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| PD - 93850 IRF5800 HEXFET(R) Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge D 1 6 A D VDSS = -30V D 2 5 D G 3 4 S RDS(on) = 0.085 T o p V ie w Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP-6 package with its customized leadframe produces a HEXFET(R) power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. TSOP-6 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range Max. -30 -4.0 -3.2 -32 2.0 1.3 0.016 20.6 20 -55 to + 150 Units V A W W/C mJ V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 62.5 Units C/W www.irf.com 1 2/8/00 IRF5800 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -30 --- --- --- -1.0 3.5 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.02 --- --- --- --- --- --- --- --- 11.4 2.3 2.2 11.4 11 24 14 535 94 68 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = 1mA 0.085 VGS = -10V, ID = -4.0A 0.150 VGS = -4.5V, ID = -3.0A --- V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -4.0A -1.0 VDS = -24V, VGS = 0V A -5.0 VDS = -24V, VGS = 0V, T J = 70C -100 VGS = -20V nA 100 VGS = 20V 17 ID = -4.0A --- nC VDS = -16V --- VGS = -10V 17 VDD = -15V, VGS = -10V 17 ID = -1.0A ns 36 RG = 6.0 20 RD = 15, --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 19 16 -2.0 A -32 -1.2 28 24 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -2.0A, VGS = 0V TJ = 25C, I F = -2.0A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Surface mounted on FR-4 board, t 5sec. Starting TJ = 25C, L = 2.5mH RG = 25, I AS = -4.0A. (See Fig 10 ) Pulse width 300s; duty cycle 2%. 2 www.irf.com IRF5800 100 VGS -15V -10V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V TOP 100 -I D , Drain-to-Source Current (A) 10 -I D , Drain-to-Source Current (A) 10 VGS -15V -10V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V TOP 1 1 -2.70V 0.1 -2.70V 0.1 0.01 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 0.01 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 ID = -4.0A TJ = 25 C TJ = 150 C R DS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 1.5 10 1.0 1 0.5 0.1 2.0 V DS = -15V 20s PULSE WIDTH 3.0 4.0 5.0 6.0 7.0 8.0 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 -VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF5800 800 -VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = -4.0A VDS =-16V 600 16 C, Capacitance (pF) Ciss 12 400 8 200 Coss Crss 0 1 10 100 4 0 0 4 8 FOR TEST CIRCUIT SEE FIGURE 13 12 16 20 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 100 10 TJ = 150 C -I D , Drain Current (A) I 10us 10 100us 1ms 1 10ms 1 TJ = 25 C 0.1 0.4 V GS = 0 V 0.8 1.2 1.6 2.0 0.1 1 TC = 25 C TJ = 150 C Single Pulse 10 100 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF5800 4.0 50 EAS , Single Pulse Avalanche Energy (mJ) 40 3.0 ID -1.8A -2.5A BOTTOM -4.0A TOP -I D , Drain Current (A) 30 2.0 20 1.0 10 0.0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC , Case Temperature ( C) Starting T J, Junction Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Avalanche Energy Vs. Drain Current 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 PDM t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF5800 R DS(on) , Drain-to -Source On Resistance ( ) R DS (on) , Drain-to-Source On Resistance ( ) 0.20 0.25 0.20 VGS = -4.5V 0.15 0.16 0.12 ID = -4.0A 0.08 0.10 0.05 VGS = -10V 0.00 0 5 10 15 20 -I D , Drain Current (A) 0.04 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 -VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current 6 www.irf.com IRF5800 TSOP-6 Package Outline TSOP-6 Part Marking Information www.irf.com 7 IRF5800 TSOP-6 Tape & Reel Information WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 2/2000 8 www.irf.com |
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