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Cascadable Silicon Bipolar MMIC Amplifier Technical Data
MSA-1110
Features
* High Dynamic Range Cascadable 50 or 75 Gain Block * 3 dB Bandwidth: 50 MHz to 1.6 GHz * 17.5 dBm Typical P1 dB at 0.5 GHz * 12 dB Typical 50 Gain at 0.5 GHz * 3.5 dB Typical Noise Figure at 0.5 GHz * Hermetic Gold-ceramic Microstrip Package
(MMIC) housed in a hermetic high reliability package. This MMIC is designed for high dynamic range in either 50 or 75 systems by combining low noise figure with high IP3. Typical applications include narrow and broadband linear amplifiers in industrial and military systems. The MSA-series is fabricated using HP's 10 GHz fT, 25 GHz f MAX silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
100 mil Package
Description
The MSA-1110 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit
Typical Biasing Configuration
R bias VCC > 8 V
RFC (Optional) 4 C block 3 IN 1
MSA
C block OUT Vd = 5.5 V
2
5965-9558E
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MSA-1110 Absolute Maximum Ratings
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 90 mA 560 mW +13 dBm 200C -65 to 200C Thermal Resistance[2,4]: jc = 135C/W
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 7.4 mW/C for TC > 124C. 4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section "Thermal Resistance" for more information.
Electrical Specifications[1], TA = 25C
Symbol
GP GP f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT
Parameters and Test Conditions: Id = 60 mA, ZO = 50
Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth[2] Input VSWR Output VSWR 50 Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.1 to 1.0 GHz f = 0.1 to 1.0 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.1 GHz f = 0.1 to 1.0 GHz
Units
dB dB GHz
Min.
11.5
Typ.
12.5 0.7 1.6 1.7:1 1.9:1
Max.
13.5 1.0
dB dBm dBm psec V mV/C 4.5 16.0
3.5 17.5 30.0 160 5.5 -8.0
4.5
6.5
Notes: 1. The recommended operating current range for this device is 40 to 75 mA. Typical performance as a function of current is on the following page. 2. Referenced from 50 MHz gain (G P).
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MSA-1110 Typical Scattering Parameters (ZO = 50 , TA = 25C, Id = 60 mA)
Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang k
.0005 .005 .025 .050 .100 .200 .300 .400 .500 .600 .700 .800 .900 1.000 1.500 2.000 2.500 3.000
.83 .54 .15 .10 .08 .09 .11 .13 .16 .18 .21 .23 .25 .27 .36 .42 .47 .47
-7 -50 -78 -64 -63 -74 -85 -94 -102 -108 -114 -120 -126 -131 -153 -171 177 159
19.5 16.8 13.0 12.6 12.5 12.4 12.3 12.3 12.1 12.0 11.8 11.6 11.4 11.1 9.8 8.4 7.2 5.9
9.44 6.92 4.47 4.26 4.23 4.17 4.10 4.10 4.04 3.98 3.89 3.80 3.71 3.60 3.10 2.64 2.29 1.97
176 158 167 171 171 166 160 154 148 143 137 131 126 120 96 74 59 43
-31.9 -18.7 -16.6 -16.5 -16.5 -16.4 -16.2 -16.1 -15.9 -15.6 -15.4 -15.2 -15.0 -14.8 -13.8 -13.3 -12.5 -13.2
.025 .116 .148 .149 .150 .152 .154 .157 .161 .165 .169 .173 .178 .182 .203 .217 .236 .220
39 34 9 5 4 4 5 6 7 8 8 8 8 8 4 1 -2 -10
.84 .55 .15 .10 .08 .09 .12 .15 .18 .20 .23 .25 .28 .30 .37 .40 .41 .38
-7 -50 -79 -67 -66 -78 -89 -98 -106 -113 -120 -126 -132 -137 -160 -178 172 157
0.77 0.60 1.03 1.08 1.09 1.09 1.07 1.05 1.02 1.00 0.97 0.95 0.92 0.91 0.83 0.82 0.80 0.95
A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25C, ZO = 50
(unless otherwise noted)
16 14 12
G p (dB)
100 TC = +125C TC = +25C
14 0.1 GHz 0.5 GHz 1.0 GHz, 1.0 GHz
ZO = 50
80 T = -55C C 60
12
10 8 6 4
Gp (dB)
Id (mA)
ZO = 75
10 2.0 GHz
40
8
20 2 0 .02 0 .05 0.1 0.5 1.0 2.0 3.0 0 2 4 Vd (V) 6 8 FREQUENCY (GHz)
6
4 20 40 60 I d (mA) 80
Figure 1. Typical Power Gain vs. Frequency, Id = 60 mA.
P1 dB (dBm)
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
18 17 16
22 I d = 75 mA
5.0
20 P1 dB
Gp (dB)
4.5 18
NF (dB)
13 12 GP 5
NF (dB)
P1 dB (dBm)
I d = 60 mA
4.0
11
16 3.5 I d = 40 mA 3.0 0.1
14 NF
I d = 75 mA I d = 60 mA I d = 40 mA 0.2 0.3 0.5 1.0 2.0
4 3 -55 +25 TEMPERATURE (C)
+125
12 0.1
0.2 0.3
0.5
1.0
2.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain Compression, Noise Figure and Power Gain vs. Case Temperature, f = 0.5 GHz, Id = 60 mA.
Figure 5. Output Power at 1 dB Gain Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
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100 mil Package Dimensions
.040 1.02 4 GROUND .020 .508 RF INPUT 1 RF OUTPUT AND BIAS 3
2
GROUND
Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13
.004 .002 .10 .05
.100 2.54
.495 .030 12.57 .76
.030 .76
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