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| SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * 60 Volt VCEO * 1 Amp continuous current FMMT551 C E COMPLEMENTARY TYPE PARTMARKING DETAIL FMMT451 551 B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage SYMBOL V(BR)CBO VCEO(sus) MIN. -80 -60 -5 -0.1 -0.1 -0.35 -1.1 50 10 150 25 150 MHz pF MAX. SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg UNIT V V V A A VALUE -80 -60 -5 -2 -1 -200 500 -55 to +200 CONDITIONS. IC=-100A IC=-10mA* IE=-100A VCB=-60V VEB=-4V UNIT V V V A A mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). Emitter-Base Breakdown V(BR)EBO Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance ICBO IEBO VCE(sat) VBE(sat) hFE fT Cobo V V IC=-150mA, IB=-15mA* IC=-150mA, IB=-15mA* IC=-150mA, VCE=-10V* IC=-1A, VCE=-10V* IC=-50mA, VCE=-10V f=100MHz VCB=-10V, f=1MHz *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 129 FMMT551 TYPICAL CHARACTERISTICS 100 - Normalised Gain (%) -0.1 -1 -10 -0.8 80 - (Volts) -0.6 60 -0.4 I+/I*=10 -0.2 40 V 20 0 -0.01 h -0.001 -0.01 -0.1 -1 -10 I+ - Collector Current (Amps) I+ - Collector Current (Amps) VCE(sat) v IC hFE v IC -1.4 -1.0 - (Volts) - (Volts) V -1.2 -0.9 -1.0 -0.8 V -0.8 -0.7 -0.6 -0.01 -0.1 -1 -10 -0.6 -0.01 -0.1 -1 -10 I+ - Collector Current (Amps) I+ - Collector Current (Amps) VBE(on) v IC 10 VBE(sat) v IC 1 DC 1s 100ms 10ms 1ms 100s 0.1 0.01 0.1V 1V 10V 100V VCE - Collector Emitter Voltage (V) Safe Operating Area 3 - 130 |
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