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| FFB3904 / FMB3904 / MMPQ3904 Discrete POWER & Signal Technologies FFB3904 E2 B2 C1 FMB3904 C2 E1 C1 E1 C2 MMPQ3904 E2 B2 E3 B3 E4 B4 B1 B1 pin #1 B2 E2 pin #1 B1 E1 SC70-6 Mark: .1A SuperSOTTM-6 Mark: .1A SOIC-16 C1 C2 C1 C3 C2 C4 C4 C3 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 40 60 6.0 200 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die FFB3904 300 2.4 415 Max FMB3904 700 5.6 180 MMPQ3904 1,000 8.0 125 240 Units mW mW/C C/W C/W C/W (c) 1998 Fairchild Semiconductor Corporation FFB3904 / FMB3904 / MMPQ3904 NPN Multi-Chip General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Typ Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current IC = 1.0 mA, IB = 0 IC = 10 A, IE = 0 IE = 10 A, IC = 0 VCE = 30 V, VEB = 0 VCE = 30 V, VEB = 0 40 60 6.0 50 50 V V V nA nA ON CHARACTERISTICS* hFE DC Current Gain IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 40 70 100 60 30 300 VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 0.65 0.2 0.3 0.85 0.95 V V V V SMALL SIGNAL CHARACTERISTICS fT Cobo Cibo NF Current Gain - Bandwidth Product Output Capacitance Input Capacitance Noise Figure (except MMPQ3904) IC = 10 mA, VCE = 20 V, f = 100 MHz VCB = 5.0 V, IE = 0, f = 1.0 MHz VEB = 0.5 V, IC = 0, f = 1.0 MHz IC = 100 A, VCE = 5.0 V, RS =1.0k, f=10 Hz to 15.7 kHz 450 2.5 6.0 2.0 MHz pF pF dB SWITCHING CHARACTERISTICS td tr ts tf Delay Time Rise Time Storage Time Fall Time VCC = 3.0 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1.0 mA VCC = 3.0 V, IC = 10mA IB1 = IB2 = 1.0 mA 18 20 150 25 ns ns ns ns *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% FFB3904 / FMB3904 / MMPQ3904 NPN Multi-Chip General Purpose Amplifier (continued) Typical Characteristics h FE - TYPICAL PULSED CURRENT GAIN vs Collector Current 500 V CE = 5V 400 125 C VCESAT- COLLECTOR-EMITTER VOLTAGE (V) Typical Pulsed Current Gain Collector-Emitter Saturation Voltage vs Collector Current 0.15 = 10 125 C 300 25 C 0.1 25 C 200 100 0 0.1 - 40 C 0.05 - 40 C 1 10 100 0.1 I C - COLLECTOR CURRENT (mA) 1 10 I C - COLLECTOR CURRENT (mA) 100 V BE(ON) BASE-EMITTER ON VOLTAGE (V) VBESAT- BASE-EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1 = 10 Base-Emitter ON Voltage vs Collector Current 1 VCE = 5V 0.8 - 40 C 25 C 0.8 - 40 C 25 C 0.6 125 C 0.6 125 C 0.4 0.4 0.1 IC 1 10 - COLLECTOR CURRENT (mA) 100 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 Collector-Cutoff Current vs Ambient Temperature ICBO- COLLECTOR CURRENT (nA) 500 CAPACITANCE (pF) 10 Capacitance vs Reverse Bias Voltage f = 1.0 MHz 100 10 1 0.1 VCB = 30V 5 4 3 2 C obo C ibo 25 50 75 100 125 TA - AMBIENT TEMPERATURE ( C) 150 1 0.1 1 10 REVERSE BIAS VOLTAGE (V) 100 FFB3904 / FMB3904 / MMPQ3904 NPN Multi-Chip General Purpose Amplifier (continued) Typical Characteristics (continued) Noise Figure vs Frequency 12 NF - NOISE FIGURE (dB) 10 8 6 4 2 0 0.1 I C = 100 A, R S = 500 Noise Figure vs Source Resistance 12 NF - NOISE FIGURE (dB) I C = 1.0 mA I C = 1.0 mA R S = 200 I C = 50 A R S = 1.0 k I C = 0.5 mA R S = 200 V CE = 5.0V 10 I C = 5.0 mA 8 6 4 2 0 0.1 I C = 50 A I C = 100 A 1 10 f - FREQUENCY (kHz) 100 1 10 R S - SOURCE RESISTANCE ( k ) 100 Current Gain and Phase Angle vs Frequency 50 45 40 35 30 25 20 15 10 5 0 h fe PD - POWER DISSIPATION (W) Power Dissipation vs Ambient Temperature 0 20 40 60 80 100 120 140 160 180 1000 1 - CURRENT GAIN (dB) 0.75 SOT-6 - DEGREES 0.5 h V CE = 40V I C = 10 mA 1 10 100 f - FREQUENCY (MHz) fe 0.25 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 Turn-On Time vs Collector Current 500 I B1 = I B2 = 40V TIME (nS) 100 15V t r @ V CC = 3.0V 2.0V 10 t d @ VCB = 0V 5 1 10 I C - COLLECTOR CURRENT (mA) 100 Ic 10 Rise Time vs Collector Current 500 VCC = 40V t r - RISE TIME (ns) I B1 = I B2 = Ic 10 100 T J = 125C T J = 25C 10 5 1 10 I C - COLLECTOR CURRENT (mA) 100 FFB3904 / FMB3904 / MMPQ3904 NPN Multi-Chip General Purpose Amplifier (continued) Typical Characteristics (continued) Storage Time vs Collector Current 500 t S - STORAGE TIME (ns) T J = 25C Fall Time vs Collector Current 500 I B1 = I B2 = t f - FALL TIME (ns) T J = 125C Ic 10 I B1 = I B2 = Ic 10 VCC = 40V 100 T J = 125C 100 T J = 25C 10 5 1 10 I C - COLLECTOR CURRENT (mA) 100 10 5 1 10 I C - COLLECTOR CURRENT (mA) 100 Test Circuits 3.0 V 300 ns 10.6 V Duty Cycle = 2% 0 - 0.5 V < 1.0 ns 10 K 275 C1 < 4.0 pF FIGURE 1: Delay and Rise Time Equivalent Test Circuit 3.0 V 10 < t1 < 500 s t1 10.9 V 275 Duty Cycle = 2% 0 10 K C1 < 4.0 pF - 9.1 V < 1.0 ns 1N916 FIGURE 2: Storage and Fall Time Equivalent Test Circuit |
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