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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ16018/D
Designer'sTM Data Sheet
MJ16018* MJW16018 *
*Motorola Preferred Device
NPN Silicon Power Transistors
1.5 kV SWITCHMODE Series
These transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line-operated switchmode applications. Typical Applications: Features: * * * * * * Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits * Collector-Emitter Voltage -- VCEV = 1500 Vdc * Fast Turn-Off Times 80 ns Inductive Fall Time -- 100_C (Typ) 110 ns Inductive Crossover Time -- 100_C (Typ) 4.5 s Inductive Storage Time -- 100_C (Typ) * 100_C Performance Specified for: Reverse-Biased SOA with Inductive Load Switching Times with Inductive Loads Saturation Voltages Leakage Currents
POWER TRANSISTORS 10 AMPERES 800 VOLTS 125 AND 175 WATTS
IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II III I I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII II II III IIIII I I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII II II II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII I I IIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II II III II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII II I II II IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII II II III I II II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I IIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II II II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIII
MAXIMUM RATINGS
Rating Symbol MJ16018 MJW16018 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage VCEO(sus) VCEV VEB IC ICM IB IBM PD 800 1500 6 Collector Current -- Continuous -- Peak(1) Base Current -- Continuous -- Peak(1) Total Power Dissipation @ TC = 25_C @ TC = 100_C Derate above TC = 25_C 10 15 8 12 175 100 1 125 50 1 Watts W/_C Operating and Storage Junction Temperature Range TJ, Tstg - 65 to 200 - 55 to 150
CASE 1-07 TO-204AA MJ16018
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol RJC TL
Max
Unit
Thermal Resistance, Junction to Case Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds
1
1
_C/W _C
275
CASE 340F-03 TO-247AE MJW16018
(1) Pulse Test: Pulse Width = 5 s, Duty Cycle
v 10%.
Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design. Preferred devices are Motorola recommended choices for future use and best overall value. Designer's and SWITCHMODE are trademarks of Motorola, Inc.
REV 1
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data
1
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I II I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I III I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIII IIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIII IIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II IIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
MJ16018 MJW16018
(1) Pulse Test: PW = 300 s, Duty Cycle
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
SWITCHING CHARACTERISTICS
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS(1)
SECOND BREAKDOWN
OFF CHARACTERISTICS(1)
Base-Emitter Saturation Voltage (IC = 5 Adc, IB = 2 Adc) Base-Emitter Saturation Voltage (IC = 5 Adc, IB = 2 Adc, TC = 100_C)
Fall Time
Storage Time
Rise Time
Delay Time
Resistive Load (Table 1)
Crossover Time
Fall Time
Storage Time
Crossover Time
Fall Time
Storage Time
Inductive Load (Table 1)
Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 kHz)
DC Current Gain (IC = 5 Adc, VCE = 5 Vdc)
Collector-Emitter Saturation Voltage (IC = 5 Adc, IB = 2 Adc) (IC = 10 Adc, IB = 5 Adc) (IC = 5 Adc, IB = 2 Adc, TC = 100_C)
Clamped Inductive SOA with Base Reverse Biased
Second Breakdown Collector Current with Base Forward Biased
Emitter Cutoff Current (VEB = 6 Vdc, IC = 0)
Collector Cutoff Current (VCE = 1500 Vdc, RBE = 50 , TC = 100_C)
Collector Cutoff Current (VCEV = 1500 Vdc, VBE(off) = 1.5 Vdc) (VCEV = 1500 Vdc, VBE(off) = 1.5 Vdc, TC = 100_C)
Collector-Emitter Sustaining Voltage (Table 1) (IC = 50 mA, IB = 0)
2
hFE, DC CURRENT GAIN 100 70 50 Baker Clamped (IC = 5 Adc, IB1 = 2 Adc, VBE(off) = 2 Vdc, VCE(pk) = 400 Vdc) PW = 25 s Baker Clamped (IC = 5 Adc, VCC = 250 Vdc, IB1 = 2 Adc, IB2 = 2 Adc, RB2 = 3 , PW = 25 s, Duty Cycle 2%) Characteristic
v
v 2%.
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
20
30
10 7 5
1 0.15 0.2
3
2
VCE = 5 V
25C
TC = 100C
0.3
2 5 0.5 0.7 1 3 IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain
0C (TJ = 100_C) (TJ = 25_C) 7 10 15 0.2 0.3 1 0.7 0.5 10 7 5 3 2 tr tf
TC = 25C 0.1 0.07 0.1 0.2
VCEO(sus)
VCE(sat)
VBE(sat)
Symbol
RBSOA
Motorola Bipolar Power Transistor Device Data
IEBO ICER ICEV IC = 1 A Cob hFE IS/b tsv tsv td ts tc tfi tc tfi
Figure 2. Collector Saturation Region
0.3 0.5 0.7 1 2 IB, BASE CURRENT (AMPS) Min 800 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4 3A 4500 4500 4000 Typ 200 900 110 See Figure 14 See Figure 13 85 80 90 60 -- -- -- -- -- -- -- -- -- -- -- -- 5A 9000 2000 9000 8000 0.25 1.5 Max 400 200 375 250 300 200 450 1.5 1.5 0.1 2.5 1 5 1.5 -- -- 8A 3 mAdc mAdc mAdc Unit 10 A Vdc Vdc Vdc pF ns ns -- 5 7
MJ16018 MJW16018
TYPICAL STATIC CHARACTERISTICS
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 7 5 3 2 1 0.7 0.5 0.3 0.2 0.1 0.1 IC/IB = 2.5 TC = 100C IC/IB = 5 TC = 25C IC/IB = 2.5 TC = 25C 5 IC/IB = 5 TC = 100C VBE, BASE-EMITTER VOLTAGE (VOLTS) 3 2 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 IC/IB = 2.5 5
TC = 25C THRU 100C
0.2
0.3
0.5 0.7
1
2
3
5
7
10
0.1
0.2
0.3
0.5 0.7
1
2
3
5
7
10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Collector-Emitter Saturation Region
Figure 4. Base-Emitter Saturation Region
104 IC, COLLECTOR CURRENT ( A) 103 TJ = 150C 102 101 100 125C 100C 75C REVERSE 25C 0 - 0.2 + 0.2 + 0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) + 0.6 FORWARD VCE = 250 V C, CAPACITANCE (pF)
10K Cib 1K
100 Cob
10
TC = 25C
10-1 - 0.4
1
1
2
5 10 20 50 100 200 VCB, COLLECTOR-BASE VOLTAGE (VOLTS)
500
1K
Figure 5. Collector Cutoff Region
Figure 6. Typical Capacitance
TYPICAL INDUCTIVE SWITCHING CHARACTERISTICS
20 10 t sv, STORAGE TIME ( s) 7 5 3 2 1 0.7 0.5 0.3 0.2 1 IC/IB = 2.5 t fi , FALL TIME (ns) 2.5 5 1000 700 500 300 200 100 70 50 30 20 10 2 3 5 7 10 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 5 2.5 5
IC/IB = 2.5
5
VBE(off) = 2 V TC = 100C
NO BAKER CLAMP BAKER CLAMPED
VBE(off) = 2 V TC = 100C
NO BAKER CLAMP BAKER CLAMPED
Figure 7. Storage Time
Figure 8. Inductive Switching Fall Time 3
Motorola Bipolar Power Transistor Device Data
MJ16018 MJW16018
TYPICAL INDUCTIVE SWITCHING CHARACTERISTICS
2000 1000 t c , CROSSOVER TIME (ns) 700 500 300 200 100 70 50 30 20 1 5 2.5 IC/IB = 2.5 t sv, STORAGE TIME ( s) 6 5 4 3 2 1 0 2 3 5 7 10 1 5 9 13 PULSE WIDTH (s) 17 21 25 IC, COLLECTOR CURRENT (AMPS) IC = 5 A IB1 = 2 A IB2 = 2 A OR VBE = - 2 V
5
VBE(off) = 2 V TC = 100C
NO BAKER CLAMP BAKER CLAMPED
Figure 9. Inductive Switching Crossover Time
Figure 10. (tsv) Storage Time versus IB1 Pulse Width
I B2 , REVERSE BASE CURRENT (AMPS)
IC pk 6 5 4 3 2 1 -1 VOLTAGE AND CURRENT IC = 5 A IB1 = 2 A VCE = 400 V 90% VCE(pk) IC tsv trv tc VCE IB 90% IB1 10% VCE(pk)
VCE(pk) 90% IC(pk) tfi tti
10% IC pk
2% IC
-2 -3 -4 -5 -6 VBE(off), REVERSE BASE-EMITTER VOLTAGE (VOLTS)
TIME
Figure 11. Reverse Base Current versus Off Voltage
Figure 12. Inductive Switching Measurements
GUARANTEED SAFE OPERATING AREA LIMITS
IC(pk) , PEAK COLLECTOR CURRENT (AMPS) 100 IC, COLLECTOR CURRENT (AMPS) 50 30 20 10 5 3 2 1 0.5 0.3 0.2 0.1 10 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 15 20 30 50 100 200 300 500 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1K dc TC = 25C 16 14 12 10 8 6 4 2 0 0 200 VBE(off) = 0 V 400 600 800 1K 1.2K 1.4K 1.6K 1.8K VCE(pk), PEAK COLLECTOR VOLTAGE (VOLTS) 2K IC/IB1 = 2.5, 5
MJ16018 MJW16018 1 ms
10 s
TC 100C VBE(off) = 2 V
Figure 13. Maximum Forward Bias Safe Operating Area 4
Figure 14. Maximum Reverse Bias Safe Operating Area Motorola Bipolar Power Transistor Device Data
MJ16018 MJW16018
100 POWER DERATING FACTOR (%) SECOND BREAKDOWN DERATING
80
60
THERMAL DERATING
40 MJ16018 MJW16018
20
0
0
40
80 120 TC, CASE TEMPERATURE (C)
160
200
Figure 15. Power Derating
SAFE OPERATING AREA INFORMATION
FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 13 may be found at any case temperature by using the appropriate curve on Figure 15. T J(pk) may be calculated from the data in Figure 16. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base-to-emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage current condition allowable during reverse biased turnoff. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 14 gives the RBSOA characteristics.
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01
D = 0.5
0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.02 0.05 0.1 0.2 0.5 1.0 RJC(t) = r(t) RJC RJC = 1.0C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME @ t1 TJ(pk) - TC = P(pk) RJC(t) 2.0 5.0 t, TIME (ms) 10 20 50 P(pk)
t1
t2
DUTY CYCLE, D = t1/t2 100 200 500 1.0 k
Figure 16. Thermal Response
Motorola Bipolar Power Transistor Device Data
5
Table 1. Test Conditions for Dynamic Performance VCEO(sus) Drive Circuit
+15 1 F 150 MTP8P10 MTP8P10 100 100 F
MJ16018 MJW16018
6 RBSOA Inductive Switching Resistive Switching For t d and t f :
A 50 R B1 +10 R B2 50 MUR105 MTP12N10 500 F 150 V off Note: Adjust Voff to obtain desired VBE(off) at Point A 1 F MJE210 0 t r 15 ns V in 11 V A H.P. 214 OR EQUIV. P.G.
Input Conditions
L = 10 mH RB2 = VCC = 20 Volts I(pk) = 50 mA S1 Closed L = 200 H RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 S1 Closed L = 200 H RB2 = 0 when VBE(off) is specified or selected for desired I B2 VCC 20 Volts, Adjusted to obtain desired IC RB1 selected for desired IB1 S1 = Open for baker clamp condition
*I C MUR1100 MUR105 +V *I B -V MUR105 I B1 S1 IB I B2 A T.U.T. L IC MUR8100 VCC VCE V CE(pk) A RB I C(pk) *I B
For ts and t f : Inductive Switching Drive Circuit
Circuit Values
V clamp
VCC *Tektronix AM503 P6302 or Equivalent
for td and t r VCC = 250 Volts RB selected for desired IB1 RL selected for desired IC for ts and t f VCC = 250 Volts RB = 0 RB1 & RB2 selected for IB1 & IB2 R L selected for desired I C
*I C MUR1100 MUR105 T.U.T.
T1
RL VCC MUR105 S1 Scope -- Tektronix 7403 or Equivalent *Tektronix AM503 P6302 or Equivalent
Test Circuit
0V
Motorola Bipolar Power Transistor Device Data
T1
Lcoil (I Cpk)
T 1 adjusted to obtain IC(pk)
MJ16018 MJW16018
PACKAGE DIMENSIONS
A N C -T- E D U V
2 2 PL SEATING PLANE
K
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY.
0.13 (0.005) L G
1
TQ
M
Y
M
-Y-
H
B
-Q- 0.13 (0.005)
M
TY
M
DIM A B C D E G H K L N Q U V
INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188
MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77
STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR
CASE 1-07 TO-204AA (TO-3) ISSUE Z
0.25 (0.010)
M
-Q- TBM
-T- E -B- U C
4
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D E F G H J K L P Q R U V MILLIMETERS MIN MAX 20.40 20.90 15.44 15.95 4.70 5.21 1.09 1.30 1.50 1.63 1.80 2.18 5.45 BSC 2.56 2.87 0.48 0.68 15.57 16.08 7.26 7.50 3.10 3.38 3.50 3.70 3.30 3.80 5.30 BSC 3.05 3.40 INCHES MIN MAX 0.803 0.823 0.608 0.628 0.185 0.205 0.043 0.051 0.059 0.064 0.071 0.086 0.215 BSC 0.101 0.113 0.019 0.027 0.613 0.633 0.286 0.295 0.122 0.133 0.138 0.145 0.130 0.150 0.209 BSC 0.120 0.134
L
A
R
1 2 3
K
P
-Y-
F D 0.25 (0.010)
M
V G
H J
YQ
S
STYLE 3: PIN 1. 2. 3. 4.
BASE COLLECTOR EMITTER COLLECTOR
CASE 340F-03 TO-247AE ISSUE E
Motorola Bipolar Power Transistor Device Data
7
MJ16018 MJW16018
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JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298
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Motorola Bipolar Power Transistor Device Data
*MJ16018/D*
MJ16018/D

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