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| BFR 181 NPN Silicon RF Transistor * For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA * fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 181 RFs Q62702-F1314 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 20 2 mW 175 150 - 65 ... + 150 - 65 ... + 150 335 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS 91 C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-11-1996 BFR 181 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V A 100 nA 100 A 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 5 mA, VCE = 8 V Semiconductor Group 2 Dec-11-1996 BFR 181 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit fT 6 8 0.26 0.18 0.3 - GHz pF 0.45 dB 1.45 1.8 - IC = 10 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance Ceb - VEB = 0.5 V, f = 1 MHz Noise figure F IC = 2 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Power gain 1) Gms 18 - IC = 5 mA, VCE = 8 V, f = 900 MHz ZS = ZSopt, ZL = ZLopt Power gain 2) Gma |S21e|2 14 9 11.5 - IC = 5 mA, VCE = 8 V, f = 1.8 GHz ZS = ZSopt, ZL = ZLopt Transducer gain IC = 5 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 1) Gms = |S21/S12| 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-11-1996 BFR 181 SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 0.0010519 fA VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 22.403 1.7631 5.1127 1.6528 6.6315 1.8168 17.028 1.0549 1.1633 2.7449 0 3 V V fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 96.461 0.12146 16.504 0.24951 9.9037 2.1372 0.73155 0.33814 0 0.30013 0 0 0.99768 A A V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.90617 12.603 0.87757 0.01195 0.69278 2.2171 0.43619 0.12571 319.69 0.75 1.11 300 fA fA mA V fF V eV K 0.082903 - All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut fur Mobil-und Satellitenfunktechnik (IMST) (c) 1996 SIEMENS AG Package Equivalent Circuit: LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = 0.85 0.51 0.69 0.61 0 0.49 73 84 165 nH nH nH nH nH nH fF fF fF Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 4 Dec-11-1996 BFR 181 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 200 mW Ptot 160 TS 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 C 150 TA ,TS TA Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 10 2 RthJS K/W P totmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 5 Dec-11-1996 BFR 181 Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 0.45 pF 10 GHz Ccb 0.35 0.30 fT 8 7 6 10V 8V 5V 0.25 5 0.20 4 0.15 3 0.10 0.05 0.00 0 2 1 0 4 8 12 16 V VR 22 0 2 4 6 8 10 12 3V 2V 1V 0.7V 14 mA 17 IC Power Gain Gma, Gms = f(IC) f = 0.9GHz VCE = Parameter 20 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 14 dB dB 10V 5V 3V 8 2V 10V 3V G G 10 16 2V 14 6 1V 12 4 1V 10 2 0.7V 0 2 4 6 8 10 12 14 mA IC 18 0.7V 8 0 0 2 4 6 8 10 12 14 mA IC 18 Semiconductor Group 6 Dec-11-1996 BFR 181 Power Gain Gma, Gms = f(VCE):_____ |S21 |2 = f(VCE):--------- Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) f = Parameter 20 VCE = Parameter, f = 900MHz 24 dBm 8V IC=5mA 0.9GHz dB 20 G 16 IP3 18 16 3V 5V 14 0.9GHz 14 12 10 2V 12 1.8GHz 8 6 1V 10 1.8GHz 8 6 0 2 4 6 8 V 12 4 2 0 -2 0 2 4 6 8 10 12 14 16 V 20 V CE V CE Power Gain Gma, Gms = f(f) VCE = Parameter 30 dB 26 Power Gain |S21|2= f(f) VCE = Parameter 25 IC=5mA IC=5mA G 24 22 20 18 16 14 12 10 8 6 4 0.0 0.5 1.0 1.5 2.0 2.5 10V 1V 0.7V GHz f 3.5 S21 dB 15 10 5 10V 1V 0.7V 0 0.0 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 Semiconductor Group 7 Dec-11-1996 |
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