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Variable Capacitance Diodes MA2S377 Silicon epitaxial planar type Unit : mm For VCO and TCXO I Features * SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package 0.15 min. 0.15 min. 0.27 - 0.02 0.8 0.1 + 0.05 1.3 0.1 I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Forward current (DC) Junction temperature Storage temperature Symbol VR IF Tj Tstg Rating 12 20 150 -55 to +150 Unit 0.7 0.1 1.7 0.1 V mA C C 1 : Anode 2 : Cathode SS-Mini Type Package (2-pin) Marking Symbol: 7 I Electrical Characteristics Ta = 25C 3C Parameter Reverse current (DC) Diode capacitance Symbol IR CD(2V) CD(10V) Capacitance ratio Series resistance* CD(2V)/CD(10V) rD VR = 1 V, f = 470 MHz VR = 12 V VR = 2 V, f = 1 MHz VR = 10 V, f = 1 MHz 2.80 1.10 2.20 0.40 Conditions Min Typ Max 10 3.40 1.50 2.80 0.60 Unit nA pF pF Note) 1 Rated input/output frequency: 470 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 0 to 0.1 0.13 - 0.02 + 0.05 0.27 - 0.02 + 0.05 1 MA2S377 CD VR 10 8 7 6 5 4 3 f = 1 MHz Ta = 25C 120 25C Variable Capacitance Diodes IF V F 1.030 CD Ta f = 1 MHz 100 Diode capacitance CD (pF) Forward current IF (mA) 1.020 Ta = 60C VR = 2 V CD(Ta) CD(Ta = 25 ) - 40C 50 10 V 1.010 2 1.000 0.990 1 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 0.4 0.9 1.4 0.986 0 20 40 60 80 100 Reverse voltage VR (V) Forward voltage VF (V) Ambient temperature Ta (C) IR Ta 100 VR = 28 V 10 Reverse current IR (nA) 1 0.1 0.01 0.001 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) 2 |
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