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SI4812DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V)
30
FEATURES
ID (A)
9 7.3
rDS(on) (W)
0.018 @ VGS = 10 V 0.028 @ VGS = 4.5 V
D LITTLE FOOTr Plus Power MOSFET D 100% Rg Tested
SCHOTTKY PRODUCT SUMMARY
VDS (V)
30
VSD (V) Diode Forward Voltage
0.50 V @ 1.0 A
IF (A)
1.4 D
SO-8
S S S G 1 2 3 4 Top View 8 7 6 5 D D D D Ordering Information: SI4812DY SI4812DY-T1 (with Tape and Reel) SI4812DY--E3 (Lead (Pb)-Free) SI4812DY-T1--E3 (Lead (Pb)-Free with Tape and Reel) Schottky Diode
G N-Channel MOSFET S
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Limit Parameter
Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a, b Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a, b Average Foward Current (Schottky) Pulsed Foward Current (Schottky)
a, Maximum Power Dissipation (MOSFET)a b
Symbol
VDS VGS TA = 25_C TA = 70_C ID IDM IS IF IFM TA = 25_C TA = 70_C TA = 25_C TA = 70_C TJ, Tstg PD
10 sec
30 30 "20 9 7.5 50 2.1 1.4 30 2.5 1.6 2.0 1.3
Steady State
Unit
V
6.9 5.6 1.2 0.8 1.4 0.9 1.2 0.8 -55 to 150 _C W A
a, Maximum Power Dissipation (Schottky)a b
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum J Mi Junction-to-Ambient (t v 10 sec)a ti t A bi t )
Device
MOSFET Schottky MOSFET Schottky
Symbol
Typical
40 50 72 85
Maximum
50 60 90 100
Unit
RthJA
_C/W
Maximum Junction to Ambient (t = steady state)a Junction-to-Ambient
Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 71775 S-41426--Rev. G, 26-Jul-04 www.vishay.com
1
SI4812DY
Vishay Siliconix
MOSFET + SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current (MOSFET + Schottky) On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Schottky Diode Forward Voltagea VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V IDSS ID(on) rDS(on) gfs VSD VDS = 30 V, VGS = 0 V, TJ = 100_C VDS = 30 V, VGS = 0 V, TJ = 125_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 9 A VGS = 4.5 V, ID = 7.3 A VDS = 15 V, ID = 9 A IS = 1.0 A, VGS = 0 V IS = 1.0 A, VGS = 0 V, TJ = 125_C 20 0.012 0.019 23 0.45 0.33 0.50 0.42 0.018 0.028 W S V 0.004 0.7 3.0 1 3 "100 0.100 10 20 A mA V nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 1.0 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W 0.2 16 10 35 13 35 VDS = 15 V, VGS = 5 V, ID = 9 A 13 4 5.7 2.4 25 20 50 20 70 ns W 24 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
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Document Number: 71775 S-41426--Rev. G, 26-Jul-04
SI4812DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
50
Output Characteristics
VGS = 10 thru 5 V
50
Transfer Characteristics
40 I D - Drain Current (A) 4V I D - Drain Current (A)
40
30
30
20
20 TC = 125_C 10
10 3V 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V)
25_C 0 0 1 2 3
-55_C 4 5
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.10 1800 1500 C - Capacitance (pF)
Capacitance
r DS(on) - On-Resistance ( W )
0.08
Ciss 1200 900 600 Crss 300 0 Coss
0.06
0.04 VGS = 4.5 V 0.02 VGS = 10 V
0.00 0 10 20 30 40 50 ID - Drain Current (A)
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 9 A
Gate Charge
1.6
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 9 A
8
1.4 rDS(on) - On-Resiistance (Normalized)
6
1.2
4
1.0
2
0.8
0 0 5 10 15 20 25 Qg - Total Gate Charge (nC)
0.6 -50
-25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Document Number: 71775 S-41426--Rev. G, 26-Jul-04
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SI4812DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
50
Source-Drain Diode Forward Voltage
0.10
On-Resistance vs. Gate-to-Source Voltage
I S - Source Current (A)
10
r DS(on) - On-Resistance ( W )
TJ = 150_C
0.08
0.06
ID = 9.0 A
1
TJ = 25_C
0.04
0.02
0.1
0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Reverse Current (Schottky)
20 10 I R - Reverse Current (mA) 40 1 Power (W) 30 V 0.1 0.01 10 V 30 50
Single Pulse Power (MOSFET)
20
0.001
20 V
10
0.0001
0
25
50
75
100
125
150
0 0.01 0.1 1 Time (sec) 10 100 600
TJ - Junction Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient (MOSFET)
2 1 Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1 0.05 0.02 Single Pulse
PDM t1
t2 1. Duty Cycle, D =
t1 t2 2. Per Unit Base = RthJA = 72_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (sec)
100
600
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Document Number: 71775 S-41426--Rev. G, 26-Jul-04
SI4812DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient (Schottky)
2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02
Notes: PDM t1
t2 1. Duty Cycle, D =
t1 t2 2. Per Unit Base = RthJA = 85_C/W
Single Pulse 0.01 10-4 10-3 10-2 10-1 1
3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
10
30
Square Wave Pulse Duration (sec)
Document Number: 71775 S-41426--Rev. G, 26-Jul-04
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