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| PTF 10021 30 Watts, 1.4-1.6 GHz GOLDMOSTM Field Effect Transistor Description The PTF 10021 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications in the 1.4 to 1.6 GHz range such as DAB/DAR. It is rated at 30 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. * * * * * * INTERNALLY MATCHED Performance at 1.5 GHz, 28 Volts - Output Power = 30 Watts Min - Power Gain = 13 dB Typ - Efficiency = 48% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% Lot Traceability Typical Output Power vs. Input Power 40 Output Power (Watts) 30 20 100 21 A-1 234 569 813 VDD = 28 V 10 IDQ = 360 mA f = 1.5 GHz 0 1 2 3 4 5 0 Input Power (Watts) Package 20237 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 10 W, IDQ = 360 mA, f = 1.5 GHz) Power Output at 1 dB Compressed (VDD = 28 V, POUT = 30 W, IDQ = 360 mA, f = 1.5 GHz) Drain Efficiency (VDD = 28 V, POUT = 30 W, IDQ = 360 mA, f = 1.5 GHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 30 W(PEP), IDQ = 360 mA, f = 1.5 GHz-- all phase angles at frequency of test) All published data at TCASE = 25C unless otherwise indicated. Symbol Gps P-1dB h Y Min 11.0 30 45 -- Typ 13.0 -- 48 -- Max -- -- -- 10:1 Units dB Watts % -- e 1 PTF 10021 Electrical Characteristics Characteristic (100% Tested) e Conditions Symbol V(BR)DSS IDSS VGS(th) gfs Min 65 -- 3.0 -- Typ -- -- -- 2.2 Max -- 1.0 5.0 -- Units Volts mA Volts Siemens Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation at Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) TSTG RqJC Symbol VDSS VGS TJ PD Value 65 20 200 105 0.6 -40 to +150 1.65 Unit Vdc Vdc C Watts W/C C C/W Typical Performance Efficiency (%) Return Loss (dB) Output Power & Efficiency 15 14 Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency Efficiency (%) Output Power (W) Broadband Test Fixture Performance 60 50 40 30 14 12 Gain (dB) 60 50 Efficiency (%) 40 - 30 5 Return Loss (dB) -15 20 -25 10 -35 0 1600 Gain (dB) Gain 13 12 11 Gain (dB) 10 8 6 4 1400 VDD = 28 V IDQ = 360 mA POUT = 10 W VDD = 28 V IDQ = 360 mA 20 10 1700 10 1300 1400 1500 1600 Frequency (MHz) 1450 1500 1550 Frequency (MHz) 2 e Output Power vs. Supply Voltage 40 16 15 PTF 10021 Power Gain vs. Output Power VDD = 28 V f = 1.5 GHz Output Power (Watts) Power Gain (dB) 35 14 13 12 11 10 IDQ = 360 mA IDQ = 180 mA IDQ = 90 mA 30 IDQ = 360 mA f = 1.5 GHz 25 22 24 26 28 30 32 34 9 0.1 1.0 10.0 100.0 Supply Voltage (Volts) Output Power (Watts) Intermodulation Distortion vs. Output Power -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 0 Capacitance vs. Supply Voltage * 120 10 100 80 60 40 20 0 VDD = 28 V Cds and Cgs (pF) IDQ = 360 mA f1 = 1.499 GHz f2 = 1.500 GHz 5th 3rd Order VGS =0 V f = 1 MHz 8 6 4 2 0 IMD (dBc) Cds Cgs 7th Crss 0 10 20 30 40 5 10 15 20 25 30 35 40 Output Power (Watts-PEP) Supply Voltage (Volts) Bias Voltage vs. Temperature 1.03 1.02 Bias Voltage (V) 1.01 1.00 0.99 0.98 0.97 0.96 -20 30 Temp. (C) 80 130 0.3 0.87 1.44 2.01 2.58 3.15 Voltage normalized to 1.0 V Series show current (A) *This part is internally matched. Measurements of the finished product will not yield these figures. 3 Crss (pF) PTF 10021 Impedance Data VDD = 28 V, POUT = 30 W, IDQ = 360 mA D e Z Source Z Load Z0 = 10 W G S Frequency GHz 1.30 1.40 1.45 1.50 1.55 1.60 1.70 R Z Source W jX -8.77 -9.30 -10.52 -10.60 -7.30 -5.70 -2.07 R 7.70 7.90 8.30 11.60 13.30 12.90 10.50 Z Load W jX -6.77 -5.89 -5.00 -4.50 -4.90 -6.00 -7.16 3.08 3.32 3.45 3.50 3.80 3.70 3.30 Typical Scattering Parameters (VDS = 28 V, ID = 900 mA) f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 S11 Mag 0.938 0.949 0.988 0.993 0.993 0.991 0.990 0.993 0.998 0.999 1.000 0.996 0.898 0.590 0.443 0.655 0.747 0.831 0.904 0.944 0.966 0.990 S21 Ang -150.8 -156.9 -169.3 -174.7 -178.1 179.0 176.6 174.3 171.7 168.6 164.8 158.8 145.7 144.7 171.8 -175.3 -176.7 -178.1 178.4 174.2 170.6 167.3 S12 Ang 35.0 31.9 12.0 5.8 9.3 127.9 150.5 149.2 145.6 140.5 132.9 120.1 84.7 30.7 -15.9 -68.4 -102.8 -132.0 -155.7 -172.8 175.3 166.2 S22 Ang 84.1 92.3 95.2 92.8 90.5 86.2 81.9 77.9 74.6 69.1 61.2 51.9 27.0 -12.0 -57.1 -146.3 113.0 88.8 74.8 60.6 49.6 50.1 Mag 4.529 3.199 0.825 0.325 0.108 0.047 0.154 0.262 0.393 0.586 0.927 1.662 3.504 4.350 4.857 3.876 2.729 1.930 1.315 0.897 0.641 0.491 Mag 0.0012 0.0021 0.0046 0.0068 0.0093 0.0123 0.0150 0.0177 0.0212 0.0257 0.0312 0.0383 0.0521 0.0454 0.0316 0.0090 0.0119 0.0190 0.0263 0.0303 0.0299 0.0283 Mag 0.813 0.839 0.893 0.929 0.943 0.981 1.000 0.947 0.915 0.883 0.874 0.846 0.632 0.259 0.472 0.817 0.853 0.855 0.859 0.861 0.860 0.877 Ang -162. -166. -172. -176. -179. 177.7 172.2 167.8 165.2 162.8 159.9 152.3 135.8 160.0 -156. -170. 179.6 174.9 171.6 168.7 166.2 163.7 4 e Test Circuit PTF 10021 Schematic for f = 1.5 GHz Placement Diagram (not to scale) Q1 l1 l2 l3 l4 l5 l6 C1 C2 C3 C4, C5 C6 PTF 10021 0.11 l 1.5 GHz 0.0483 l 1.5 GHz 0.07 l 1.5 GHz 0.0853 l 1.5 GHz 0.07 l 1.5 GHz 0.25 l 1.5 GHz 33 pF 1.3 pF 0.7 pF 33 pF 10 uF Field Effect Transistor Microstrip 30.21 W Microstrip 11.69 W Microstrip 70 W Microstrip 11.69 W Microstrip 21 W Microstrip 70 W Chip Cap ATC 100 B Chip Cap ATC 100 B Chip Cap ATC 100 B Chip Cap ATC 100 B SMT Tantalum C7 0.1 uF C8 33 pF C9 0.1 uF C10 10 uF L1 2.7 nH L2 R1 220 W R2 220 W R3 2 KW R4 470 W R5 2.2 W Circuit Board Circuit Board Chip Cap Chip Cap ATC 100 B Chip Cap SMT Tantalum SMT Coil 4mm Ferrite Bead K 1206 SMT K 1206 SMT SMT Pot K 1206 SMT K 1206 SMt .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper 5 PTF 10021 e Artwork (1 inch ) Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. L3 (c) 1997 Ericsson Inc. EUS/KR 1301-PTF 10021 Uen Rev. A 11-23-98 6 |
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