View TA2123AF_156995.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

TA2123AF
TOSHIBA Bipolar Integrated Circuit Silicon Monolithic
TA2123AF
1.5V Stereo Headphone Amplifier
The TA2123AF is the system amplifier IC which is developed for playback stereo headphone equipments. It is built in dual auto-reverse preamplifiers, dual power amplifiers with bass / treble boost function, AMS (automatic music sensor) function, beep function, AGC for power amplifier etc.
Features
* Power amplifier stage * In case of output coupling type, the supply current decreases. (built-in center amplifier switch) * Built-in bass boost function * Built-in treble boost function * Built-in power amplifier muting function * Built-in input terminal for beep signal * Built-in input capacitor for reducing buzz noise * GV = 24dB (typ.) * Built-in AGC circuit (in case of boost mode, this circuit operates.) * Low supply current (VCC = 1.3V, f = 1kHz, RL = 32, Ta = 25C, typ.)
No Signal Output coupling type OCL type 1.5mA 2.2mA 0.1mW x 2 3.0mA 4.9mA 0.5mW x 2 5.0mA 8.6mA
Weight: 0.17g (typ.)
*
Preamplifier stage * Auto-reverse compatible * Built-in input capacitor for reducing buzz noise * Input coupling condensor-less * Built-in metal mode drivers * Preamplifier muting function
* * * *
Built-in ripple filter circuit Built-in AMS (automatic music sensor) function (mixer amplifier and level comparator) Built-in power switch Operating supply voltage range (Ta = 25C) VCC (opr) = 0.95~2.2V
1
2002-10-30
TA2123AF
Block Diagram
OUTC VREF OUT BST OUT
DET +-
PW INA
AGC IN
EQA
PW INB
PW NFA
PW NFB
26
+-
BST NF
PW INC
36
35
34
33 BST +
32
31
30
29
28
27
OFF C-AMP SW
37
AGC DET
EQB
25 24 23
LPF
RF IN
+-
-
+ 38 MT TC BEEP
39
PW GND
OUTB OUTC
BEEP
PW C
PW B +
22 21
RF OUT VCC
AMS OUT 40 OFF
RL RL
MT SW ON PW SW
41 42 43 44 45
+ PW A -
20 19 RIPPLE FILTER 18 17 16 15 14
OUTA VCC
BASE RF OUT + -+ -
OFF RF OUT
BST SW
F/R SW
SW + COMP -
FWD
PRE SW
ON NOR
+-
GND
AMS DET
AMS MIX
+ -
+ -
46 M / N SW
PREA
VREF
PREB
MIX + -
PRE GND
47 48
VREF OUT
VREF IN
MTL DRV
1 2 3 VREF OUT 4 5 6 7 8 MTL DRVA 9 MTL DRVB 10 PRE OUTB 11 12
13
AMS SW
PRE OUTA
+ - PRE NFA
-
VREF OUT
VREF OUT
+-
+
PRE NFB
AMS IN
INA-F
INB-F
INB-R
INA-R
2
2002-10-30
TA2123AF
Terminal Explanation
(terminal voltage: Typical terminal voltage at no signal with test circuit, VCC = 1.3V, Ta = 25C)
Terminal No. 1 2 4 5 6 11 3 48 7 10 8 9 Name INA-F INB-F INB-R INA-R PRE NFA NF of preamplifier PRE NFB VREF OUT VREF IN PRE OUTA Output of preamplifier PRE OUTB MTL DRVA MTL DRVB
8 7
Function Input of preamplifier F / R SW (pin 44) "L" level: Pin 1 / 2 "H" level: Pin 4 / 5 Refer to application note 3 (2)
Internal Circuit
VREF OUT
Terminal Voltage (V)
FWD
1 5pF 10pF 6 5pF 10pF 5
REV
0.73
500 FWD REV
500 0.7
Output of reference circuit
48 3
0.73
+-
+-
Input of reference circuit
0.44
Metal driver terminal On resistance: 90 (typ.)
--
12
AMS IN
Input of mixer amplifier for AMS signal
12 14
0.7
14
AMS MIX
Output of mixer amplifier for AMS signal VREF OUT VREF OUT
0.7
13
AMS SW
AMS sensitivity changeover switch (this switch synchronizes with the MT SW)
13
--
MT SW ON : CURRENT SOURCEON MT SW OFF : CURRENT SOURCEOFF
3
2002-10-30
TA2123AF
Terminal No. 15 Name AMS DET Function Internal Circuit Terminal Voltage (V) 0.73
40
Input of AMS comparator circuit
15
40 16
AMS OUT GND
Output of AMS comparator circuit High level: Rectangular pulse Low level: "H" -- Output of ripple filter Ripple filter circuit supplies internal circuit except power drive stage with power source Base biasing terminal of transistor for ripple filter -- Ripple filter terminal +24
VREF OUT -- VCC RF OUT -+
-- 0
17
RF OUT
1.22
19
18
17
18 19 24 20 22 26 29 27 28
BASE VCC RF IN OUTA
46.5k
0.5 1.3 1.23
Output of power amplifier OUTB PW NFB NF of power amplifier PW NFA PW INB PW INA Input of power amplifier (this terminal also has function of an ADD amplifier input.)
29 28
20k 20k
to ADD amplifier VREF OUT
0.56
20
0.73
30k 2k
VREF OUT
0.73
20k 21 OUTC Output of center amplifier
32
VREF OUT 0.56
21
32
PW INC
Input of center amplifier
30k 2k VREF OUT -- 1.8k
100k
30
0.73
23 25 30
PW GND EQB EQA
Power GND for power drive stage Equalizer circuit (this circuit synchronizes with the BST SW) Input impedance : 1.9 (typ.)
0
--
4
2002-10-30
TA2123AF
Terminal No. Name Function 20k
PW IN
Internal Circuit
Terminal Voltage (V)
20k 31 LPF Low pass filter terminal of bass boost 10k 10k
31
0.73 VREF OUT
VREF OUT 33 BST OUT Output of boost amplifier 10k 20k 0.73
33
100k 34 BST NF NF of boost amplifier
34
0.73
VREF OUT Input of boost AGC circuit The input level to the boost amplifier is controlled by the input level of this terminal. Input impedance: 10k (typ.) 10k
OUTC
35
AGC IN
-
+
35
VREF OUT
0.73
37
C-AMP SW
Center amplifier on / off switch Output type of power amplifier OCL type: OPEN (C-AMP ON) Output coupling type: GND (C-AMP OFF)
-
+
36
DET
Smoothing terminal of boost AGC circuit
36
--
Center amplifier --
37
-
+
38
MT TC
Smoothing terminal of MT SW In order to reduce a pop noise at power amplifier on / off switching
10A
38
0.7
5
2002-10-30
TA2123AF
Terminal No. Name Function Input of beep signal This terminal receives beep signal of a microcomputer etc. This terminal should be set as high impedance or "H" when not using this function Muting switch of power amplifier Power amp. on: "H" level Power amp. off: "L" level Refer to application note 3 (2) Forward / reverse switch Forward: "L" level Reverse: "H" level Refer to application note 3 (2) Muting switch of preamplifier Preamp. on: "L" level Preamp. off: "H" level Refer to application note 3 (2) Internal Circuit Terminal Voltage (V)
39
BEEP
39
20k
Power amplifier
0.7
41
MT SW
--
44
F / R SW
41
47k
--
45
PRE SW
--
42
PW SW
Power on / off switch IC on: "H" level IC off: "L" level Refer to application note 3 (2)
42
47k
--
43
BST SW
Boost on / off switch BST on: OPEN / "H" level BST off: "L" level Refer to application note 3 (2)
43
20k
--
46
M / N SW
Metal / normal mode switch Metal mode: OPEN / "H" level Normal mode: "L" level Refer to application note 3 (2) Power GND for power drive stage
46
10k --
47
PRE GND
--
0
6
2002-10-30
TA2123AF
Application Note
1. Preamplifier stage (1) Output DC voltage of preamplifier Output DC voltage of preamplifier is determined by external resistors R1 and R2 as shown in Fig.1. VO (PRE) = VREF OUT-V x (R2 / R1 + 1) * * VREF OUT = 0.73V (typ.) V is an offset voltage which is designed to 28.6mV.
+ V = 28.6mV - R1 R2 +- VREF OUT Fig.1
Output DC voltage of preamplifier
It is as follows in case that the DC voltage is calculated by the constant of a test circuit. VO (PRE) = 0.73V-28.6mV (200k / 22k + 1) =0.44V Output DC voltage of preamplifier should be fixed about VCC / 2, because preamplifier get a enough dynamic range. (2) AMS (automatic music sensor) function A block diagram is shown in Fig.2. This function can AMS (automatic music sensor) and BS (blank skip). * The comparator input level is higher than comparator sensitivity. Rectangle wave is outputted. * The comparator input level is lower than comparator sensitivity. High level is outputted.
The sensitivity changeover is determined by AMS switch (the comparator sensitivity doesn't change.). * Automatic music sensor mode The AMS SW is also turned on when the MT SW is turned on. And the comparator input level is determined by external resistors (R4~R6) and capacitors (C3, C4) from mixer amplifier output level. The transfer function is as follows. VO / Vi = R3 / [R1R2 / (R1 + R2)] x {jC4R5R6 / [R4R5 + j (C3R4R5 + C4R4R5 + C4R4R6 + C4R5R6) - 2C3C4R4R5R6]}
7
2002-10-30
TA2123AF
* Blank skip mode The AMS SW is also turned of when the MT SW is turned off. And the comparator input level is determined by external resistors (R4, R6) and capacitors (C3, C4) from mixer amplifier output level. The transfer function is as follows. VO / Vi = R3 / [R1R2 / (R1 + R2)] x {jC4R6 / [1 + j (C3R4 + C4R4 + C4R6) - 2C3C4 R4R6]}
VREF OUT + MIX -
VREF OUT
Synchronizes with the MT SW
COMP
R5
C1 R1 PRE OUT C2 R2
12 AMS IN
14
13
15
40
AMS MIX R3
AMS AMS SW DET C3 R6 C4
AMS OUT
VCC R7
R4
VREF OUT Fig.2 AMS system
8
2002-10-30
TA2123AF
2. Power amplifier stage (1) Input of power amplifier Each input signal should be applied through a capacitor. In case that DC current or DC voltage is applied to each amplifier, the internal circuit has unbalance and the each amplifier doesn't operate normally. It is advised that input signal refer to VREF voltage, in order to reduce a pop noise or low frequency leak. (2) Output application This IC can chose the output coupling type and OCL type. The C-AMP SW should be connected to GND in case that the output coupling type is chosen. The supply current decreases when not using the bass boost function. (3) Bass boost function (a) System This IC has the bass boost function in power amplifier stage. After this system adds the low frequency ingredient of side amplifier, it is applied into the center amplifier. And the bass boost level is controlled by the variable impedance circuit (Fig.3) * Flow of the bass boost signal Variable impedance circuitBoost amplifierCenter amplifier * Flow of the bass boost level Output of center amplifierAGC DET (level detection) Variable impedance circuit operation
The system of treble boost function is realized by frequency characteristic adjustment of the side amplifier.
28
PW A PW C PW B BST
20 21 22 32
27
Ra Ra
31
ATT Rd
33
C4
C1
36
- C6
+
AGC DET
34 35
Rc -+ R1 C2
Flow of the Bass boost level C5 Rb
Fig.3
Bass boost system
C3
9
2002-10-30
RL
Flow of the bass boost signal
RL
TA2123AF
(b) AGC circuit The AGC circuit of bass boost function is realized by the variable impedance circuit. The AGC DET circuit detects the low frequency level of center amplifier. When this level becomes high, the variable impedance circuit operates, and this circuit attenuates the input level of center amplifier. The AGC DET circuit is the current input, so that the output voltage of ADD amplifier is changed into the current ingredient by resistor Rb and capacitor C5 which are shown in Fig.3. And it is smoothed and detected by DET circuit (pin 36). And the direct current should not be applied to the AGC IN circuit, because, as for the circuit, the sensitivity setup is high. Moreover, the AGC signal level is decreased in case that the resistor R5 is connected with the capacitor C5 in series. And the AGC point can be changed. But the center amplifier is clipped in the low frequency in case that the resistor R5 is larger. (c) Bass boost The signal flow of bass boost function is as follows, refer to Fig.4. LPF (internal resistors 2R1 and external capacitor C1) ATT (variable impedance circuit) HPF (BST amplifier) BPF (LPF: internal resistor R4 and external capacitor C3, HPF: external capacitor C4 and internal resistor R5) Center amplifier The center amplifier signal becomes the reverse phase, because the phase of audio frequency range is reversed with two LPFs.
PW A
20
C1
27
2R1 2R1 20k
31
ATT
BST
R4 = 20k
33
20k
C3
R5
28
C4
32
PW C
21
34
R2 = 100k
+-
C2 R3
G1()
LPF
A1
G2()
HPF
G3()
BPF
A2
Fig.4
Block diagram of bass boost
RL
20k
10
2002-10-30
TA2123AF
The transfer function of bass boost is as follows from Fig.4. G () = G1 ()A1G2 ()G3 ()A2 The bass boost effect is changed by external resistor or external capacitor. The transfer function and cut off frequency are as follows. (1) Transfer function of LPF G1 () = 1 / (1 + jC1R1) fL = 1 / 2C1R1 (2) Transfer function of BPF G3 () = jC4R5 / [1 + j (R4C3 + R5C3 + C4R4) - 2 R4C3R5C4] (3) HPF gain and cut off frequency G2 () = 1 + R2 / (R3 + 1 / jC2) fHC = 1 / (2 F R3C2)
Response (dB)
fO = 1 / 2p R4 x C3 x R5 x C4
30 HPF 20
10
Total characteristic
0
fL LPF
A Ra Ca Rb Cb
-10 BPF -20 fO
Fig.5
BPF
-30 3
10
100
300
Frequency f
(Hz)
Graph.1 Characteristic of bass boost
(4) fO and fL The fL and fO should be set up out of the audio frequency range. In case that the fO and fL is inside of audio frequency range and AGC circuit operates, the voltage gain decrease. (5) HPF The fHC should be made 1 / 2 or less frequency as compared with the fL or fO. The phase difference is large near the fHC, so that the bass boost level runs short. And the HPF gain of middle or high frequency range should be set to 10dB or more.
11
2002-10-30
TA2123AF
(4) Treble boost The EQ terminal is synchronizes with the BST SW, and the input impedance is changed. BST OFF: 100k (typ.) BST ON: 1.9k (typ.) The voltage gain increase 6 dB (typ.) at high frequency range in case that the capacitor CX is connected between the EQ terminal and the PW NF terminal.
PW IN 28 PW NF CX
29
+ -
PWA / B
EQ
30
Fig.6
Treble boost
(5) Cross talk of output coupling type In case of output coupling mode, the cross talk is determined by resistor RL and capacitor C which are connected with power amplifier output as shown in Fig.7. The formula is shown below. G () = 1 / 2 [1 + jC (RL / 2)] CT = 20og|Gv| = 20og [1 / 2 [ 1 + (w / w0 )2 ]], 0 = 1 / C (RL / 2) At f = 1kHz, C1 = 220F, RL = 32, The cross talk becomes about 33 dB.
PW A
VREF R2 RL RL C Cross talk of output coupling type - C + + - RL RL ~
PW C
PW B
Fig.7
12
2002-10-30
TA2123AF
3. Total (1) Ripple filter It is necessary to connect a low saturation transistor (2SA1362 etc.) for ripple filter, because this IC doesn't have transistor for ripple filter. Care should be taken to stabilize the ripple filter circuit, because the ripple filter circuit supplies internal circuit except power drive stage with power source. (2) Switch terminal (a) PW SW It is necessary to connect an external pull-down resistor with terminal PW SW, in case that this IC is turned on due to external noise etc. (The PW SW sensitivity is designed highly.) (b) MT SW, BST SW, F / R SW, PRE SW, M / N SW The current flows through terminals of MT SW, BST SW, PRE SW and M / N SW, in case that these terminals are connected with VCC line independently, even though the PW SW is off-mode. It is necessary to connect an external pull-down resistor with each terminals in case that IC is turned on due to external noise etc. These switches are designed highly.) * The pop noise at turning on / off MT SW can be reduced by the external capacitor of the MT TC terminal. (c) C-AMP SW The C-AMP SW terminal should not be connected with high voltage of VCC etc., because internal circuit is broken. (d) Sensitivity voltage of each switch (Ta = 25C)
(1) MT SW,F / R SW,PRE SW,PW SW
2.5 2.5 2.2V 2 2.2V
(2) BST SW,M / N SW
(V)
(V)
Terminal voltage V41, V44, V45, V42
2
1.5
H
Terminal voltage V43,V46
1.5
H
1 0.8V
1 0.8V
0.5 0.3V L 0 1 1.5 2 2.5
0.5 0.3V L 0 1 1.5 2 2.5
Supply voltage
(V)
Supply voltage
(V)
MT SW (V41) F / R SW (V44) PRE SW (V45) 'H' 'L' Muting OFF Muting ON REV mode FWD mode Preamp. OFF Preamp. ON
PW SW (V42) IC ON IC OFF 'H', open 'L'
BST SW (V43) BST ON BST OFF
M / N SW (V46) Metal mode Normal mode
13
2002-10-30
TA2123AF
(3) Capacitor Small temperature coefficient and excellent frequency characteristic is needed by capacitor below. * Oscillation preventing capacitors for power amplifier output * * * Capacitor between VREF and GND Capacitor between VCC and GND Capacitor between RF OUT and GND
Maximum Ratings (Ta = 25C)
Characteristic Supply voltage Output current (PW AMP.) Power dissipation Operating temperature Storage temperature Symbol VCC IO (peak) PD (Note) Rating 4.5 100 750 -25~75 -55~150 Unit V mA mW C C
Topr Tstg
Note: Derated above Ta = 25C in proportion of 6mW / C
14
2002-10-30
TA2123AF
Electrical Characteristics
Unless Otherwise Specified: VCC = 1.3V, Ta = 25C, f = 1kHz, SW1: b, SW2: b, SW3: a, SW4: OPEN SW5: a, SW6: a, SW7: ON, SW8: a / b, SW9: b, SW10: ON Preamplifier: Normal Mode, Rg = 2.2k, RL = 10k, SW1: a Power Amplifier: Rg 600, RL = 32, SW2: a
Characteristic Quiescent supply current 1 Quiescent supply current 2 Quiescent supply current 3 Symbol ICCQ1 ICCQ2 ICCQ3 ICCQ4 GVO GVC Vom1 THD1 Test Circuit -- -- -- Test Condition OCL mode, PRE + PW OCL mode, PRE: OFF SW9: a Coupling mode PRE + PW, SW4: ON Coupling mode PRE : OFF, SW4: ON SW9: a Vo = -22dBV NF resistor (150): Short Vo = -22dBV THD = 1% VCC = 1V, Vo = -22dBV Rg = 2.2k BPF: 20Hz~20kHz NAB (GV = 35dB, f = 1kHz) SW1: b Vo = -22dBV fr = 100Hz, Vr = -32dBV BPF = 100Hz Vo = -22dBV SW9: ba IL = 100A, SW10: OPEN SW5: b SW5: a Min. -- -- -- Typ. 2.2 1.7 1.5 Max. 4.0 3.0 2.7 mA Unit
Quiescent supply current 4
--
--
1.0
1.8
Open loop voltage gain Closed loop voltage gain Maximum output voltage Total harmonic distortion Preamp. stage Equivalent input noise voltage Cross talk (CH-A / CH-B) Cross talk (forward / reverse) Ripple rejection ratio Preamplifier muting attenuation Driver on resistance AMS sensitivity 1 AMS sensitivity 2 Forward mode on voltage Reverse mode on current Preamplifier on voltage Preamplifier off current Metal mode on voltage Normal mode on voltage
-- -- -- --
65 -- 160 --
80 35 250 0.08
-- -- -- 0.3
dB mVrms %
Vni CT1 CT2 RR1 ATT1 R1 AMS1 AMS2 V44 I44 V45 I45 V46 (M) V46 (N)
--
--
1.7
2.7
Vrms
-- -- -- -- -- -- -- -- -- -- -- -- -- VCC = 0.95V
-- -- -- -- -- -58.3 -69.7 0 5 0 5 0.8 0
60 62 54 84 90 -56.3 -67.7 -- -- -- -- -- --
-- -- -- -- -- -54.3 -65.7 0.3 -- 0.3 -- 0.95 0.3 dBV V A V A V V dB
15
2002-10-30
TA2123AF
Characteristic Voltage gain 1 Channel balance Voltage gain 2 Output power Power amp. stage Total harmonic distortion Output noise voltage Cross talk Ripple rejection ratio Power amplifier muting attenuation Beep signal input sensitivity Voltage gain 3 Boost amp. stage Symbol GV1 CB GV2 Po THD Vno CT3 RR2 ATT2 SEN Test Circuit -- -- -- -- -- -- -- -- -- -- Test Condition Vo = -22dBV Vin (A) = Vin (B) = -Vin (C) Vo = -22dBV VCC = 1.5V THD (A) = THD (B) = 10% Po = 1mW Rg = 600, SW2: b BPF = 20Hz~20kHz Vo = -22dBV VCC = 1V, fr = 100Hz Vr = -32dBV, BPF = 100Hz Vo = -22dBV SW5: ab Vo = -62dBV, SW5: OPEN f = 40Hz, Vin = -64dBV SW7: Open Monitor: C-AMP. -GND f = 40Hz, Vin = -47dBV SW7: Open Monitor: C-AMP. -GND f = 40Hz, THD = 1% SW3: b, SW7: Open f = 40Hz, Vo = -32dBV SW7: Openon IL = 100A, SW7: Open VCC = 1V, IRF = 20mA VCC = 1V, IRF = 20mA BPF = 100Hz, fr = 100Hz Vr = -32dBV Min. -- -1.5 28 3 -- -- 34 -- -- 0.7 Typ. 24 0 30 6 0.1 40 43 70 72 1.3 Max. -- +1.5 32 -- 0.8 80 -- -- -- 2.2 Ap-p dB mW % Vrms dB Unit
GV3
--
41
44
47 dB
Voltage gain 4 Maximum output voltage Muting attenuation Equalizer on resistance
GV4 Vom2 ATT3 R2 VRF OUT RR3 I41 V41 I42 V42 V43 (ON) V43 (OFF)
--
27.5
30.5
33.5
-- -- -- -- -- -- -- -- -- -- --
-- -- -- 0.89 35 5 0
86 53 1.9 0.92 42 -- -- -- -- -- --
-- -- -- -- -- -- 0.3 -- 0.3 0.95 0.3
mVrms dB k V dB A V A V V V
Ripple filter output voltage Ripple filter ripple rejection ratio Power amplifier on current Power amplifier off voltage Power on curent Power off voltage Boost on voltage Boost off voltage
VCC = 0.95V
5 0 0.8 0
16
2002-10-30
TA2123AF
Test Circuit (preamplifier stage)
36
25
37
RF IN
24
4.7F +-
VCC
18k
40 41 42
AMS OUT MT SW
4.7F
a RF OUT SW5 b VCC a SW6 b RF OUT
SW8
PW SW TA2123AF
VCC BASE
VCC
19 18 17
+
a b a b
44
F / R SW PRE SW M / N SW PRE OUTA PRE OUTB MTL DRVA MTL DRVB PRE GND VREF OUT PRE NFA INB-F INB-R INA-R VREF IN
INA-F
10F
RF OUT GND AMS DET AMS MIX PRE NFB AMS SW
AMS IN
2SA1362-Y RF OUT + - VREF OUT 22k
10k
SW9
45
16 15 14 13
2.2F
+
48
2.7k 7.5k 0.22F ~
Rg = 600
1
2
3
4
5
6
7
8
9
10
11
12
0.033F
2.2k
-
22k
150 33F
Rg = 600
22F
-
SW1 a1 a2 a3 -+ ~ 4.7F b a4
1F
10k
10k
PRE OUTA
PRE OUTB
1F
+
150 33F
0.022F
1.8k
1.8k
0.022F
22k
+ 6.8k
6.8k +
-
1000F x 4 2.2k x 4
200k
2.2k 0.033F
200k
17
2002-10-30
22k
47
0.1F
SW10 -
46
-
TA2123AF
Test Circuit (power amplifier stage)
Rg = 600
0.33F 0.33F
20k OUTC
Rg = 600
~ 0.15F 0.012F
600 600 Rg = 600
BST OUT
100k 0.1F 4.7F 2k -+
0.33F
~ a SW2A
29 28
~ a b b SW2B 1F
27
VREF OUT 0.012F
25
2.2F +-
36
35
34
SW3A 33
SW3B 32 31
30
1F
26
b
aa
b
DET
BST OUT
AGC IN
BST NF
LPF
EQA
PW NFA
PW NFB
PW INC
PW INA
PW INB
EQB
SW4 4.7F 38 MT TC - +
39
37 C-AMP SW
RF IN
24 23 22 21 20 19 18 17
4.7F +-
PW GND OUTB OUTC
32 32
BEEP
OUTB
1.5
0.47F
1.5
OUTC OUTA VCC
a RF OUT SW5 b VCC a SW6 b SW7
41
MT SW
OUTA TA2123AF VCC BASE RF OUT GND
0.47F
1.5 0.47F
43
BST SW
2SA1362-Y RF OUT
10F
+ - OUTB
32 32
16
48
VREF IN
1
VREF OUT
2.2F
+-
47
PRE GND
13
3
12
22F
-+
Output circut of output coupling type
OUTB OUTC OUTA
22 21 20
1.5
-
42
PW SW
47F
+
0.47F
18
220F
1.5
2002-10-30
-
0.47F 4.7
+
OUTC OUTA
TA2123AF
Package Dimensions
Weight: 0.17g (typ.)
19
2002-10-30
TA2123AF
RESTRICTIONS ON PRODUCT USE
000707EBA
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The products described in this document are subject to the foreign exchange and foreign trade laws. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
20
2002-10-30

▲Up To Search▲

Price & Availability of TA2123AF

	To Download TA2123AF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .