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K9F1208R0B K9F1208B0B K9F1208U0B
Preliminary FLASH MEMORY
Document Title
64M x 8 Bit NAND Flash Memory
Revision History
Revision No. History
0.0 0.1 Initial issue. 1. Note 1 ( Program/Erase Characteristics) is added( page 14 ) 2. NAND Flash Technical Notes is changed. -Invalid block -> initial invalid block ( page 16 ) -Error in write or read operation ( page 17 ) -Program Flow Chart ( page 17 ) 3. Vcc range is changed -2.4V~2.9V -> 2.5V~2.9V -1.7V~1.95V ->1.65V~1.95V 4. Multi plane operation and Copy-Back Program are not supported with 1.8V
device.
Draft Date
Apr. 24th 2004 Oct. 11th.2004
Remark
Advance Preliminary
Note : For more detailed features and specifications including FAQ, please refer to Samsung's Flash web site. http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you.
1
K9F1208R0B K9F1208B0B K9F1208U0B
Preliminary FLASH MEMORY
64M x 8 Bit NAND Flash Memory
PRODUCT LIST
Part Number K9F1208R0B-G,J K9F1208B0B-Y,P K9F1208B0B-G,J K9F1208U0B-Y,P K9F1208U0B-G,J K9F1208U0B-V,F 2.7 ~ 3.6V Vcc Range 1.65 ~ 1.95V 2.5 ~ 2.9V PKG Type FBGA TSOP1 FBGA TSOP1 FBGA WSOP1
FEATURES
* Voltage Supply - 1.8V device(K9F1208R0B) : 1.65~1.95V - 2.7V device(K9F1208B0B) : 2.5~2.9V - 3.3V device(K9F1208U0B) : 2.7 ~ 3.6 V * Organization - Memory Cell Array : (64M + 2048K)bit x 8 bit - Data Register : (512 + 16)bit x 8bit * Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (16K + 512)Byte * Page Read Operation - Page Size : (512 + 16)Byte - Random Access : 15s(Max.) - Serial Page Access : 50ns(Min.) (*K9F1208R0B : tRC = 60ns(Min.) * Fast Write Cycle Time - Program time : 200s(Typ.) - Block Erase Time : 2ms(Typ.) * Command/Address/Data Multiplexed I/O Port * Hardware Data Protection - Program/Erase Lockout During Power Transitions * Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles - Data Retention : 10 Years * Command Register Operation * Intelligent Copy-Back * Unique ID for Copyright Protection * Package - K9F1208X0B-YCB0/YIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9F1208X0B-GCB0/GIB0 63- Ball FBGA (8.5 x 13 , 1.0 mm width) - K9F1208U0B-VCB0/VIB0 48 - Pin WSOP I (12X17X0.7mm) - K9F1208X0B-PCB0/PIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package - K9F1208X0B-JCB0/JIB0 63- Ball FBGA - Pb-free Package - K9F1208U0B-FCB0/FIB0 48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package * K9F1208U0B-V,F(WSOPI ) is the same device as K9F1208U0B-Y,P(TSOP1) except package type.
GENERAL DESCRIPTION
Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.7V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200s on the 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page can be read out at 50ns(K9F1208R0B : 60ns) cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F1208X0Bs extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1208X0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
2
K9F1208R0B K9F1208B0B K9F1208U0B
PIN CONFIGURATION (TSOP1)
K9F1208U0B-YCB0,PCB0/YIB0,PIB0
N.C N.C N.C N.C N.C N.C R/B RE CE N.C N.C Vcc Vss N.C N.C CLE ALE WE WP N.C N.C N.C N.C N.C 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 N.C N.C N.C N.C I/O7 I/O6 I/O5 I/O4 N.C N.C N.C Vcc Vss N.C N.C N.C I/O3 I/O2 I/O1 I/O0 N.C N.C N.C N.C
Preliminary FLASH MEMORY
PACKAGE DIMENSIONS
48-PIN LEAD/LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I) 48 - TSOP1 - 1220F
Unit :mm/Inch
0.10 MAX 0.004 #48 ( 0.25 ) 0.010 12.40 0.488 MAX #24 #25 1.000.05 0.0390.002 0.25 0.010 TYP
+0.075
20.000.20 0.7870.008
0.20 -0.03
+0.07
#1
0.008-0.001
0.16 -0.03
+0.07
+0.003
0.50 0.0197
12.00 0.472
0.05 0.002 MIN
0.125 0.035
0~8
0.45~0.75 0.018~0.030
( 0.50 ) 0.020
3
0.005-0.001
+0.003
18.400.10 0.7240.004
1.20 0.047MAX
Package Dimensions
PIN CONFIGURATION (WSOP1)
K9F1208U0B-VCB0,FCB0/VIB0,FIB0
N.C N.C DNU N.C N.C N.C R/B RE CE DNU N.C Vcc Vss N.C DNU CLE ALE WE WP N.C N.C DNU N.C N.C 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 N.C N.C DNU N.C I/O7 I/O6 I/O5 I/O4 N.C DNU N.C Vcc Vss N.C DNU N.C I/O3 I/O2 I/O1 I/O0 N.C DNU N.C N.C
FLASH MEMORY
PACKAGE DIMENSIONS
48-PIN LEAD PLASTIC VERY VERY THIN SMALL OUT-LINE PACKAGE TYPE (I) 48 - WSOP1 - 1217F
Unit :mm
0.70 MAX 15.400.10 0.580.04
#1
+0.07 -0.03
#48
+0.07 -0.03
0.16
12.40MAX
12.000.10
0.50TYP (0.500.06)
0.20
#24
#25 (0.01Min)
0.10 +0.075 -0.035
0~ 8
0.45~0.75 17.000.20
4
K9F1208R0B K9F1208B0B K9F1208U0B
PIN CONFIGURATION (FBGA)
K9F1208X0B-GCB0,JCB0/GIB0,JIB0
1
N.C N.C
Preliminary FLASH MEMORY
2
3
4
5
6
N.C N.C N.C N.C
A B
C
N.C
/WP NC NC NC NC NC NC Vss ALE /RE NC NC NC I/O0 I/O1 I/O2 Vss CLE NC NC NC NC NC /CE NC NC NC NC NC /WE NC NC NC NC NC R/B NC NC NC NC Vcc I/O7 Vss
D E F G H
VccQ I/O5 I/O6
I/O3 I/O4
N.C N.C N.C N.C
N.C N.C N.C N.C
Top View
5
Package Dimensions
63-Ball FBGA (measured in millimeters)
FLASH MEMORY
Top View
Bottom View
#A1 INDEX MARK(OPTIONAL)
8.500.10
6
8.500.10 0.80 x 9= 7.20 0.80 x 5= 4.00 0.80 5432
A
1
B
#A1
(Datum A)
A B
0.80 x 11= 8.80
0.80 x 7= 5.60 2.00 0.450.05 1.00(Max.) 0.25(Min.)
(Datum B)
C D E
0.80
13.000.10
2.80
F G H
63-0.450.05
0.20 M A B
Side View
13.000.10
0.10MAX
6
13.000.10
K9F1208R0B K9F1208B0B K9F1208U0B
PIN DESCRIPTION
Pin Name I/O0 ~ I/O7 (K9F1208X0B) Pin Function
Preliminary FLASH MEMORY
DATA INPUTS/OUTPUTS The I/O pins are used to input command, address and data, and to output data during read operations. The I/ O pins float to high-z when the chip is deselected or when the outputs are disabled. COMMAND LATCH ENABLE The CLE input controls the activating path for commands sent to the command register. When active high, commands are latched into the command register through the I/O ports on the rising edge of the WE signal. ADDRESS LATCH ENABLE The ALE input controls the activating path for address to the internal address registers. Addresses are latched on the rising edge of WE with ALE high. CHIP ENABLE The CE input is the device selection control. When the device is in the Busy state, CE high is ignored, and the device does not return to standby mode in program or erase operation. Regarding CE control during read operation, refer to 'Page read' section of Device operation . READ ENABLE The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid tREA after the falling edge of RE which also increments the internal column address counter by one. WRITE ENABLE The WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of the WE pulse. WRITE PROTECT The WP pin provides inadvertent write/erase protection during power transitions. The internal high voltage generator is reset when the WP pin is active low. READY/BUSY OUTPUT The R/B output indicates the status of the device operation. When low, it indicates that a program, erase or random read operation is in process and returns to high state upon completion. It is an open drain output and does not float to high-z condition when the chip is deselected or when outputs are disabled. OUTPUT BUFFER POWER VccQ is the power supply for Output Buffer. VccQ is internally connected to Vcc, thus should be biased to Vcc. POWER VCC is the power supply for device. GROUND NO CONNECTION Lead is not internally connected. DO NOT USE Leave it disconnected.
CLE
ALE
CE
RE
WE
WP
R/B
VccQ
Vcc Vss N.C DNU
NOTE : Connect all VCC and VSS pins of each device to common power supply outputs. Do not leave VCC or VSS disconnected.
7
K9F1208R0B K9F1208B0B K9F1208U0B
Figure 1-1. K9F1208X0B FUNCTIONAL BLOCK DIAGRAM
VCC VSS A9 - A25 X-Buffers Latches & Decoders Y-Buffers Latches & Decoders
Preliminary FLASH MEMORY
512M + 16M Bit NAND Flash ARRAY
A0 - A7
(512 + 16)Byte x 131072 Page Register & S/A
A8
Command Command Register
Y-Gating
I/O Buffers & Latches
VCC/VCCQ VSS Output Driver I/0 0 I/0 7
CE RE WE
Control Logic & High Voltage Generator
Global Buffers
CLE ALE WP
Figure 2-1. K9F1208X0B ARRAY ORGANIZATION
1 Block =32 Pages = (16K + 512) Byte
128K Pages (=4,096 Blocks)
1st half Page Register (=256 Bytes)
2nd half Page Register (=256 Bytes)
1 Page = 528 Byte 1 Block = 528 Byte x 32 Pages = (16K + 512) Byte 1 Device = 528Bytes x 32Pages x 4096 Blocks = 528 Mbits 8 bit 16 Byte
512Byte
Page Register
512 Byte I/O 0 1st Cycle 2nd Cycle 3rd Cycle 4th Cycle A0 A9 A17 A25 I/O 1 A1 A10 A18 *L I/O 2 A2 A11 A19 *L 16 Byte I/O 3 A3 A12 A20 *L
I/O 0 ~ I/O 7
I/O 4 A4 A13 A21 *L
I/O 5 A5 A14 A22 *L
I/O 6 A6 A15 A23 *L
I/O 7 A7 A16 A24 *L Column Address Row Address (Page Address)
NOTE : Column Address : Starting Address of the Register. 00h Command(Read) : Defines the starting address of the 1st half of the register. 01h Command(Read) : Defines the starting address of the 2nd half of the register. * A8 is set to "Low" or "High" by the 00h or 01h Command. * L must be set to "Low". * The device ignores any additional input of address cycles than reguired.
8
K9F1208R0B K9F1208B0B K9F1208U0B
Product Introduction
Preliminary FLASH MEMORY
The K9F1208X0B is a 528Mbit(553,648,218 bit) memory organized as 131,072 rows(pages) by 528 columns. Spare sixteen columns are located from column address of 512 to 527. A 528-byte data register is connected to memory cell arrays accommodating data transfer between the I/O buffers and memory during page read and page program operations. The memory array is made up of 16 cells that are serially connected to form a NAND structure. Each of the 16 cells resides in a different page. A block consists of two NAND structured strings. A NAND structure consists of 16 cells. Total 135168 NAND cells reside in a block. The array organization is shown in Figure 2. The program and read operations are executed on a page basis, while the erase operation is executed on a block basis. The memory array consists of 4,096 separately erasable 16K-byte blocks. It indicates that the bit by bit erase operation is prohibited on the K9F1208X0B. The K9F1208X0B has addresses multiplexed into 8 I/O's. This scheme dramatically reduces pin counts and allows systems upgrades to future densities by maintaining consistency in system board design. Command, address and data are all written through I/O's by bringing WE to low while CE is low. Data is latched on the rising edge of WE. Command Latch Enable(CLE) and Address Latch Enable(ALE) are used to multiplex command and address respectively, via the I/O pins. The 64M byte physical space requires 26 addresses, thereby requiring four cycles for byte-level addressing: column address, low row address and high row address, in that order. Page Read and Page Program need the same four address cycles following the required command input. In Block Erase operation, however, only the three row address cycles are used. Device operations are selected by writing specific commands into the command register. Table 1 defines the specific commands of the K9F1208X0B. The device provides simultaneous program/erase capability up to four pages/blocks. By dividing the memory array into four 128Mbit separate planes, simultaneous multi-plane operation dramatically increases program/erase performance by 4X while still maintaining the conventional 512 byte structure. The extended pass/fail status for multi-plane program/erase allows system software to quickly identify the failing page/block out of selected multiple pages/blocks. Usage of multi-plane operations will be described further throughout this document. In addition to the enhanced architecture and interface, the device incorporates copy-back program feature from one page to another of the same plane without the need for transporting the data to and from the external buffer memory. Since the time-consuming burstreading and data-input cycles are removed, system performance for solid-state disk application is significantly increased. The device includes one block sized OTP(One Time Programmable), which can be used to increase system security or to provide identification capabilities. Detailed information can be obtained by contact with Samsung.
Table 1. Command Sets
Function Read 1 Read 2 Read ID Reset Page Program (True)
(2)
1st. Cycle 00h/01h(1) 50h 90h FFh 80h 80h
(2)
2nd. Cycle 10h 11h 8Ah 8Ah D0h D0h -
3rd. Cycle 10h 11h -
Acceptable Command during Busy
O
Page Program (Dummy)(2) Copy-Back Program(True) Block Erase Multi-Plane Block Erase Read Status Read Multi-Plane Status Copy-Back Program(Dummy)(2)
00h 03h 60h 60h----60h 70h 71h
(3)
O O
NOTE : 1. The 00h command defines starting address of the 1st half of registers. The 01h command defines starting address of the 2nd half of registers. After data access on the 2nd half of register by the 01h command, the status pointer is automatically moved to the 1st half register(00h) on the next cycle. 2. Page Program(True) and Copy-Back Program(True) are available on 1 plane operation. Page Program(Dummy) and Copy-Back Program(Dummy) are available on the 2nd,3rd,4th plane of multi plane operation. 3. The 71h command should be used for read status of Multi Plane operation. 4. Multi plane operation and Copy-Back Program are not supported with 1.8V device. Caution : Any undefined command inputs are prohibited except for above command set of Table 1.
9
K9F1208R0B K9F1208B0B K9F1208U0B
Memory Map
Preliminary FLASH MEMORY
The device is arranged in four 128Mbit memory planes. Each plane contains 1,024 blocks and 528 byte page registers. This allows it to perform simultaneous page program and block erase by selecting one page or block from each plane. The block address map is configured so that multi-plane program/erase operations can be executed for every four sequential blocks.
Figure 3. Memory Array Map
Plane 0 (1024 Block)
Plane 1 (1024 Block)
Plane 2 (1024 Block)
Plane 3 (1024 Block)
Block 0 Page 0 Page 1
Block 1 Page 0 Page 1
Block 2 Page 0 Page 1
Block 3 Page 0 Page 1
Page 30 Page 31 Block 4 Page 0 Page 1
Page 30 Page 31 Block 5 Page 0 Page 1
Page 30 Page 31 Block 6 Page 0 Page 1
Page 30 Page 31 Block 7 Page 0 Page 1
Page 30 Page 31
Page 30 Page 31
Page 30 Page 31
Page 30 Page 31
Block 4088 Page 0 Page 1
Block 4089 Page 0 Page 1
Block 4090 Page 0 Page 1
Block 4091 Page 0 Page 1
Page 30 Page 31 Block 4092 Page 0 Page 1
Page 30 Page 31 Block 4093 Page 0 Page 1
Page 30 Page 31 Block 4094 Page 0 Page 1
Page 30 Page 31 Block 4095 Page 0 Page 1
Page 30 Page 31
Page 30 Page 31
Page 30 Page 31
Page 30 Page 31
528byte Page Registers
528byte Page Registers
528byte Page Registers
528byte Page Registers
10
K9F1208R0B K9F1208B0B K9F1208U0B
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol VIN/OUT Voltage on any pin relative to VSS K9F1208X0B-XCB0 K9F1208X0B-XIB0 K9F1208X0B-XCB0 K9F1208X0B-XIB0 VCC VCCQ Temperature Under Bias Storage Temperature Short Circuit Current TBIAS TSTG Ios Rating 1.8V DEVICE -0.6 to + 2.45 -0.2 to + 2.45 -0.2 to + 2.45 -10 to +125 -40 to +125 -65 to +150 5
Preliminary FLASH MEMORY
3.3V/2.7V DEVICE -0.6 to + 4.6 -0.6 to + 4.6 -0.6 to + 4.6
Unit
V
C C mA
NOTE : 1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns. Maximum DC voltage on input/output pins is VCC,+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns. 2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F1208X0B-XCB0 :TA=0 to 70C, K9F1208X0B-XIB0:TA=-40 to 85C) Parameter Supply Voltage Supply Voltage Supply Voltage Symbol VCC VCCQ VSS K9F1208R0B(1.8V) Min 1.65 1.65 0 Typ. 1.8 1.8 0 Max 1.95 1.95 0 K9F1208B0B(2.7V) Min 2.5 2.5 0 Typ. 2.7 2.7 0 Max 2.9 2.9 0 K9F1208U0B(3.3V) Min 2.7 2.7 0 Typ. 3.3 3.3 0 Max 3.6 3.6 0 Unit V V V
11
K9F1208R0B K9F1208B0B K9F1208U0B
Preliminary FLASH MEMORY
K9F1208X0B Unit 3.3V Max Min Typ Max
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)
Parameter Symbol Test Conditions Min tRC=50ns (K9F1208R0B : 60ns), CE=VIL IOUT=0mA CE=VIH, WP=0V/VCC CE=VCC-0.2, WP=0V/VCC VIN=0 to Vcc(max) VOUT=0 to Vcc(max) I/O pins Input High Voltage VIH* Except I/O pins Input Low Voltage, All inputs Output High Voltage Level VIL* K9F1208R0B :IOH=-100A VOH K9F1208B0B :IOH=-100A K9F1208U0B :IOH=-400A K9F1208R0B :IOL=100uA Output Low Voltage Level VOL K9F1208B0B :IOL=100A K9F1208U0B :IOL=2.1mA K9F1208R0B :VOL=0.1V Output Low Current(R/B) IOL(R/B) K9F1208B0B :VOL=0.1V K9F1208U0B :VOL=0.4V
NOTE : VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.
1.8V Typ Max Min
2.7V Typ
Operating Current
Sequential Read
ICC1
-
8
15
-
10
20
-
10
20 mA
Program Erase Stand-by Current(TTL) Stand-by Current(CMOS) Input Leakage Current Output Leakage Current
ICC2 ICC3 ISB1 ISB2 ILI ILO
VCCQ -0.4 VCC -0.4 -0.3 VCCQ -0.1
8 8 10 -
15 15 1 50 10 10 +0.3 VCC +0.3 0.4
-0.4 VCC -0.4 -0.3 VCCQ -0.4
10 10 10 -
20 20 1 50 10 10 VCCQ +0.3 VCC +0.3 0.5
2.0 2.0 -0.3
10 10 10 -
20 20 1 50 10 10 VCCQ +0.3 VCC +0.3 0.8
A
VCCQ VCCQ
V 2.4 -
-
-
0.1
-
-
0.4
-
-
0.4
3
4
-
3
4
-
8
10
-
mA
12
K9F1208R0B K9F1208B0B K9F1208U0B
VALID BLOCK
Parameter Valid Block Number Symbol NVB Min 4,026 Typ. -
Preliminary FLASH MEMORY
Max 4,096 Unit Blocks
NOTE : 1. The device may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase or program factory-marked bad blocks. Refer to the attached technical notes for a appropriate management of invalid blocks. 2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block, does not require Error Correction up to 1K program/erase cycles. 3. Minimum 1004 valid blocks are guaranteed for each contiguous 128Mb memory space.
AC TEST CONDITION
(K9F1208X0B-XCB0 :TA=0 to 70C, K9F1208X0B-XIB0:TA=-40 to 85C K9F1208R0B : Vcc=1.65V~1.95V , K9F1208B0B : Vcc=2.5V~2.9V , K9F1208U0B : Vcc=2.7V~3.6V unless otherwise noted) Parameter Input Pulse Levels Input Rise and Fall Times Input and Output Timing Levels K9F1208R0B:Output Load (VccQ:1.8V +/-10%) K9F1208B0B:Output Load (VccQ:2.7V +/-10%) K9F1208U0B:Output Load (VccQ:3.0V +/-10%) K9F1208U0B:Output Load (VccQ:3.3V +/-10%) K9F1208R0B 0V to VccQ 5ns VccQ/2 K9F1208B0B 0V to VccQ 5ns VccQ/2 K9F1208U0B 0.4V to 2.4V 5ns 1.5V
1 TTL GATE and CL=30pF 1 TTL GATE and CL=30pF 1 TTL GATE and CL=50pF 1 TTL GATE and CL=100pF
CAPACITANCE(TA=25C, VCC=1.8V/2.7V/3.3V, f=1.0MHz)
Item Input/Output Capacitance Input Capacitance Symbol CI/O CIN Test Condition VIL=0V VIN=0V Min Max 10 10 Unit pF pF
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
CLE H L H L L L L X X X X X ALE L H L H L L L X X X X(1) X CE L L L L L L L X X X X H H H X X X X X H H X X X X WE RE H H H H H WP X X H H H X X X H H L 0V/VCC
(2)
Mode Read Mode Write Mode Data Input Data Output During Read(Busy) on K9F1208X0B-Y,P or K9F1208U0B-V,F During Read(Busy) on the devices except K9F1208X0B-Y,P and K9F1208U0B-V,F During Program(Busy) During Erase(Busy) Write Protect Stand-by Command Input Address Input(4clock) Command Input Address Input(4clock)
NOTE : 1. X can be VIL or VIH. 2. WP should be biased to CMOS high or CMOS low for standby.
13
K9F1208R0B K9F1208B0B K9F1208U0B
PROGRAM / ERASE CHARACTERISTICS
Parameter Program Time Dummy Busy Time for Multi Plane Program Number of Partial Program Cycles in the Same Page Block Erase Time Main Array Spare Array Symbol tPROG
(1)
Preliminary FLASH MEMORY
Min Typ 200 1 2 Max 500 10 1 2 3 Unit s s cycle cycles ms
tDBSY Nop tBERS
NOTE : 1.Typical program time is defined as the time within more than 50% of the whole pages are programmed at Vcc of 3.3V and 25'C
AC TIMING CHARACTERISTICS FOR COMMAND / ADDRESS / DATA INPUT
Parameter CLE setup Time CLE Hold Time CE setup Time CE Hold Time WE Pulse Width ALE setup Time ALE Hold Time Data setup Time Data Hold Time Write Cycle Time WE High Hold Time Symbol tCLS tCLH tCS tCH tWP
(1)
Min 1.8V 0 10 0 10 40 0 10 20 10 60 20 2.7V 0 10 0 10 25 0 10 20 10 45 15 3.3V 0 10 0 10 25 0 10 20 10 45 15 1.8V -
Max 2.7V 3.3V -
Unit ns ns ns ns ns ns ns ns ns ns ns
tALS tALH tDS tDH tWC tWH
NOTE: 1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns. 2. TBD means "To Be Determinded".
14
K9F1208R0B K9F1208B0B K9F1208U0B
AC CHARACTERISTICS FOR OPERATION
Parameter Data Transfer from Cell to Register ALE to RE Delay CLE to RE Delay Ready to RE Low RE Pulse Width WE High to Busy Read Cycle Time RE Access Time CE Access Time RE High to Output Hi-Z CE High to Output Hi-Z RE or CE High to Output hold RE High Hold Time Output Hi-Z to RE Low WE High to RE Low Device resetting time(Read/Program/Erase) Symbol tR tAR tCLR tRR tRP tWB tRC tREA tCEA tRHZ tCHZ tOH tREH tIR tWHR tRST Min
1.8V 2.7V 3.3V 1.8V
Preliminary FLASH MEMORY
Max
2.7V 3.3V
Unit s ns ns ns ns ns ns ns ns ns ns ns ns ns ns s
10 10 20 40 60 15 20 0 60 -
10 10 20 25 50 15 15 0 60 -
10 10 20 25 50 15 15 0 60
-
15 100 40 55 30 20 -
15 100 30 45 30 20 -
15 100 30 45 30 20 -
5/10/500(1) 5/10/500(1) 5/10/500(1)
Parameter K9F1208X0BY,V,P,F only Last RE High to Busy(at sequential read) CE High to Ready(in case of interception by CE at read) CE High Hold Time(at the last serial read)
(2)
Symbol tRB tCRY tCEH
Min 100
Max 100 50 +tr(R/B) (3)
Unit ns ns ns
NOTE: 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us. 2. To break the sequential read cycle, CE must be held high for longer time than tCEH. 3. The time to Ready depends on the value of the pull-up resistor tied R/B pin.ting time. 4. TBD means "To Be Determinded".
15
K9F1208R0B K9F1208B0B K9F1208U0B
NAND Flash Technical Notes
Initial Invalid Block(s)
Preliminary FLASH MEMORY
Initial invalid blocks are defined as blocks that contain one or more initial invalid bits whose reliability is not guaranteed by Samsung. The information regarding the initial invalid block(s) is so called as the initial invalid block information. Devices with initial invalid block(s) have the same quality level as devices with all valid blocks and have the same AC and DC characteristics. An initial invalid block(s) does not affect the performance of valid block(s) because it is isolated from the bit line and the common source line by a select transistor. The system design must be able to mask out the initial invalid block(s) via address mapping. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block, does not require Error Correction up to 1K program/erase cycles.
Identifying Initial Invalid Block(s)
All device locations are erased(FFh) except locations where the initial invalid block(s) information is written prior to shipping. The initial invalid block(s) status is defined by the 6th byte in the spare area. Samsung makes sure that either the 1st or 2nd page of every initial invalid block has non-FFh data at the column address of 517. Since the initial invalid block information is also erasable in most cases, it is impossible to recover the information once it has been erased. Therefore, the system must be able to recognize the initial invalid block(s) based on the initial invalid block information and create the initial invalid block table via the following suggested flow chart(Figure 4). Any intentional erasure of the initial invalid block information is prohibited.
Start
Set Block Address = 0
Increment Block Address
*
Check "FFh" ?
Check "FFh" at the column address 517 of the 1st and 2nd page in the block
No Create (or update) Initial Invalid Block(s) Table
Yes No
Last Block ?
Yes
End
Figure 4. Flow chart to create initial invalid block table.
16
K9F1208R0B K9F1208B0B K9F1208U0B
NAND Flash Technical Notes (Continued)
Error in write or read operation
Preliminary FLASH MEMORY
Within its life time, the additional invalid blocks may develop with NAND Flash memory. Refer to the qualification report for the block failure rete.The following possible failure modes should be considered to implement a highly reliable system. In the case of status read failure after erase or program, block replacement should be done. Because program status fail during a page program does not affect the data of the other pages in the same block, block replacement can be executed with a page-sized buffer by finding an erased empty block and reprogramming the current target data and copying the rest of the replaced block. In case of Read, ECC must be employed. To improve the efficiency of memory space, it is recommended that the read failure due to single bit error should be reclaimed by ECC without any block replacement. The block failure rate in thequalification report does not include those reclaimed blocks. Failure Mode Write Read Erase Failure Program Failure Single Bit Failure Detection and Countermeasure sequence Status Read after Erase --> Block Replacement Status Read after Program --> Block Replacement Verify ECC -> ECC Correction
ECC
: Error Correcting Code --> Hamming Code etc. Example) 1bit correction & 2bit detection
Program Flow Chart
Start
Write 80h
Write Address
Write Data
Write 10h
Read Status Register
I/O 6 = 1 ? or R/B = 1 ? Yes No I/O 0 = 0 ?
No
Program Error
*
Yes Program Completed
*
: If program operation results in an error, map out the block including the page in error and copy the target data to another block.
17
K9F1208R0B K9F1208B0B K9F1208U0B
NAND Flash Technical Notes (Continued)
Erase Flow Chart
Start Write 60h Write Block Address Write D0h Read Status Register
Preliminary FLASH MEMORY
Read Flow Chart
Start Write 00h Write Address Read Data ECC Generation
I/O 6 = 1 ? or R/B = 1 ? Yes No I/O 0 = 0 ? Yes Erase Completed
No
Reclaim the Error
No
Verify ECC Yes Page Read Completed
Erase Error
*
*
: If erase operation results in an error, map out the failing block and replace it with another block.
Block Replacement
1st (n-1)th nth (page)
{ {
Block A 2 an error occurs. Buffer memory of the controller. Block B 1
1st (n-1)th nth (page)
* Step1 When an error happens in the nth page of the Block 'A' during erase or program operation. * Step2 Copy the nth page data of the Block 'A' in the buffer memory to the nth page of another free block. (Block 'B') * Step3 Then, copy the data in the 1st ~ (n-1)th page to the same location of the Block 'B'. * Step4 Do not further erase Block 'A' by creating an 'invalid Block' table or other appropriate scheme.

18
K9F1208R0B K9F1208B0B K9F1208U0B
Pointer Operation of K9F1208X0B
Preliminary FLASH MEMORY
Samsung NAND Flash has three address pointer commands as a substitute for the two most significant column addresses. '00h' command sets the pointer to 'A' area(0~255byte), '01h' command sets the pointer to 'B' area(256~511byte), and '50h' command sets the pointer to 'C' area(512~527byte). With these commands, the starting column address can be set to any of a whole page(0~527byte). '00h' or '50h' is sustained until another address pointer command is inputted. '01h' command, however, is effective only for one operation. After any operation of Read, Program, Erase, Reset, Power_Up is executed once with '01h' command, the address pointer returns to 'A' area by itself. To program data starting from 'A' or 'C' area, '00h' or '50h' command must be inputted before '80h' command is written. A complete read operation prior to '80h' command is not necessary. To program data starting from 'B' area, '01h' command must be inputted right before '80h' command is written.
Table 2. Destination of the pointer
Command 00h 01h 50h Pointer position 0 ~ 255 byte 256 ~ 511 byte 512 ~ 527 byte Area 1st half array(A) 2nd half array(B) spare array(C)
"A" area (00h plane) 256 Byte "B" area (01h plane) 256 Byte "C" area (50h plane) 16 Byte
"A"
"B"
"C" Internal Page Register
Pointer select commnad (00h, 01h, 50h)
Pointer
Figure 5. Block Diagram of Pointer Operation
(1) Command input sequence for programming 'A' area
The address pointer is set to 'A' area(0~255), and sustained Address / Data input 00h 80h 10h 00h 80h Address / Data input 10h
'A','B','C' area can be programmed. It depends on how many data are inputted.
'00h' command can be omitted.
(2) Command input sequence for programming 'B' area
The address pointer is set to 'B' area(256~511), and will be reset to 'A' area after every program operation is executed. Address / Data input 01h 80h 10h 01h 80h Address / Data input 10h
'B', 'C' area can be programmed. It depends on how many data are inputted.
'01h' command must be rewritten before every program operation
(3) Command input sequence for programming 'C' area
The address pointer is set to 'C' area(512~527), and sustained Address / Data input 50h 80h 10h 50h 80h Address / Data input 10h
Only 'C' area can be programmed.
'50h' command can be omitted.
19
K9F1208R0B K9F1208B0B K9F1208U0B
System Interface Using CE don't-care.
Preliminary FLASH MEMORY
For an easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal 528byte page registers are utilized as separate buffers for this operation and the system design gets more flexible. In addition, for voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and reading would provide significant savings in power consumption.
Figure 7. Program Operation with CE don't-care.
CLE
CE don't-care
CE
WE ALE
80h Start Add.(4Cycle)
I/OX
Data Input
Data Input
10h
tCS CE
tCH CE
tCEA
tWP WE
RE
tREA
I/OX
out
Figure 8. Read Operation with CE don't-care.
CLE CE
On K9F1208X0B-Y,P or K9F1208X0B-V,F CE must be held low during tR
CE don't-care
RE ALE R/B tR
WE I/OX
00h Start Add.(4Cycle) Data Output(sequential)
20
K9F1208R0B K9F1208B0B K9F1208U0B
Device K9F1208X0B I/O I/Ox I/O 0 ~ I/O 7
Preliminary FLASH MEMORY
DATA Data In/Out ~528byte
Command Latch Cycle
CLE tCLS tCS CE tCLH tCH
WE
tWP
tALS ALE tDS I/OX
tALH
tDH
Command
Address Latch Cycle
tCLS CLE
tCS CE
tWC
tWC
tWC
tWP WE tALS ALE tDS I/OX tDH tWH tALH tALS
tWP tWH tALH tALS
tWP tWH tALH tALS
tWP tALH
tDS
tDH
tDS
tDH
tDS
A25
tDH
A0~A7
A9~A16
A17~A24
21
K9F1208R0B K9F1208B0B K9F1208U0B
Input Data Latch Cycle
tCLH CLE
Preliminary FLASH MEMORY
tCH CE
tALS ALE
tWC
WE tDS I/Ox
tWH tDH
tDS
tDH
tWP
tWP
tWP tDH
tDS
DIN 0 DIN 1 DIN n tRC
Serial access Cycle after Read(CLE=L, WE=H, ALE=L)
CE tREA RE
tREH
tCHZ* tREA tOH
tREA
tRHZ* I/Ox tRR R/B Dout Dout
tRHZ* tOH Dout
NOTES : Transition is measured 200mV from steady state voltage with load. This parameter is sampled and not 100% tested.
22
K9F1208R0B K9F1208B0B K9F1208U0B
Status Read Cycle
tCLR CLE tCLS tCS CE tCH tCEA tWHR RE tDS I/OX 70h tDH tIR tREA tCLH
Preliminary FLASH MEMORY
tWP WE
tCHZ tOH
tRHZ tOH Status Output
READ1 OPERATION (READ ONE PAGE)
CLE 1) CE tWC WE tWB ALE
On K9F1208X0B-Y,P or K9F1208X0B-V,F CE must be held low during tR
tCEH tCHZ tOH
tAR tRHZ tOH
tCRY
tR RE N Address tRR I/OX
00h or 01h A0 ~ A7 A9 ~ A16 A17 ~ A24 A25 Dout N
tRC
Dout N+1 Dout N+2
Dout m
1)
Column Address
Page(Row) Address Busy
tRB
X8 device : m = 528 , Read CMD = 00h or 01h
NOTES : 1) is only valid on K9F1208X0B-Y,P or K9F1208X0B-V,F
R/B
1)
23
K9F1208R0B K9F1208B0B K9F1208U0B
Read1 Operation (Intercepted by CE)
CLE
Preliminary FLASH MEMORY
CE
WE tWB ALE
On K9F1208X0B-Y,P or K9F1208X0B-V,F CE must be held low during tR
tAR
tCHZ tOH tRC
tR RE tRR I/OX
00h or 01h
A0 ~ A7
A9 ~ A16
A17 ~ A24
A25
Dout N
Dout N+1
Dout N+2
Column Address
Page(Row) Address Busy
Read2 Operation (Read One Page)
CLE
On K9F1208X0B-Y,P or K9F1208X0B-V,F CE must be held low during tR
CE
WE tWB ALE
R/B
tR tAR tRR
RE
I/OX
50h
A0 ~ A7
A9 ~ A16 A17 ~ A24
A25
Dout n+M
n+m
R/B M Address
A0~A3 : Valid Address A4~A7 : Dont care
Selected Row
512
16 Start address M
24
K9F1208R0B K9F1208B0B K9F1208U0B
Sequential Row Read Operation (Within a Block)
CLE
Preliminary FLASH MEMORY
WE
ALE
CE
RE
I/OX
00h
A0 ~ A7 A9 ~ A16 A17 ~ A24
A25
Dout N
Dout N+1
Dout 527
Dout 0
Dout 1
Dout 527
M
M+1
R/B
Busy
Busy
Output 70h Read Status Command I/O0 I/O0=0 Successful Program I/O0=1 Error in Program
Ready
N
Output
Page Program Operation
CLE
CE
WE tWB ALE tPROG
RE
Din Din 10h N 527 1 up to 528 Byte Data Program Command Serial Input
I/OX
80h
A0 ~ A7 A9 ~ A16 A17 ~ A24 Page(Row) Address
A25
Sequential Data Column Input Command Address
25
R/B
tWC
tWC
tWC
K9F1208R0B K9F1208B0B K9F1208U0B
BLOCK ERASE OPERATION (ERASE ONE BLOCK)
Preliminary FLASH MEMORY
CLE
CE tWC WE tWB ALE tBERS
RE
I/OX
60h
A9 ~ A16 A17 ~ A24 Page(Row) Address
A25
DOh
70h
I/O 0
R/B
Auto Block Erase Setup Command Erase Command
Busy
Read Status Command I/O0=0 Successful Erase I/O0=1 Error in Erase
26
Multi-Plane Page Program Operation
K9F1208R0B K9F1208B0B K9F1208U0B
tWC
WE
tWB tDBSY tWB
tPROG
RE
ALE
CE
CLE
I/OX
A25 80h A0 ~ A7 A9 ~ A16 A17 ~ A24
80h
A0 ~ A7 A9 ~ A16 A17 ~ A24
Din N
Din m
Din N A25
Din 527
71h 10h Program Confirm Command (True)
I/O
Max. three times repeatable
Last Plane Input & Program
tDBSY :
typ. 1us max. 10us
Ex.) Four-Plane Page Program tDBSY tDBSY tDBSY tPROG
R/B
80h A0 ~ A7 & A9 ~ A25 528 Byte Data Address & Data Input 11h 80h
27
Page(Row) Address Address & Data Input A0 ~ A7 & A9 ~ A25 528 Byte Data 11h 80h
Sequential Data Input Command
Column Address
11h Program 1 up to 528 Byte Data Command (Dummy) Serial Input
Read Multi-Plane Status Command
R/B
I/O0~7
Address & Data Input A0 ~ A7 & A9 ~ A25 528 Byte Data
11h
80h
Address & Data Input A0 ~ A7 & A9 ~ A25 528 Byte Data
Preliminary FLASH MEMORY
10h
71h
K9F1208R0B K9F1208B0B K9F1208U0B
Multi-Plane Block Erase Operation
Preliminary FLASH MEMORY
CLE
CE tWC WE tWB ALE tBERS
RE
I/OX
60h
A9 ~ A16 A17 ~ A24 Page(Row) Address
A25
DOh
71h
I/O 0
R/B
Block Erase Setup Command Erase Confirm Command
Busy
Read Multi-Plane Status Command
Max. 4 times repeatable
* For Multi-Plane Erase operation, Block address to be erased should be repeated before "D0H" command.
Ex.) Four-Plane Block Erase Operation R/B I/O0~7
60h Address A9 ~ A25 60h A9 ~ A25 60h A9 ~ A25 60h A9 ~ A25 D0h
tBERS
71h
28
K9F1208R0B K9F1208B0B K9F1208U0B
Read ID Operation
Preliminary FLASH MEMORY
CLE
CE
WE
ALE
RE tREA I/OX
90h Read ID Command 00h Address. 1cycle ECh Maker Code Device Code A5h C0h Multi Plane Code
Device K9F1208R0B K9F1208B0B K9F1208U0B
Device Code 36h 76h 76h
ID Defintition Table 90 ID : Access command = 90H
Description 1st Byte 2nd Byte 3rd Byte 4th Byte Maker Code Device Code Must be don't -cared Supports Multi Plane Operation (Must be don't-cared for 1.8 device)
29
K9F1208R0B K9F1208B0B K9F1208U0B
Copy-Back Program Operation
Preliminary FLASH MEMORY
CE tWC WE tWB
On K9F1208X0B-Y,P or K9F1208X0B-V,F CE must be held low during tR
tWB tPROG
tR RE
ALE
I/OX
00h
A0~A7 A9~A16 A17~A24 Column Address Page(Row) Address
A25
8Ah
A0~A7 A9~A16 A17~A24 Column Address Page(Row) Address
A25
10h
70h

CLE
I/O0
Read Status Command
Copy-Back Data Input Command
I/O0=0 Successful Program I/O0=1 Error in Program
30
R/B
Busy
Busy
K9F1208R0B K9F1208B0B K9F1208U0B
Device Operation
PAGE READ
Preliminary FLASH MEMORY
Upon initial device power up, the device defaults to Read1 mode. This operation is also initiated by writing 00h to the command register along with four address cycles. Once the command is latched, it does not need to be written for the following page read operation. Three types of operations are available : random read, serial page read and sequential row read. The random read mode is enabled when the page address is changed. The 528 bytes of data within the selected page are transferred to the data registers in less than 15s(tR). The system controller can detect the completion of this data transfer(tR) by analyzing the output of R/B pin. CE must be held low while in busy for K9F1208U0B-YXB0 or K9F1208U0B-VXB0, while CE is don't-care with K9F1208X0B-GXB0 or K9F1208X0B-JXB0. If CE goes high before the device returns to Ready, the random read operation is interrupted and Busy returns to Ready as the defined by tCRY. Since the operation was aborted, the serial page read does not output valid data. Once the data in a page is loaded into the registers, they may be read out in 50ns(K9F1208R0B : 60ns) cycle time by sequentially pulsing RE. High to low transitions of the RE clock output the data stating from the selected column address up to the last column address. The way the Read1 and Read2 commands work is like a pointer set to either the main area or the spare area. The spare area of 512 to 527 bytes may be selectively accessed by writing the Read2 command. Addresses A0 to A3 set the starting address of the spare area while addresses A4 to A7 are ignored. The Read1 command(00h/01h) is needed to move the pointer back to the main area. Figures 7 to 10 show typical sequence and timings for each read operation. Sequential Row Read is available only on K9F1208X0B-Y,P or K9F1208U0B-V,F : After the data of last column address is clocked out, the next page is automatically selected for sequential row read. Waiting 15s again allows reading the selected page. The sequential row read operation is terminated by bringing CE high. Unless the operation is aborted, the page address is automatically incremented for sequential row read as in Read1 operation and spare sixteen bytes of each page may be sequentially read. The Sequential Read 1 and 2 operation is allowed only within a block and after the last page of a block is readout, the sequential read operation must be terminated by bringing CE high. When the page address moves onto the next block, read command and address must be given. Figures 9, 10 show typical sequence and timings for sequential row read operation.
31
K9F1208R0B K9F1208B0B K9F1208U0B
Figure 7. Read1 Operation
CLE CE WE ALE R/B RE I/O0~7
00h Start Add.(4Cycle) A0 ~ A7 & A9 ~ A25 (00h Command) Main array
Preliminary FLASH MEMORY
On K9F1208U0B-Y,P or K9F1208U0B-V,F CE must be held low during tR
tR
Data Output(Sequential) (01h Command) 1st half array 2st half array
1)
Data Field
Spare Field
Data Field
Spare Field
NOTE: 1) After data access on 2nd half array by 01h command, the start pointer is automatically moved to 1st half array (00h) at next cycle.
32
K9F1208R0B K9F1208B0B K9F1208U0B
Figure 8. Read2 Operation
CLE CE WE ALE R/B RE I/OX
50h Start Add.(4Cycle) A0 ~ A7 & A9 ~ A25
Preliminary FLASH MEMORY
On K9F1208U0B-Y,P or K9F1208U0B-V,F CE must be held low during tR
tR
Data Output(Sequential) Spare Field
Main array
Data Field
Spare Field
Figure 9. Sequential Row Read1 Operation (only for K9F1208X0B-Y,P
R/B I/OX
00h 01h Start Add.(4Cycle) A0 ~ A7 & A9 ~ A25 ( 00h Command)
1st half array 2nd half array
and K9F1208X0B-V,F valid within a block)
tR
tR
tR
Data Output 1st
Data Output 2nd (528 Byte) ( 01h Command)
1st half array 2nd half array
Data Output Nth (528 Byte)
Block
1st 2nd Nth
1st 2nd Nth
Data Field
Spare Field
Data Field
Spare Field
The Sequential Read 1 and 2 operation is allowed only within a block and after the last page of a block is readout, the sequential read operation must be terminated by bringing CE high. When the page address moves onto the next block, read command and address must be given.
33
K9F1208R0B K9F1208B0B K9F1208U0B
Preliminary FLASH MEMORY
Figure 10. Sequential Row Read2 Operation (only for K9F1208U0B-Y,P and K9F1208U0B-V,F valid within a block)
R/B I/OX
50h Start Add.(4Cycle) A0 ~ A3 & A9 ~ A25 (A4 ~ A7 : Don't Care)
tR
tR
tR
Data Output 1st
Data Output 2nd (16Byte)
Data Output Nth (16Byte)
1st Block Nth
Data Field
Spare Field
PAGE PROGRAM
The device is programmed basically on a page basis, but it does allow multiple partial page programing of a byte or consecutive bytes up to 528 bytes, in a single page program cycle. The number of consecutive partial page programming operation within the same page without an intervening erase operation must not exceed 1 for main array and 2 for spare array. The addressing may be done in any random order in a block. A page program cycle consists of a serial data loading period in which up to 528 bytes of data may be loaded into the page register, followed by a non-volatile programming period where the loaded data is programmed into the appropriate cell. Serial data loading can be started from 2nd half array by moving pointer. About the pointer operation, please refer to the attached technical notes. The serial data loading period begins by inputting the Serial Data Input command(80h), followed by the four cycle address input and then serial data loading. The bytes other than those to be programmed do not need to be loaded.The Page Program confirm command(10h) initiates the programming process. Writing 10h alone without previously entering the serial data will not initiate the programming process. The internal write state control automatically executes the algorithms and timings necessary for program and verify, thereby freeing the system controller for other tasks. Once the program process starts, the Read Status Register command may be entered, with RE and CE low, to read the status register. The system controller can detect the completion of a program cycle by monitoring the R/B output, or the Status bit(I/O 6) of the Status Register. Only the Read Status command and Reset command are valid while programming is in progress. When the Page Program is complete, the Write Status Bit(I/O 0) may be checked(Figure 11). The internal write verify detects only errors for "1"s that are not successfully programmed to "0"s. The command register remains in Read Status command mode until another valid command is written to the command register.
Figure 11. Program & Read Status Operation
R/B I/O0~7
80h Address & Data Input A0 ~ A7 & A9 ~ A25 528 Byte Data
tPROG
10h
70h
I/O0
Pass
Fail
34
K9F1208R0B K9F1208B0B K9F1208U0B
BLOCK ERASE
Preliminary FLASH MEMORY
The Erase operation is done on a block(16K Byte) basis. Block address loading is accomplished in three cycles initiated by an Erase Setup command(60h). Only address A14 to A25 is valid while A9 to A13 is ignored. The Erase Confirm command(D0h) following the block address loading initiates the internal erasing process. This two-step sequence of setup followed by execution command ensures that memory contents are not accidentally erased due to external noise conditions. At the rising edge of WE after the erase confirm command input, the internal write controller handles erase and erase-verify. When the erase operation is completed, the Write Status Bit(I/O 0) may be checked. Figure 12 details the sequence.
Figure 12. Block Erase Operation
R/B I/OX
60h
tBERS
Address Input(3Cycle) Block Add. : A14 ~ A25
D0h
70h
I/O0
Pass
Fail
Multi-Plane Page Program
Multi-Plane Page Program is an extension of Page Program, which is executed for a single plane with 528 byte page registers. Since the device is equipped with four memory planes, activating the four sets of 528 byte page registers enables a simultaneous programming of four pages. Partial activation of four planes is also permitted. After writing the first set of data up to 528 byte into the selected page register, Dummy Page Program command (11h) instead of actual Page Program (10h) is inputted to finish data-loading of the current plane and move to the next plane. Since no programming process is involved, R/B remains in Busy state for a short period of time(tDBSY). Read Status command (standard 70h or alternate 71h) may be issued to find out when the device returns to Ready state by polling the Ready/Busy status bit(I/O 6). Then the next set of data for one of the other planes is inputted with the same command and address sequences. After inputting data for the last plane, actual True Page Program (10h) instead of dummy Page Program command (11h) must be followed to start the programming process. The operation of R/B and Read Status is the same as that of Page Program. Since maximum four pages are programmed simultaneously, pass/fail status is available for each page when the program operation completes. The extended status bits (I/O1 through I/O 4) are checked by inputting the Read Multi-Plane Status Register. Status bit of I/O 0 is set to "1" when any of the pages fails. Multi-Plane page Program with "01h" pointer is not supported, thus prohibited.
Figure 13. Four-Plane Page Program
R/B I/OX
80h
tDBSY
tDBSY
tDBSY
tPROG
528 bytes
Address & 11h Data Input A0 ~ A7 & A9 ~ A25
80h
Address & Data Input
11h
80h
Address & Data Input
11h
80h
Address & Data Input
10h
71h
Data Input
80h
11h
80h
11h
80h
11h
80h
10h
Plane 0 (1024 Block)
Plane 1 (1024 Block)
Plane 2 (1024 Block)
Plane 3 (1024 Block)
Block 0 Block 4
Block 1 Block 5
Block 2 Block 6
Block 3 Block 7
Block 4088 Block 4092
Block 4089 Block 4093
Block 4090 Block 4094
Block 4091 Block 4095
35
K9F1208R0B K9F1208B0B K9F1208U0B
Restriction in addressing with Multi Plane Page Program
Preliminary FLASH MEMORY
While any block in each plane may be addressable for Multi-Plane Page Program, the five least significant addresses(A9-A13) for the selected pages at one operation must be the same. Figure 14 shows an example where 2nd page of each addressed block is selected for four planes. However, any arbitrary sequence is allowed in addressing multiple planes as shown in Figure15.
Figure 14. Multi-Plane Program & Read Status Operation
Plane 0 (1024 Block) Plane 1 (1024 Block) Plane 2 (1024 Block) Plane 3 (1024 Block)
Block 0 Page 0 Page 1
Block 1 Page 0 Page 1
Block 2 Page 0 Page 1
Block 3 Page 0 Page 1
Page 30 Page 31
Page 30 Page 31
Page 30 Page 31
Page 30 Page 31
Figure 15. Addressing Multiple Planes
80h
Plane 2
11h
80h
Plane 0
11h
80h
Plane3
11h
80h
Plane 1
10h
Figure 16. Multi-Plane Page Program & Read Status Operation
R/B I/O0~7
80h
tPROG
Last Plane input Address & Data Input A0 ~ A7 & A9 ~ A25 10h 71h I/O Pass
528 bytes
Fail
Multi-Plane Block Erase
Basic concept of Multi-Plane Block Erase operation is identical to that of Multi-Plane Page Program. Up to four blocks, one from each plane can be simultaneously erased. Standard Block Erase command sequences (Block Erase Setup command followed by three address cycles) may be repeated up to four times for erasing up to four blocks. Only one block should be selected from each plane. The Erase Confirm command initiates the actual erasing process. The completion is detected by analyzing R/B pin or Ready/Busy status (I/O 6). Upon the erase completion, pass/fail status of each block is examined by reading extended pass/fail status(I/O 1 through I/O 4).
Figure 17. Four Block Erase Operation
R/B I/OX
60h Address (3 Cycle) 60h Address (3 Cycle) 60h Address (3 Cycle) 60h Address (3 Cycle) D0h
tBERS
71h I/O Pass
A0 ~ A7 & A9 ~ A25 Fail
36
K9F1208R0B K9F1208B0B K9F1208U0B
Copy-Back Program
Preliminary FLASH MEMORY
The copy-back program is configured to quickly and efficiently rewrite data stored in one page within the plane to another page within the same plane without utilizing an external memory. Since the time-consuming sequently-reading and its re-loading cycles are removed, the system performance is improved. The benefit is especially obvious when a portion of a block is updated and the rest of the block also need to be copied to the newly assigned free block. The operation for performing a copy-back program is a sequential execution of page-read without burst-reading cycle and copying-program with the address of destination page. A normal read operation with "00h" command and the address of the source page moves the whole 528byte data into the internal page registers. As soon as the device returns to Ready state, Page-Copy Data-input command (8Ah) with the address cycles of destination page followed may be written. The Program Confirm command (10h) is required to actually begin the programming operation. Copy-Back Program operation is allowed only within the same memory plane. Once the Copy-Back Program is finished, any additional partial page programming into the copied pages is prohibited before erase. A14 and A15 must be the same between source and target page. Figure18 shows the command sequence for single plane operation. "When there is a program-failure at Copy-Back operation, error is reported by pass/fail status. But if the soure page has a bit error for charge loss, accumulated copy-back operations could also accumulate bit errors. For this reason, two bit ECC is recommended for copy-back operation."
Figure 18. One Page Copy-Back program Operation
R/B I/OX
00h Add.(4Cycles) A0 ~ A7 & A9 ~ A25 Source Address
tR
tPROG
8Ah
Add.(4Cycles) A0 ~ A7 & A9 ~ A25 Destination Address
10h
70h
I/O0
Pass
Fail
37
K9F1208R0B K9F1208B0B K9F1208U0B
Multi-Plane Copy-Back Program
Preliminary FLASH MEMORY
Multi-Plane Copy-Back Program is an extension of one page Copy-Back Program into four plane operation. Since the device is equipped with four memory planes, activating the four sets of 528 bytes page registers enables a simultaneous Multi-Plane CopyBack programming of four pages. Partial activation of four planes is also permitted. First, normal read operation with the "00h"command and address of the source page moves the whole 528 byte data into internal page buffers. Any further read operation for transferring the addressed pages to the corresponding page register must be executed with "03h" command instead of "00h" command. Any plane may be selected without regard to "00h" or "03h". Up to four planes may be addressed. Data moved into the internal page registers are loaded into the destination plane addresses. After the input of command sequences for reading the source pages, the same procedure as Multi-Plane Page programming except for a replacement address command with "8Ah" is executed. Since no programming process is involved during data loading at the destination plane address , R/B remains in Busy state for a short period of time(tDBSY). Read Status command (standard 70h or alternate 71h) may be issued to find out when the device returns to Ready state by polling the Ready/Busy status bit(I/O 6). After inputting data for the last plane, actual True Page Program (10h) instead of dummy Page Program command (11h) must be followed to start the programming process. The operation of R/B and Read Status is the same as that of Page Program. Since maximum four pages are programmed simultaneously, pass/fail status is available for each page when the program operation completes. No pointer operation is supported with Multi-Plane Copy-Back Program. Once the Multi-Plane Copy-Back Program is finished, any additional partial page programming into the copied pages is prohibited before erase once the Multi-Plane Copy-Back Program is finished.
Figure 19. Four-Plane Copy-Back Program
Max Three Times Repeatable
Source Address Input
00h
03h
03h
03h
Plane 0 (1024 Block)
Plane 1 (1024 Block)
Plane 2 (1024 Block)
Plane 3 (1024 Block)
Block 0 Block 4
Block 1 Block 5
Block 2 Block 6
Block 3 Block 7
Block 4088 Block 4092
Block 4089 Block 4093
Block 4090 Block 4094
Block 4091 Block 4095
Max Three Times Repeatable
Destination Address Input
8Ah
11h
8Ah
11h
8Ah
11h
8Ah
10h
Plane 0 (1024 Block)
Plane 1 (1024 Block)
Plane 2 (1024 Block)
Plane 3 (1024 Block)
Block 0 Block 4
Block 1 Block 5
Block 2 Block 6
Block 3 Block 7
Block 4088 Block 4092
Block 4089 Block 4093
Block 4090 Block 4094
Block 4091 Block 4095
38
K9F1208R0B K9F1208B0B K9F1208U0B
Figure 20. Four-Plane Copy-Back Page Program (Continued)
R/B
I/OX
03h Add.( 4Cyc.) Add.( 4Cyc.) 8Ah 8Ah A0 ~ A7 & A9 ~ A25 Destination Address A0 ~ A7 & A9 ~ A25 Destination Address 11h 03h Add.(4Cyc.) 11h 8Ah Add.(4Cyc.)
00h
Add.(4Cyc.)
tR tDBSY tDBSY
tR
tR
tPROG
Add.(4Cyc.)
10h A0 ~ A7 & A9 ~ A25 Destination Address
71h
A0 ~ A7 & A9 ~ A25 Source Address
A0 ~ A7 & A9 ~ A25 Source Address A0 ~ A7 & A9 ~ A25 Source Address
tR : Normal Read Busy
tDBSY : Typical 1us, Max 10us Max. 4 times (4 Cycle Destination Address Input) repeatable
Max. 4 times ( 4 Cycle Source Address Input) repeatable
39
Preliminary FLASH MEMORY
K9F1208R0B K9F1208B0B K9F1208U0B
READ STATUS
Preliminary FLASH MEMORY
The device contains a Status Register which may be read to find out whether program or erase operation is completed, and whether the program or erase operation is completed successfully. After writing 70h command to the command register, a read cycle outputs the content of the Status Register to the I/O pins on the falling edge of CE or RE, whichever occurs last. This two line control allows the system to poll the progress of each device in multiple memory connections even when R/B pins are common-wired. RE or CE does not need to be toggled for updated status. Refer to table 4 for specific Status Register definitions. The command register remains in Status Read mode until further commands are issued to it. Therefore, if the status register is read during a random read cycle, a read command(00h or 50h) should be given before sequential page read cycle. For Read Status of Multi Plane Program/Erase, the Read Multi-Plane Status command(71h) should be used to find out whether multiplane program or erase operation is completed, and whether the program or erase operation is completed successfully. The pass/fail status data must be checked only in the Ready condition after the completion of Multi-Plane program or erase operation.
Table4. Read Staus Register Definition
I/O No. I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 Status Total Pass/Fail Plane 0 Pass/Fail Plane 1 Pass/Fail Plane 2 Pass/Fail Plane 3 Pass/Fail Reserved Device Operation Write Protect Definition by 70h Command Pass : "0" Must be don't -cared Must be don't -cared Must be don't -cared Must be don't -cared Must be don't -cared Busy : "0" Protected : "0" Ready : "1" Not Protected : "1" Fail : "1" Definition by 71h Command Pass : "0"(1) Pass : "0"(2) Pass : "0" Pass : "0"
(2)
Fail : "1" Fail : "1" Fail : "1" Fail : "1" Fail : "1" Ready : "1" Not Protected : "1"
Pass : "0"(2)
(2)
Must be don't-cared Busy : "0" Protected : "0"
NOTE : 1. I/O 0 describes combined Pass/Fail condition for all planes. If any of the selected multiple pages/blocks fails in Program/
Erase operation, it sets "Fail" flag. 2. The pass/fail status applies only to the corresponding plane.
40
K9F1208R0B K9F1208B0B K9F1208U0B
Read ID
Preliminary FLASH MEMORY
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of 00h. Four read cycles sequentially output the manufacture code(ECh), and the device code, Reserved(A5h), Multi plane operation code(C0h) respectively. A5h must be don't-cared. C0h means that device supports Multi Plane operation but must be don't-cared for 1.8V device. The command register remains in Read ID mode until further commands are issued to it. Figure 21 shows the operation sequence.
Figure 21. Read ID Operation 1
CLE tCEA CE WE tAR ALE RE I/O0~7
90h 00h Address. 1cycle
tWHR tREA
ECh Maker code Device Code Device code A5h C0h Multi-Plane code
Device K9F1208R0B K9F1208B0B K9F1208U0B
Device Code 36h 76h 76h
41
K9F1208R0B K9F1208B0B K9F1208U0B
RESET
Preliminary FLASH MEMORY
The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state during random read, program or erase mode, the reset operation will abort these operations. The contents of memory cells being altered are no longer valid, as the data will be partially programmed or erased. The command register is cleared to wait for the next command, and the Status Register is cleared to value C0h when WP is high. Refer to table 5 for device status after reset operation. If the device is already in reset state a new reset command will not be accepted by the command register. The R/B pin transitions to low for tRST after the Reset command is written. Refer to Figure 22 below.
Figure 22. RESET Operation
R/B I/O0~7
FFh
tRST
Table5. Device Status
After Power-up Operation Mode Read 1 After Reset Waiting for next command
42
K9F1208R0B K9F1208B0B K9F1208U0B
READY/BUSY
Preliminary FLASH MEMORY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random read . The R/B pin is normally high but transitions to low after program or erase command is written to the command register or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin is an opendrain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 23). Its value can be determined by the following guidance.
Rp VCC
ibusy
1.8V device - VOL : 0.1V, VOH : VccQ-0.1V 2.7V device - VOL : 0.4V, VOH : VccQ-0.4V 3.3V device - VOL : 0.4V, VOH : 2.4V Ready Vcc
R/B open drain output
VOH
CL
VOL Busy tf tr
GND Device
Figure 23. Rp vs tr ,tf & Rp vs ibusy
43
K9F1208R0B K9F1208B0B K9F1208U0B
@ Vcc = 1.8V, Ta = 25C , CL = 30pF
Preliminary FLASH MEMORY
tr,tf [s]
300n
1.7
Ibusy
3m
Ibusy [A]
Ibusy [A]
200n 100n
2m tr
0.85 60 90 0.57 1.7 120
30 1.7
0.43 1.7
1m
tf
1.7
1K
2K
3K Rp(ohm)
4K
@ Vcc = 2.7V, Ta = 25C , CL = 30pF
tr,tf [s]
300n
Ibusy
1.1
200n 100n
30 2.3
2m
90 0.75 2.3 120
tr tf
60 2.3
1m
2.3 0.55
1K
2K
3K Rp(ohm)
4K
@ Vcc = 3.3V, Ta = 25C , CL = 100pF
2.4 400
tr,tf [s]
300n
Ibusy
1.2 200 300
3m
200n tr 100n
100 3.6 tf
0.8 0.6
2m 1m
3.6
3.6
3.6
1K
2K
Rp value guidance
Rp(min, 1.8V part) = VCC(Max.) - VOL(Max.) IOL + IL VCC(Max.) - VOL(Max.) IOL + IL VCC(Max.) - VOL(Max.) IOL + IL
3K Rp(ohm) =
4K
1.85V 3mA + IL 2.4V = = 3mA + IL 3.2V 8mA + IL
Rp(min, 2.7V part) = Rp(min, 3.3V part) =
where IL is the sum of the input currents of all devices tied to the R/B pin. Rp(max) is determined by maximum permissible limit of tr
44
Ibusy [A]
2.3
3m
K9F1208R0B K9F1208B0B K9F1208U0B
Data Protection & Power-up sequence
Preliminary FLASH MEMORY
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector disables all functions whenever Vcc is below about 1.1V(1.8V device), 1.8V(2.7V device), 2V(3.3V device). WP pin provides hardware protection and is recommended to be kept at VIL during power-up and power-down. A recovery time of minimum 10s is required before internal circuit gets ready for any command sequences as shown in Figure 24. The two step command sequence for program/erase provides additional software protection.
Figure 24. AC Waveforms for Power Transition
1.8V device : ~ 1.5V 2.7V device : ~ 2.0V 3.3V device : ~ 2.4V VCC High 1.8V device : ~ 1.5V 2.7V device : ~ 2.0V 3.3V device : ~ 2.4V
WP
WE
45
10s

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