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| IL215A/216A/217A PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER * FEATURES * High Current Transfer Ratio, IF=1 mA IL215A--20% Minimum IL216A--50% Minimum IL217A--100% Minimum * Isolation Voltage, 2500 VACRMS * Electrical Specifications Similar to Standard 6 Pin Coupler * Industry Standard SOIC-8 Surface Mountable Package * Standard Lead Spacing, .05" * Available in Tape and Reel Option (Conforms to EIA Standard RS481A) * Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering * Underwriters Lab File #E52744 (Code Letter P) DESCRIPTION The IL215A/216A/217A are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The IL215A//216A/217A comes in a standard SOIC-8 small outline package for surface mounting which makes it ideally suited for high density applications with limited space. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices. The high CTR at low input current is designed for low power consumption requirements such as CMOS microprocessor interfaces. Maximum Ratings Emitter Peak Reverse Voltage .....................................6.0 V Continuous Forward Current ........................ 60 mA Power Dissipation at 25C............................90 mW Derate Linearly from 25C ......................1.2 mW/C Detector Collector-Emitter Breakdown Voltage ...............30 V Emitter-Collector Breakdown Voltage .................7 V Collector-Base Breakdown Voltage ..................70 V Power Dissipation ......................................150 mW Derate Linearly from 25C ......................2.0 mW/C Package Total Package Dissipation at 25C Ambient (LED + Detector).....................................280 mW Derate Linearly from 25C ......................3.3 mW/C Storage Temperature .................. -55C to +150C Operating Temperature .............. -55C to +100C Soldering Time at 260C ............................. 10 sec. Dimensions in inches (mm) .120.005 (3.05.13) .240 (6.10) Pin One ID .192.005 (4.88.13) .004 (.10) .008 (.20) Anode 1 .154.005 Cathode 2 C L (3.91.13) NC 3 NC 4 .016 (.41) .015.002 (.38.05) .008 (.20) .050 (1.27) typ. .021 (.53) 40 8 7 6 5 NC Base Collector Emitter 7 .058.005 (1.49.13) .125.005 (3.18.13) Lead Coplanarity .0015 (.04) max. 5 max. R.010 (.25) max. .020.004 (.15.10) 2 plcs. Characteristics (TA=25C) Symbol Emitter Forward Voltage Reverse Current Capacitance Detector Breakdown Voltage Collector-Emitter Emitter-Collector Dark Current, Collector-Emitter Capacitance, Collector-Emitter Package DC Current Transfer Ratio IL215A IL216A IL217A Saturation Voltage, Collector-Emitter Isolation Test Voltage Capacitance, Input to Output Resistance, Input to Output Switching Time CTRDC 20 50 100 VCEsat VIO CIO 2500 0.5 50 80 130 0.5 VACRMS pF % IF=10 mA, VCE=5 V BVCEO BVECO ICEOdark CCE 30 7 5 10 50 V V nA pF IC=10 A IE=10 A VCE=10 V IF=0 VCE=0 VF IR CO 1.0 0.1 25 1.5 100 V A pF IF=1 mA VR=6.0 V VR=0 Min. Typ. Max. Unit Condition IF=1 mA, IC=0.1 mA RIO ton,toff 100 3.0 G s IC=2 mA, RE=100 , VCE=10 V 5-1 This document was created with FrameMaker 4.0.4 Figure 1. Forward voltage versus forward current 1.4 Vf-Forward Voltage - V 1.3 1.2 1.1 1.0 0.9 Ta = 100C 0.8 0.7 .1 1 10 If- Forward Current - mA 100 Ta = 25C Ta = -55C Figure 5. Collector-base photocurrent versus LED current Icb - Collector-base Current - A 1000 100 10 1 .1 .1 1 10 100 Ta = 25C Vcb = 9.3 V IF - LED Current - mA Figure 2. Normalized non-saturated and saturated CTRce versus LED current NCT Rce - Normalized CTRce Figure 6. Collector-emitter leakage current versus temperature Collector emitter leakage current versus temperature Iceo - Collector-Emitter - nA 10 10 10 5 4 3 1.5 Normalized to: Vce = 10 V IF = 10 mA Ta = 25 C Vce = 5 V 1.0 10 2 10 10 1 0 Vce = 10V TYPICAL 0.5 Vce = 0.4 V 0.0 .1 1 10 IF - LED Current - mA 100 10 -1 10 -2 -20 0 20 40 60 80 100 Ta - Ambient Temperature - C Figure 3. Collector-emitter current versus LED current 150 Ta = 25C Figure 7. Normalized saturated HFE versus base current and temperature 2.0 70C 50C 1.5 1.0 Vce = 0.4 V 0.5 0.0 1 10 100 Ib - Base Current - A 1000 25C Normalized to: Ib = 20A Vce = 10 V Ta = 25 C Vce = 10 V 100 50 Vce = 0.4 V 0 .1 1 10 IF - LED Current - mA 100 Figure 4. Normalized collector-base photocurrent versus LED current Figure 8. Normalized non-saturated and saturated CTRce versus LED current NCTRce - Normalized CTRce NIcb - Normalized Icb 100 Normalized to: Vcb = 9.3 V 10 IF = 1 mA Ta = 25 C 1 .1 .1 1 10 IF - LED Current - mA 100 NHFE(sat) - Normalized Saturated HFE Ice - Collector-emitter Current - mA 2.0 1.5 1.0 0.5 Normalized to: Ta = 25 C Vce = 5 V IF = 1 mA Vce = 5 V Vce = .4 V 0.0 .1 1 10 IF - LED Current - mA 100 IL215A/216A/217A 5-2 Figure 9. Normalized non-saturated and saturated collector-emitter current versus LED current 100 Normalized to: Ta = 25C Vce = 5 V IF = 1 mA Vce = 5 V Vce = .4 V Figure 13. Low to high propagation delay versus LED current and load resistor 7 80 tpLH - Low-High Propagation Delay - s NIce - Normalized Ice 10K 60 40 20 0 0 5 10 15 IF - LED Current - mA 20 4.7K 2K Ta = 25C, Vcc = 5 V, Vth = 1.5 V 10 1 .1 .01 .1 1 10 IF - LED Current - mA 100 Figure 10. Normalized collector-base photocurrent versus LED current 100 Normalized to: Ta = 25C Vce = 5 V IF = 1 mA Figure 14. Normalized non-saturated HFE versus base current and temperature 1.2 NHFE - Normalized HFE 70C 50C 1.0 0.8 0.6 0.4 1 25C -20C NIcb - Normalized Icb 10 1 .1 .01 .01 Normalized to: Ib = 20A Vce = 10 V Ta = 25C .1 1 10 100 IF - LED Current - mA 1000 10 100 Ib - Base Current - A 1000 Figure 11. Collector-base photocurrent versus LED current 1000 Icb - Collector-base photocurrent -a Figure 15. Typical switching characteristics versus base resistance (saturated operation) 100 Input: IF =10mA 50 Pulse width=100 mS Duty cycle=50% Ta = 25C Vcb = 9.3 V 100 10 1 .1 .01 .1 1 10 100 IF - LED Current - mA 1000 Switching time (s) T OF F 10 5 TON 1.0 10K 50K 100K 500K 1M Base-emitter resistance, RBE () Figure 12. High to low propagation delay versus LED current and load resistor tpHL - High-Low Propagation Delay - s 20 10K 15 10 5 0 0 5 10 15 IF - LED Current - mA 20 2K 4.7K Ta = 25C Vcc = 5 V Vth = 1.5 V Figure 16. Typical switching timesversus load resistance 1000 Input: 500 IF=10 mA Pulse width=100 mS Duty cycle=50% 100 50 10 5 1 Switching time (S) TO FF TON 0.1 0.5 1 5 10 50 100 Load resistance RL (K) IL215A/216A/217A 5-3 |
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