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SGP10N60A, SGB10N60A SGW10N60A Fast IGBT in NPT-technology * 75% lower Eoff compared to previous generation combined with low conduction losses * Short circuit withstand time - 10 s * Designed for: - Motor controls - Inverter * NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability C G E P-TO-220-3-1 (TO-220AB) P-TO-263-3-2 (D-PAK) P-TO-247-3-1 (TO-263AB) (TO-247AC) * Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SGP10N60A SGB10N60A SGW10N60A Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 150C Gate-emitter voltage Avalanche energy, single pulse IC = 10 A, VCC = 50 V, RGE = 25 , start at Tj = 25C Short circuit withstand time Power dissipation TC = 25C Operating junction and storage temperature Tj , Tstg -55...+150 C 1) VCE 600V IC 10A VCE(sat) 2.3V Tj 150C Package TO-220AB TO-263AB TO-247AC Ordering Code Q67040-S4457 Q67040-S4507 Q67040-S4510 Symbol VCE IC Value 600 20 10.6 Unit V A ICpul s VGE EAS 40 40 20 70 V mJ tSC Ptot 10 92 s W VGE = 15V, VCC 600V, Tj 150C 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Jul-02 SGP10N60A, SGB10N60A SGW10N60A Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Thermal resistance, junction - ambient SMD version, device on PCB 1) Symbol Conditions Max. Value Unit RthJC RthJA RthJA TO-220AB TO-247AC TO-263AB 1.35 62 40 40 K/W Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 A VCE(sat) V G E = 15 V , I C = 10 A T j =2 5 C T j =1 5 0 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 30 0 A , V C E = V G E V C E = 60 0 V, V G E = 0 V T j =2 5 C T j =1 5 0 C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 2) Symbol Conditions Value min. 600 1.7 3 Typ. 2 2.3 4 6.7 550 62 42 52 7 13 100 max. 2.4 2.8 5 Unit V A 40 1500 100 660 75 51 68 A nC nH nA S pF IGES gfs Ciss Coss Crss QGate LE IC(SC) V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 10 A V C E = 25 V , V G E = 0V , f= 1 MH z V C C = 48 0 V, I C =1 0 A V G E = 15 V T O - 22 0A B T O - 24 7A C V G E = 15 V ,t S C 10 s V C C 6 0 0 V, T j 15 0 C 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70m thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Jul-02 2 SGP10N60A, SGB10N60A SGW10N60A Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =2 5 C , V C C = 40 0 V, I C = 1 0 A, V G E = 0/ 15 V , R G = 25 , 1) L = 18 0 nH , 1) C = 55 pF Energy losses include "tail" and diode reverse recovery. 28 12 178 24 0.15 0.17 0.320 34 15 214 29 0.173 0.221 0.394 mJ ns Symbol Conditions Value min. typ. max. Unit Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 C V C C = 40 0 V, I C = 1 0 A, V G E = 0/ 15 V , R G = 25 1) L = 18 0 nH , 1) C = 55 pF Energy losses include "tail" and diode reverse recovery. 28 12 198 26 0.260 0.280 0.540 34 15 238 32 0.299 0.364 0.663 mJ ns Symbol Conditions Value min. typ. max. Unit 1) Leakage inductance L an d Stray capacity C due to dynamic test circuit in Figure E. 3 Jul-02 SGP10N60A, SGB10N60A SGW10N60A 50A T C =80c IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT Ic t p =5 s 40A 30A 20A 10A T C =110c Ic 10A 15 s 50 s 1A 2 00 s 1ms DC 0,1A 0A 10Hz 100Hz 1kHz 10kHz 100kHz 1V 10V 100V 1000V f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 25) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C) 120 W 25A 100 W 20A Ptot, POWER DISSIPATION 80 W IC, COLLECTOR CURRENT 15A 60 W 10A 40 W 20 W 5A 0W 25 C 50 C 75 C 10 0C 12 5C 0A 25C 50C 75C 1 0 0 C 1 2 5 C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C) TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C) 4 Jul-02 SGP10N60A, SGB10N60A SGW10N60A 35A 30A 35A 30A IC, COLLECTOR CURRENT 25A V G E= 2 0 V 20A 15A 10A 5A 0A 0V 15V 13V 11V 9V 7V 5V IC, COLLECTOR CURRENT 25A V G E= 2 0 V 20A 15A 10A 5A 0A 0V 15V 13V 11V 9V 7V 5V 1V 2V 3V 4V 5V 1V 2V 3V 4V 5V VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25C) VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150C) VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE 35A 30A 3,5V I C =20A 3,0V T j=+25C +150C IC, COLLECTOR CURRENT 25A 20A 15A 10A 5A 0A 0V 2,5V I C =10A 2,0V I C =5A 2V 4V 6V 8V 10V 1,5V 0C 50C 100C 150C VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 10V) Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Jul-02 SGP10N60A, SGB10N60A SGW10N60A t d(off) t, SWITCHING TIMES 100ns t, SWITCHING TIMES 1 00 n s t d(o ff) tf t d(on) tr 10ns 0A tf t d(o n ) tr 20 40 60 8 0 5A 10A 15A 20A 25A 10 n s 0 IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, RG = 25, Dynamic test circuit in Figure E) RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, IC = 10A, Dynamic test circuit in Figure E) 5 ,5 V VGE(th), GATE-EMITTER THRESHOLD VOLTAGE 5 ,0 V 4 ,5 V 4 ,0 V 3 ,5 V 3 ,0 V 2 ,5 V 2 ,0 V 1 ,5 V 1 ,0 V -5 0 C 0C 5 0 C 1 0 0 C 1 5 0C m in . ty p . m ax. t d (o ff) t, SWITCHING TIMES 100ns t d(o n) tf tr 50C 100C 150C 10ns 0C Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 10A, RG = 2 5, Dynamic test circuit in Figure E) Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA) 6 Jul-02 SGP10N60A, SGB10N60A SGW10N60A 1,6m J 1,4m J *) Eon and Ets include losses due to diode recovery. 1,0m J *) Eon and Ets include losses due to diode recovery. E ts * E, SWITCHING ENERGY LOSSES 1,2m J 1,0m J 0,8m J E, SWITCHING ENERGY LOSSES E ts * 0,8m J 0,6m J E on * 0,6m J E off 0,4m J 0,2m J 0,0m J 0A E off 0,4m J E on * 5A 10A 15A 20A 25A 0,2m J 0 20 40 60 80 IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, RG = 25, Dynamic test circuit in Figure E) RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, IC = 10A, Dynamic test circuit in Figure E) 0,8mJ ZthJC, TRANSIENT THERMAL IMPEDANCE *) Eon and Ets include losses due to diode recovery. 10 K/W D=0.5 0.2 10 K/W -1 0 E, SWITCHING ENERGY LOSSES 0,6mJ 0.1 0.05 0.02 0,4mJ E ts* 0,2mJ R,(K/W) 0.4287 0.4830 0.4383 R1 , (s) 0.0358 4.3*10-3 3.46*10-4 R2 10 K/W -2 0.01 E off E on* C 1 = 1 / R 1 C 2 = 2 /R 2 single pulse 10 K/W 1s -3 0,0mJ 0C 50C 100C 150C 10s 100s 1m s 10m s 100m s 1s Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 10A, RG = 2 5, Dynamic test circuit in Figure E) tp, PULSE WIDTH Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T) 7 Jul-02 SGP10N60A, SGB10N60A SGW10N60A 25V 1nF C iss 20V VGE, GATE-EMITTER VOLTAGE 15V 120V 480V C, CAPACITANCE 100pF C oss C rss 10V 5V 0V 0nC 25nC 50nC 75nC 10pF 0V 10V 20V 30V QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 10A) VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz) 25 s 200A 20 s IC(sc), SHORT CIRCUIT COLLECTOR CURRENT tsc, SHORT CIRCUIT WITHSTAND TIME 150A 15 s 100A 10 s 50A 5 s 0 s 10V 11V 12V 13V 14V 15V 0A 10V 12V 14V 16V 18V 20V VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 600V, start at Tj = 25C) VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (VCE 600V, Tj = 150C) 8 Jul-02 SGP10N60A, SGB10N60A SGW10N60A TO-220AB symbol dimensions [mm] min max 10.30 15.95 0.86 3.89 3.00 6.80 14.00 4.75 0.65 1.32 min [inch] max 0.4055 0.6280 0.0339 0.1531 0.1181 0.2677 0.5512 0.1870 0.0256 0.0520 A B C D E F G H K L M N P T 9.70 14.88 0.65 3.55 2.60 6.00 13.00 4.35 0.38 0.95 0.3819 0.5858 0.0256 0.1398 0.1024 0.2362 0.5118 0.1713 0.0150 0.0374 2.54 typ. 4.30 1.17 2.30 4.50 1.40 2.72 0.1 typ. 0.1693 0.0461 0.0906 0.1772 0.0551 0.1071 TO-263AB (D2Pak) symbol dimensions [mm] min max 10.20 1.30 1.60 1.07 0.85 4.50 1.37 9.45 2.50 0.20 5.20 3.00 0.60 10.80 1.15 6.23 4.60 9.40 16.15 min [inch] max 0.4016 0.0512 0.0630 0.0421 0.0335 0.1772 0.0539 0.3720 0.0984 0.0079 0.2047 0.1181 0.0236 A B C D E F G H K L M N P Q R S T U V W X Y Z 9.80 0.70 1.00 1.03 0.65 4.30 1.17 9.05 2.30 0.00 4.20 2.40 0.40 0.3858 0.0276 0.0394 0.0406 0.0256 0.1693 0.0461 0.3563 0.0906 0.0000 0.1654 0.0945 0.0157 2.54 typ. 5.08 typ. 0.1 typ. 0.2 typ. 15 typ. 0.5906 typ. 8 max 8 max 0.4252 0.0453 0.2453 0.1811 0.3701 0.6358 9 Jul-02 SGP10N60A, SGB10N60A SGW10N60A TO-247AC symbol dimensions [mm] min max 5.28 2.51 2.29 1.32 2.06 3.18 min [inch] max 0.2079 0.0988 0.0902 0.0520 0.0811 0.1252 A B C D E F G H K L M N P 4.78 2.29 1.78 1.09 1.73 2.67 0.1882 0.0902 0.0701 0.0429 0.0681 0.1051 0.76 max 20.80 15.65 5.21 19.81 3.560 21.16 16.15 5.72 20.68 4.930 0.0299 max 0.8189 0.6161 0.2051 0.7799 0.1402 0.8331 0.6358 0.2252 0.8142 0.1941 3.61 6.12 6.22 0.1421 0.2409 0.2449 Q 10 Jul-02 SGP10N60A, SGB10N60A SGW10N60A 1 Tj (t) p(t) 2 r2 r1 n rn r1 r2 rn TC Figure D. Thermal equivalent circuit Figure A. Definition of switching times Figure B. Definition of switching losses Figure E. Dynamic test circuit Leakage inductance L =180nH an d Stray capacity C =55pF. 11 Jul-02 SGP10N60A, SGB10N60A SGW10N60A Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 12 Jul-02 |
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