENT vs. AMBIENT TEMPERATURE OFF DRAIN SOURCE CURRENT (pA) 1000 VDS = -12V VGS = VBS = 0V 100 1 TA = +25C 0.1 0 -2 -4 -6 -8 -10 -12 10 1 -50 -25 0 +25 +50 +75 +100 +125 GATE SOURCE VOLTAGE (V) AMBIENT TEMPERATURE (C) ALD1107/ALD1117 Advanced Linear Devices 3 TYPICAL APPLICATIONS CURRENT SOURCE MIRROR V+ = +5V 1/2 ALD1107 or ALD1117 V+ = +5V Q3 Q4 CURRENT SOURCE WITH GATE CONTROL 1/2 ALD1107 or ALD1117 V+ = +5V Q3 Q4 ISET RSET I SOURCE ISET Digital Logic Control of Current Source ON Q1 1/4 ALD1106 or 1/2 ALD1116 RSET ISOURCE Q1 1/2 ALD1106 or ALD1116 Q1, Q2: N - Channel MOSFET Q3, Q4: P - Channel MOSFET Q2 I SOURCE = ISET = V+ -Vt RSET ~ = 4 RSET OFF Q1 : N - Channel MOSFET Q3,Q4 : P - Channel MOSFET DIFFERENTIAL AMPLIFIER V+ 1/2 ALD1107 or ALD1117 CURRENT SOURCE MULTIPLICATION V+ = +5V PMOS PAIR Q3 Q4 VOUT VIN+ Q1 Q2 NMOS PAIR ISET RSET ISOURCE = ISET x N QSET Q1 Q2 Q3 QN VIN- 1/2 ALD1106 or ALD1116 Current Source Q1, Q2: N - Channel MOSFET Q3, Q4: P - Channel MOSFET QSET, Q1..QN: ALD1106 or ALD1116 N - Channel MOSFET ALD1107/ALD1117 Advanced Linear Devices 4 TYPICAL APPLICATIONS BASIC CURRENT SOURCES N- CHANNEL CURRENT SOURCE V+ = +5V ISET ISOURCE RSET P- CHANNEL CURRENT SOURCE V+ = +5V 1/2 ALD1107 or ALD1117 8 7 6 3 2 5 I SOURCE ISET RSET Q4 Q2 8 5 6 2 7 3 Q1 1 1/2 ALD1106 or ALD1116 Q3 ISOURCE = ISET = V+ - Vt RSET ~ V+ - 1.0 = ~ = RSET 4 RSET Q1, Q2 : N - Channel MOSFET Q3, Q4: P - Channel MOSFET CASCODE CURRENT SOURCES V+ = +5V V+ = +5V ALD1107 ISET ISOURCE Q4 RSET Q1 Q2 Q3 Q3 Q4 Q2 Q1 ISET RSET ISOURCE ALD1106 V+ - 2Vt RSET 3 RSET ISOURCE = ISET = ~ = Q1, Q2, Q3, Q4: N - Channel MOSFET (ALD1101 or ALD1103) Q1, Q2, Q3, Q4: P - Channel MOSFET (ALD1102 or ALD1103) ALD1107/ALD1117 Advanced Linear Devices 5 |
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