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Cascadable Silicon Bipolar MMIC Amplifier Technical Data
MSA-1100
Features
* High Dynamic Range Cascadable 50 or 75 Gain Block * 3 dB Bandwidth: 50 MHz to 1.6 GHz * 17.5 dBm Typical P1dB at 0.5 GHz * 12 dB Typical 50 Gain at 0.5 GHz * 3.5 dB Typical Noise Figure at 0.5 GHz
combining low noise figure with high IP3. Typical applications include narrow and broadband linear amplifiers in industrial and military systems. The MSA-series is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. The recommended assembly procedure is gold-eutectic die attach at 400C and either wedge or ball bonding using 0.7 mil gold wire.
Chip Outline[1]
3 5
2
1
4
Description
The MSA-1100 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) chip. This MMIC is designed for high dynamic range in either 50 or 75 systems by
This chip is intended to be used with an external blocking capacitor completing the shunt feedback path (closed loop). Data sheet characterization is given for a 200 pF capacitor. Low frequency performance can be extended by using a larger valued capacitor.[1]
Note: 1. Refer to the APPLICATIONS section "Silicon MMIC Chip Use" for additional information.
Typical Biasing Configuration
R bias (Required) C Fbk VCC 8 V
RFC (Optional) 4 C block 3 IN 1
MSA
C block OUT Vd = 5.5 V
2
5965-9555E
6-450
AK
MSA-1100 Absolute Maximum Ratings
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 100 mA 650 mW +13 dBm 200C -65 to 200C Thermal Resistance[2,4]: jc[2] = 57C/W
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TMounting Surface (TMS) = 25C. 3. Derate at 17.5 mW/C for TMounting Surface > 163C. 4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods.
Electrical Specifications[1], TA = 25C
Symbol
GP GP f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT
Parameters and Test Conditions[2]: Id = 60 mA, ZO = 50
Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth[3] Input VSWR Output VSWR 50 Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.1 to 1.0 GHz f = 0.1 to 1.0 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.1 GHz f = 0.1 to 1.0 GHz
Units
dB dB GHz
Min.
Typ.
12.5 0.7 1.6 1.7:1 1.9:1
Max.
dB dBm dBm psec V mV/C 4.5
3.5 17.5 30.0 125 5.5 -8.0 6.5
Notes: 1. The recommended operating current range for this device is 40 to 75 mA. Typical performance as a function of current is on the following page. 2. RF performance of the chip is determined by packaging and testing 10 devices per wafer. 3. Referenced from 0.05 GHz gain (G P).
Part Number Ordering Information
Part Number MSA-1100-GP4 Devices Per Tray 100
6-451
MSA-1100 Typical Scattering Parameters[1,2] (TA = 25C, Id = 60 mA)
Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang k
0.001 0.005 0.010 0.050 0.100 0.200 0.400 0.600 0.800 1.000 1.500 2.000 2.500 3.000 3.500 4.000
.72 .19 .16 .04 .05 .07 .14 .19 .25 .31 .40 .47 .50 .52 .51 .50
-26 -73 -69 -59 -66 -78 -92 -102 -110 -117 -132 -145 -150 -158 -164 -169
19.3 14.1 13.9 12.8 12.8 12.8 12.7 12.5 12.3 12.0 10.9 9.6 8.3 7.0 5.7 4.6
9.23 5.09 4.97 4.39 4.38 4.36 4.31 4.22 4.11 4.00 3.52 3.01 2.60 2.23 1.92 1.70
168 165 168 175 175 170 162 153 144 137 117 100 89 77 68 61
-23.4 -16.7 -16.6 -16.0 -16.0 -15.9 -15.6 -15.3 -14.9 -14.4 -13.4 -12.6 -12.0 -11.6 -11.1 -10.5
.067 .147 .148 .159 .158 .161 .165 .171 .180 .190 .214 .235 .251 .263 .278 .297
46 11 9 3 2 4 7 10 13 14 15 14 16 17 19 22
.72 .19 .16 .04 .05 .08 .14 .21 .27 .33 .42 .46 .45 .42 .38 .34
-27 -77 -79 -102 -100 -100 -105 -111 -116 -122 -136 -148 -152 -156 -155 -152
.52 .96 .99 1.06 1.06 1.05 1.01 .96 .90 .83 .70 .64 .63 .66 .73 .79
Notes: 1. S-parameters are de-embedded from 200 mil BeO package measured data using the package model found in the DEVICE MODELS section. 2. S-parameter data assumes an external 200 pF capacitor. Low frequency performance can be extended using a larger valued capacitor.
6-452
Typical Performance, TA = 25C
(Unless otherwise noted, performance is for a MSA-1100 used with an external 200 pF capacitor. See bonding diagram.)
P1 dB (dBm)
24 21
14 0.1 GHz 0.5 GHz 1.0 GHz, 1.0 GHz
18 17 16 13 12 GP 11 5 4 3 NF P1 dB
12 18
G p (dB)
12 9 6 3 0 .02 Open Loop Closed Loop .05 .1 .3 .5 1.0 2.0 3.0
8
2.0 GHz
6
4 20 40 60 I d (mA) 80 FREQUENCY (GHz)
NF (dB)
-55 -25
+25
+85
+125
TEMPERATURE (C)
Figure 1. Typical Power Gain vs. Frequency, Id = 60 mA.
Figure 2. Power Gain vs. Current.
Figure 3. Output Power at 1 dB Gain Compression, Noise Figure and Power Gain vs. Case Temperature, f = 0.5 GHz, Id = 60 mA.
22 20
P1 dB (dBm)
18 16 14 12 I d = 75 mA I d = 60 mA I d = 40 mA
5.0 4.0 3.0
NF (dB)
0.1
0.2 0.3
0.5
1.0
2.0
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain Compression and Noise Figure vs. Frequency.
MSA-1100 Bonding Diagram
Input Trace 5 MSA Die 2 1 3 (backside contact)
Numbers refer to pin contacts listed on the Chip Outline.
A11
MSA-1100 Chip Dimensions
Ground Output Trace Capacitor (200 pF typ)
2 (3) Output (Backside Contact) (4) Optional 3 Topside Output* 5 (2) Ground
4
AK
335 m 13.2 mil
4
Ground
(1) Input 1
495 m 19.5 mil
Bondpad for Feedback Capacitor (5)
Unless otherwise specified, tolerances are 13 m / 0.5 mils. Chip thickness is 114 m / 4.5 mil. Bond Pads are 41 m / 1.6 mil typical on each side. * Output contact is made by die attaching the backside of the die.
6-453
Gp (dB)
15
Gp (dB)
10

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