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| GaAs Hall Devices OH10004 GaAs Hall Device Magnetic sensor I Features * Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T) * Input resistance: typ. 0.85 k * Satisfactory linearity of GaAs hall voltage with respect to the magnetic field * Small temperature coefficient of the hall voltage: - 0.06%/C * Mini type (4-pin) package with positioning projection. Allowing automatic insertion through the magazine package. 0.65 0.15 4 Unit : mm 2.8 - 0.3 + 0.2 1.5 0.2 1 0.5 R 0.65 0.15 0.4 - 0.05 (0.5 R) 0.16 - 0.06 + 0.1 0.95 0.95 2.9 0.2 1.9 0.2 3 2 0.5 0.1 1.1 - 0.05 + 0.1 0.8 I Applications * Various hall motor (VCR, phonograph, VD, CD, and FDD) * Automotive equipment * Industrial equipment 0 to 0.1 0.4 0.2 0.4 0.2 1.0 0.025 I Absolute Maximum Ratings Ta = 25C Parameter Control voltage Power dissipation Operating ambient temperature Storage temperature Symbol VC PD Topr Tstg Rating 12 150 -30 to +125 -55 to +125 Unit V mW C C 1 : VH Output (-) side 2 : VC Input (-) side 3 : VH Output (+) side 4 : VC Input (+) side Mini Type Package (4-pin) with positioning projection Marking Symbol: 4 I Electrical Characteristics Ta = 25C Parameter Hall voltage*1, 4 Unequilibrium ratio*2, 4 Symbol VH VHO/VH RIN ROUT Conditions VC = 6 V, B = 0.1 T VC = 6 V, B = 0 T/B = 0.1 T IC = 1 mA, B = 0 T IC = 1 mA, B = 0 T IC = 6 mA, B = 0.1 T IC = 1 mA, B = 0 T IC = 6 mA, B = 0.1 T/0.5 T 0.50 0.85 5 -0.06 0.3 2 Min 130 Typ 150 Max 170 12 Unit mV % k k %/C %/C % Input resistance Output resistance Temperature coefficient of hall voltage Temperature coefficient of input resistance Linearity of hall voltage*3 Note) *1 : VH = VH++VH- 2 *2 : Unequilibrium ratio is a percentage of VHO with respect to VH. *3 : The linearity of VH is a percentage of a difference between cumulative sensitivity of KH1 and KH5 which are measured respectively at B = 0.1 T and 0.5 T to their average. That is, KH5-KH1 VH = (the cumulative sensitivity KH = ) 1/2(KH1+KH5) IC B *4 : VH, VHO/VH rank classification Class HQ 130 to 158 -5 to +5 4HQ 4HR 4IQ HR 142 to 170 IQ 130 to 158 +2 to +12 4IR IR 142 to 170 KQ KR VH (mV) VHO/VH (%) Marking Symbol 130 to 158 142 to 170 -2 to -12 4KQ 4KR + 0.1 1.45 0.2 1 OH10004 PD T a 200 180 240 B = 1 kG IC = 6 mA 200 GaAs Hall Devices VH Ta 1 600 1 400 RIN Ta B=0 IC = 1 mA Power dissipation PD (mW) 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 Input resistance RIN () -40 Hall voltage VH (mV) 1 200 1 000 800 600 400 200 160 120 80 40 0 0 40 80 120 0 -40 0 40 80 120 Ambient temperature Ta (C) Ambient temperature Ta (C) Ambient temperature Ta (C) VH B 1 600 1 400 VC = 6 V Ta = 25C 320 280 VH IC B = 1 kG Ta = 25C 320 280 VH VC B = 1 kG Ta = 25C Hall voltage VH (mV) Hall voltage VH (mV) 1 000 800 600 400 200 0 200 160 120 80 40 0 Hall voltage VH (mV) 0 2 4 6 8 10 12 14 16 1 200 240 240 200 160 120 80 40 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 12 14 16 Magnetic flux density B (T) Control current IC (mA) Control voltage VC (V) I Typical Drive Circuit +9 V 4 3 2 1 - + +9 V -9 V -9 V -V +V 2 |
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