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SLA5057
Absolute maximum ratings
Symbol VDSS VGSS ID ID(pulse) * PT FET 1 200 20 7 15
N-channel General purpose
External dimensions A
(Ta=25C)
***
SLA
Ratings FET 2
Unit V V A A W W C/W C/W Vrms C C
5 (Ta=25C, with all circuits operating, without heatsink) 35 (Tc=25C, with all circuits operating, with infinite heatsink)
j-a j-c
VISO Tch Tstg
* : PW100s, duty50%
25 (Junction-Air, Ta=25C, with all circuits operating) 3.57 (Junction-Case, Tc=25C, with all circuits operating) 1000 (Between fin and lead pin, AC) 150 -40 to +150
sEquivalent circuit diagram
3 FET-1 2 FET-1 5 6 FET-2 7 8 10 FET-2 9 12 FET-2 11 14 FET-2 13
1
4 pin is NC
15
Characteristic curves
ID-VDS Characteristics (Typical)
FET 1
5.5V
ID-VGS Characteristics (Typical)
FET 2
6 5
6V
FET 1
10
10
10V
5V
7
(VDS=10V)
10V
8
5.5V
8
6V
ID (A)
ID (A)
4.5V
2
2
VGS=4V
2
1 0 0
4.5V VGS=4V
TC= -40C
25C
4
3
5V
ID (A)
6
4
6
4
125C
0 0
2
4
6
8
10
2
4
6
8
10
0 0
2
4
6
8
VDS (V)
VDS (V)
VGS (V)
RDS(ON)-ID Characteristics (Typical)
FET 1
200
FET 2
(VGS=10V)
0.5
FET 2
(VGS=10V)
7 6
(VDS=10V)
0.4
150
5
(m)
RDS (ON) ()
ID (A)
0.3
4 3
(ON)
100
RDS
0.2
TC= -40C
2
50
0.1
25C 125C
1 0
1 2 3 4 5 6 7
0 0
2
4
6
8
10
0 0
0
2
4
6
8
ID (A)
ID (A)
VGS (V)
RDS(ON)-TC Characteristics (Typical)
FET 1
400
ID=5A VGS=10V
FET 2
1.0
ID=3.5A VGS=10V
0.8
300
(m)
()
200
0.6
(ON)
RDS
RDS
100 0 -40
(ON)
0.4
0.2
0
50
100
150
0 -40
0
50
100
150
TC (C)
TC (C)
SLA5057
Electrical characteristics
FET 1 Symbol min V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss Crss td (on) tr td (off) tf VSD trr 2.0 4.5 6.5 130 850 550 250 20 25 90 70 1.0 500 1.5 175 200 100 100 4.0 Specification typ max Unit V nA Conditions ID=100A, VGS=0V VGS=20V VDS=200V, VGS=0V VDS=10V, ID=1mA VDS=10V, ID=3.5A VGS=10V, ID=3.5A VDS=10V f=1.0MHz VGS=0V ID=3.5A VDD 100V RL=28.6 VGS=10V ISD=7A, VGS=0V IF=100mA 2.0 2.5 5.0 270 450 280 120 20 30 55 75 1.0 450 1.5 350 Specification min 200 100 100 4.0 typ max FET 2 Unit V nA Conditions ID=100A, VGS=0V VGS=20V VDS=200V, VGS=0V VDS=10V, ID=1mA VDS=10V, ID=3.5A VGS=10V, ID=3.5A VDS=10V f=1.0MHz VGS=0V ID=3.5A VDD 100V RL=28.6 VGS=10V ISD=7A, VGS=0V IF=100mA
(Ta=25C)
A
V S m pF pF pF ns ns ns ns V ns
A
V S m pF pF pF ns ns ns ns V ns
Characteristic curves
Re(yfs)-ID Characteristics (Typical)
FET 1
20
Safe Operating Area (SOA)
FET 2
10
(VDS=10V)
(VDS=10V)
50
ID (pulse) max
FET 1
(TC=25C)
10 0 s
E IT D
10
40 C
5
Tc =-
Re (yfs) (S)
Re (yfs) (S)
5
=- TC
C 40 C 25 C 5 12
10 5
RD
S
(o
n)
LIM
1m
10 m s( 1s
s
=1 TC
ID (A)
25
C
ho
t)
1 0.5
TC=25C
1
0.1
1-circuit operation
1
0.5 0.3 0.05
0.5 0.3 0.05
0.05
0.1
0.5
1
5
10
0.1
0.5
1
57
0.01 0.5
1
5
10
50
100
500
ID (A)
ID (A)
VDS (V)
Capacitance-VDS Characteristics (Typical)
FET 1
3000
VGS=0V f=1MHz
FET 2
2000 1000
VGS=0V f=1MHZ
20 10
ID (pulse) max
FET 2
(TC=25C)
10 1m s 0 s
1000
Ciss
500
Capacitance (pF)
Capacitance (pF)
500
Ciss
5
10 m s (1 sh
ID (A)
RDS (on) LIMITED
Coss
100
Coss
ot
)
1 0.5
1-circuit operation
100 50
50
Crss
10 5
Crss
0.1
10 0
10
20
30
40
50
3 0
10
20
30
40
50
0.05
3
5
10
50
100
500
VDS (V)
VDS (V)
VDS (V)
IDR-VSD Characteristics (Typical)
FET 1
10
7 6
PT-Ta Characteristics
FET 2
40 35 30 25 20 15
W
With Silicone Grease Natural Cooling All Circuits Operating
8
5
IDR (A)
IDR (A)
4 3 2
5.
PT (W)
6
ith In ite fin H t ea
4
5.
si nk
VGS=0V
10
V
2
VGS= 0V
10
V
10
Without Heatsink
1 0 0
5 0
0 0
0.5
1.0
1.5
0.5
1.0
1.5
0
50
100
150
VSD (V)
VSD (V)
Ta (C)

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