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| Final data BSS 84 P SIPMOS Small-Signal-Transistor Feature Product Summary VDS RDS(on) ID 3 * P-Channel * Enhancement mode * Logic Level * Avalanche rated * dv/dt rated -60 8 -0.17 SOT-23 V W A 2 1 VPS05161 Drain pin 3 Type BSS 84 P Package SOT-23 Ordering Code Q67041-S1417 Marking YBs Gate pin1 Source pin 2 Maximum Ratings, at TA = 25 C, unless otherwise specified Parameter Continuous drain current TA=25C TA=70C Symbol ID Value -0.17 -0.14 Unit A Pulsed drain current TA=25C I D puls EAS EAR dv/dt VGS Ptot T j , Tstg -0.68 2.6 0.036 -6 20 0.36 -55... +150 55/150/56 kV/s V W C mJ Avalanche energy, single pulse ID=-0.17 A , VDD=-25V, RGS=25W Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS=-0.17A, VDS=-48V, di/dt=-200A/s, Tjmax=150C Gate source voltage Power dissipation TA=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2002-09-04 Final data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 3) SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) BSS 84 P Symbol min. RthJS RthJA - Values typ. max. 200 Unit K/W - 350 300 Electrical Characteristics, at TA = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS=0, ID =-250A Symbol min. V(BR)DSS VGS(th) I DSS I GSS RDS(on) RDS(on) -60 -1 Values typ. -1.5 max. -2 Unit V Gate threshold voltage, VGS = VDS ID=-20A Zero gate voltage drain current VDS=-60V, VGS=0, TA =25C VDS=-60V, VGS=0, TA =125C A -0.1 -10 -10 8 5.8 -1 -100 -100 12 8 nA Gate-source leakage current VGS=-20V, VDS=0 Drain-source on-state resistance VGS=-4.5V, ID=-0.14A W Drain-source on-state resistance VGS=-10V, ID=-0.17A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2002-09-04 Final data Electrical Characteristics, at TA = 25 C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time gfs Ciss Coss Crss td(on) tr td(off) tf VDD=-30V, VGS=-4.5V, ID=-0.14A, RG=25W VDS2*ID*RDS(on)max , ID=-0.14A VGS=0, VDS=-25V, f=1MHz BSS 84 P Symbol Conditions min. 0.065 - Values typ. 0.13 15 6 2 6.7 16.2 8.6 20.5 max. 19 8 3 10 24.3 12.9 30.8 Unit S pF ns Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS=0, IF=-0.17A VR=-30V, IF=lS, diF/dt=100A/s Qgs Qgd Qg VDD=-48V, ID=-0.17A - 0.25 0.3 1 -3.42 0.37 0.45 1.5 - nC VDD=-48V, ID=-0.17A, VGS=0 to -10V V(plateau) VDD=-48V, ID=-0.17A V IS TA=25C - -0.93 23 10 -0.17 A -0.68 -1.24 V 34 15 ns nC Page 3 2002-09-04 Final data 1 Power dissipation Ptot = f (TA) 0.38 BSS 84 P BSS 84 P 2 Drain current ID = f (TA) parameter: VGS 10 V BSS 84 P -0.18 W A 0.32 -0.14 0.28 P tot ID -0.1 -0.08 -0.06 -0.04 -0.02 0 0 20 40 60 80 100 120 0.24 0.2 0.16 0.12 0.08 0.04 0 0 -0.12 C 160 20 40 60 80 100 120 C 160 TA TA 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25 C -10 1 BSS 84 P 4 Transient thermal impedance ZthJA = f (tp ) parameter : D = tp /T 10 3 BSS 84 P A K/W -10 0 tp = 170.0s 10 2 /I D -10 -1 = RD o S( n) VD S 1 ms Z thJA 10 1 D = 0.50 10 ms ID 0.20 0.10 -10 -2 DC 10 0 0.05 single pulse 0.02 0.01 -10 -3 -1 -10 -10 0 -10 1 V -10 2 10 -1 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 4 VDS Page 4 tp 2002-09-04 Final data 5 Typ. output characteristic ID = f (VDS) parameter: Tj = 25 C -0.4 BSS 84 P Ptot = 0.36W BSS 84 P 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS ; Tj = 25 C 26 BSS 84 P A l k ji W h VGS [V] ga -2.5 a b c d e f g 22 20 -0.32 f b c -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -8.0 -10.0 -0.28 R DS(on) e d e 18 16 14 12 10 8 6 4V GS [V] = h i j k l ID -0.24 -0.2 -0.16 -0.12 -0.08 -0.04 0 0 b c f dg h i j k l a 2 -4 a b c d e f -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 g h i j -5.5 -6.0 -6.5 -7.0 k l -8.0 -10.0 -0.5 -1 -1.5 -2 -2.5 -3 -3.5 V -5 0 0 -0.04 -0.08 -0.12 -0.16 -0.2 -0.24 -0.28 -0.32A -0.38 VDS ID 7 Typ. transfer characteristics ID = f ( VGS ); |VDS | 2 x |ID | x RDS(on)max parameter: Tj = 25 C 0.4 A 8 Typ. forward transconductance gfs = f(ID) parameter: Tj = 25 C 0.16 S 0.3 0.12 - ID 0.25 g fs V 0.1 0.2 0.08 0.15 0.06 0.1 0.04 0.05 0.02 0 0 1 2 3 4 6 0 0 0.04 0.08 0.12 0.16 A 0.22 - VGS -ID Page 5 2002-09-04 Final data 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = -0.17 A, VGS = -10 V 10 Typ. gate threshold voltage VGS(th) = f (Tj ) parameter: VGS = VDS 2.4 V 98% BSS 84 P W R DS(on) 21 BSS 84 P 18 2 - V GS(th) 16 14 12 10 8 6 4 2 0 -60 typ 1.8 1.6 1.4 typ. 98% 1.2 1 0.8 0.6 0.4 -60 2% -20 20 60 100 C 180 -20 20 60 100 C 160 TA TA 11 Typ. capacitances C = f (VDS) parameter: VGS =0, f=1 MHz 10 2 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 s -10 0 BSS 84 P A pF Ciss C -10 -1 Coss 10 1 IF -10 -2 Crss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 5 10 V 20 -10 -3 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 - VDS VSD Page 6 2002-09-04 Final data 13 Typ. avalanche energy EAS = f (TA), parameter: 3 BSS 84 P 14 Typ. gate charge VGS = f (QGate ) parameter: ID = -0.17 A pulsed; Tj = 25 C -16 BSS 84 P ID = -0.17 A , VDD = -25 V, RGS = 25 W V mJ -12 E AS 2 V GS -10 0,2 VDS max 0,8 VDS max 1.5 -8 -6 1 -4 0.5 -2 0 25 45 65 85 105 125 C TA 165 0 0 0.2 0.4 0.6 0.8 1 1.2 nC 1.5 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (TA) BSS 84 P -72 V V (BR)DSS -68 -66 -64 -62 -60 -58 -56 -54 -60 -20 20 60 100 C TA 180 Page 7 2002-09-04 Final data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. BSS 84 P Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2002-09-04 |
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