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| FDS4559 April 2002 FDS4559 60V Complementary PowerTrenchMOSFET General Description This complementary MOSFET device is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features * Q1: N-Channel 4.5 A, 60 V RDS(on) = 55 m @ VGS = 10V RDS(on) = 75 m @ VGS = 4.5V * Q2: P-Channel -3.5 A, -60 V RDS(on) = 105 m @ VGS = -10V RDS(on) = 135 m @ VGS = -4.5V Applications * DC/DC converter * Power management * LCD backlight inverter D1 D D1 D DD2 D2 D 5 6 Q2 4 3 Q1 SO-8 Pin 1 SO-8 G1 S1 S G2 S2 G 7 8 2 1 S S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current TA = 25C unless otherwise noted Parameter Q1 60 (Note 1a) Q2 -60 20 -3.5 -20 2 1.6 1.2 1 -55 to +175 Units V V A W - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation 20 4.5 20 (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 C/W C/W Package Marking and Ordering Information Device Marking FDS4559 Device FDS4559 Reel Size 13" Tape width 12mm Quantity 2500 units 2000 Fairchild Semiconductor Corporation FDS4559 Rev C1(W) FDS4559 Electrical Characteristics Symbol W DSS IAR TA = 25C unless otherwise noted Parameter Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) Test Conditions VDD = 30 V, ID = 4.5 A Type Min Q1 Q1 Typ Max Units 90 4.5 mJ A Drain-Source Avalanche Ratings (Note 1) Off Characteristics BVDSS BVDSS TJ IDSS IGSS VGS = 0 V, ID = 250 A VGS = 0 V, ID = -250 A ID = 250 A, Referenced to 25C ID = -250 A, Referenced to 25C VDS = 48 V, VGS = 0 V VDS = -48 V, VGS = 0 V VGS = +20 V, VDS = 0 V VGS = +20 V, VDS = 0 V VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A ID = 250 A, Referenced to 25C ID = -250 A, Referenced to 25C VGS = 10 V, ID = 4.5 A VGS = 10 V, ID = 4.5 A, TJ = 125C VGS = 4.5 V, ID = 4 A VGS = -10 V, ID = -3.5 A VGS = -10 V, ID = -3.5 A, TJ = 125C VGS = -4.5 V, ID = -3.1 A VGS = 10 V, VDS = 5 V VGS = -10 V, VDS = -5 V VDS = 10 V, ID = 4.5 A VDS = -5 V, ID = -3 5 A Q1 VDS = 25 V, VGS = 0 V, f = 1.0 MHz Q2 VDS = -30 V, VGS = 0 V, f = 1.0 MHz (Note 2) Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 60 -60 58 -49 1 -1 +100 +100 1 -1 2.2 -1.6 -5.5 4 42 72 55 82 130 105 3 -3 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance V mV/C Q2 55 94 75 105 190 135 m ID(on) gFS On-State Drain Current Forward Transconductance Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 20 -20 14 9 650 759 80 90 35 39 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Q1 VDD = 30 V, ID = 1 A, VGS = 10V, RGEN = 6 Q2 VDD = -30 V, ID = -1 A, VGS = -10 V, RGEN = 6 Q1 VDS = 30 V, ID = 4.5 A, VGS = 10 V Q2 VDS = -30 V, ID = -3.5 A, VGS = -10V Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 11 7 8 10 19 19 6 12 12.5 15 2.4 2.5 2.6 3.0 20 14 18 20 35 34 15 22 18 21 ns ns ns ns nC nC nC FDS4559 Rev C1(W) FDS4559 Electrical Characteristics Symbol Parameter (continued) TA = 25C unless otherwise noted Test Conditions Type Min Typ Max Units Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A (Note 2) Voltage VGS = 0 V, IS = -1.3 A (Note 2) Q1 Q2 Q1 Q2 0.8 -0.8 1.3 -1.3 1.2 -1.2 A V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 78C/W when mounted on a 0.5 in2 pad of 2 oz copper b) 125C/W when mounted on a .02 in2 pad of 2 oz copper c) 135C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDS4559 Rev C1(W) FDS4559 Typical Characteristics: Q2 15 -4.5V -4.0V -3.5V 9 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -10V -6.0V -ID, DRAIN CURRENT (A) 12 -5.0V 1.8 VGS = -3.5V 1.6 -4.0V 1.4 -4.5V -5.0V 1.2 -6.0V -7.0V 6 -3.0V 3 -2.5V 0 0 1 2 3 4 5 -VDS, DRAIN-SOURCE VOLTAGE (V) -8.0V -10V 1 0.8 0 2 4 6 8 10 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.4 RDS(ON), ON-RESISTANCE (OHM) 2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 o ID = -3.5A VGS = -10V ID = -1.5A 0.3 TA = 125oC 0.2 0.1 TA = 25oC 0 125 150 175 2 4 6 8 10 TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 15 25oC 125oC 9 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) 12 TA = -55oC Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V 10 TA = 125oC 25oC -55oC 0.1 1 6 3 0.01 0 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) 0.001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS4559 Rev C1(W) FDS4559 Typical Characteristics: Q2 10 -VGS, GATE-SOURCE VOLTAGE (V) ID = -3.0A 8 CAPACITANCE (pF) 1200 VDS = 10V 20V 30V 1000 f = 1 MHz V GS = 0 V 800 C ISS 600 6 4 400 2 200 C RSS C OSS 0 0 4 8 Qg, GATE CHARGE (nC) 12 16 0 0 10 20 30 40 50 60 -V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 Figure 8. Capacitance Characteristics. 40 P(pk), PEAK TRANSIENT POWER (W) 100s ID, DRAIN CURRENT (A) 10 RDS(ON) LIMIT 10ms 100ms 1s VGS = -10V SINGLE PULSE RJA = 135oC/W TA = 25oC 0.01 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) 10s DC 30 SINGLE PULSE RJA = 135C/W TA = 25C 1 20 0.1 10 0 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. FDS4559 Rev C1(W) FDS4559 Typical Characteristics: Q1 20 ID, DRAIN-SOURCE CURRENT (A) 6.0V 16 5.0V 4.0V 12 4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 1.8 1.6 VGS = 4.0V 1.4 4.5V 5.0V 1.2 6.0V 8.0V 1 10V 8 3.5V 4 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) 0.8 0 4 8 12 16 20 ID, DRAIN CURRENT (A) Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 0.14 RDS(ON), ON-RESISTANCE (OHM) 2.2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 o ID = 4.5A VGS = 10V ID = 2.3A 0.12 0.1 0.08 0.06 0.04 0.02 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) TA = 25oC TA = 125oC 125 150 175 TJ, JUNCTION TEMPERATURE ( C) Figure 13. On-Resistance Variation with Temperature. 20 IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) 16 TA = -55oC 25oC 125 C o Figure 14. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V 10 1 0.1 0.01 0.001 0.0001 TA = 125oC 25oC -55oC 12 8 4 0 1 2 3 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS4559 Rev C1(W) FDS4559 Typical Characteristics: Q1 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 4.5A 8 VDS = 10V 30V 20V CAPACITANCE (pF) 900 800 700 600 500 400 300 200 100 0 0 2 4 6 8 10 12 14 Qg, GATE CHARGE (nC) 0 0 10 20 30 40 50 60 VDS, DRAIN TO SOURCE VOLTAGE (V) COSS CRSS CISS f = 1MHz VGS = 0 V 6 4 2 Figure 17. Gate Charge Characteristics. 100 RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 1m 1 VGS= 10V SINGLE PULSE RJA= 135oC/W TA= 25oC 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) DC 10ms 100ms 1s POWER (W) 100s 30 40 Figure 18. Capacitance Characteristics. SINGLE PULSE RJA = 135oC/W TA = 25oC 20 0.1 10 0 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 RJA(t) = r(t) + RJA RJA = 135C/W P(pk) t1 t2 SINGLE PULSE 0.01 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS4559 Rev C1(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E2CMOSTM EnSignaTM FACT FACT Quiet Series DISCLAIMER FAST a FASTr FRFET GlobalOptoisolator GTO HiSeC I2C ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE OPTOLOGIC a OPTOPLANAR PACMAN POP Power247 PowerTrench a QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER a UHC SMART START UltraFET a SPM VCX STAR*POWER Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. H5 |
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