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| June 1996 NDP7060L / NDB7060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 75A, 60V. RDS(ON) = 0.015 @ VGS = 5V Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. ________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VDGR VGSS ID Parameter Drain-Source Voltage T C = 25C unless otherwise noted NDP7060L 60 60 20 40 75 225 150 1 -65 to 175 NDB7060L Units V V V Drain-Gate Voltage (RGS < 1 M) Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) Drain Current - Continuous - Pulsed A PD Total Power Dissipation @ TC = 25C Derate above 25C W W/C C TJ,TSTG Operating and Storage Temperature Range (c) 1997 Fairchild Semiconductor Corporation NDP7060L Rev. B2 / NDB7060L Rev. C Electrical Characteristics (TC = 25C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE AVALANCHE RATINGS (Note 1) W DSS IAR BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) ID(on) gFS Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = 25 V, ID = 75 A 550 75 mJ A OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 A VDS = 60 V, VGS = 0 V TJ = 125C Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 A TJ = 125C Static Drain-Source On-Resistance VGS = 5 V, ID = 37.5 A TJ = 125C On-State Drain Current Forward Transconductance VGS = 5 V, VDS = 10 V VDS = 10 V, ID = 37.5 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz 75 15 67 1 0.65 1.3 0.8 0.01 0.016 60 250 1 100 -100 V A mA nA nA ON CHARACTERISTICS (Note 1) Gate Threshold Voltage 2 1.5 0.015 0.024 A S V DYNAMIC CHARACTERISTICS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance 4200 1100 310 4000 1600 800 pF pF pF SWITCHING CHARACTERISTICS (Note 1) Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 48 V, ID = 75 A, VGS = 5 V VDD = 30 V, ID = 75 A, VGS = 5 V, RGEN = 10 RGS = 10 23 460 100 270 86 13 62 40 600 150 400 115 nS nS nS nS nC nC nC NDP7060L Rev. B2 / NDB7060L Rev. C Electrical Characteristics (TC = 25C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS IS ISM VSD Maximum Continuos Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 37.5 A (Note 1) TJ = 125C trr Irr Reverse Recovery Time Reverse Recovery Current VGS = 0 V, IF = 60A, dIF/dt = 100 A/s 0.92 0.85 108 4.6 75 225 1.3 1.2 150 10 ns A A A V THERMAL CHARACTERISTICS RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1 62.5 C/W C/W Note: 1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. NDP7060L Rev. B2 / NDB7060L Rev. C Typical Electrical Characteristics 120 2 VGS = 10V ID , DRAIN-SOURCE CURRENT (A) 100 6.0 DRAIN-SOURCE ON-RESISTANCE 4.0 5.0 4.5 3.5 R DS(on), NORMALIZED 1.8 V GS = 3.0V 1.6 1.4 1.2 80 3.5 4.0 4.5 5.0 6.0 60 3.0 40 1 0.8 2.5 20 10 0 0 0.5 1 1.5 2 V DS , DRAIN-SOURCE VOLTAGE (V) 2.5 3 0.6 0 20 40 60 80 I D , DRAIN CURRENT (A) 100 120 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 2 2 DRAIN-SOURCE ON-RESISTANCE DRAIN-SOURCE ON-RESISTANCE 1.75 I D = 40A V GS = 10V R DS(on), NORMALIZED V GS 1.8 1.6 1.4 1.2 = 5V TJ = 125C R DS(ON), NORMALIZED 1.5 1.25 1 25C 1 0.8 0.6 0 20 40 60 80 ID , DRAIN CURRENT (A) 100 120 0.75 -55C 0.5 -50 -25 0 25 50 75 100 125 T , JUNCTION TEMPERATURE (C) J 150 175 Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Drain Current and Temperature. 80 1 .4 V GS(th) , NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE V DS = 10V 60 T = -55C J 125C 25C V DS = VGS 1 .2 I D = 250A , DRAIN CURRENT (A) 1 40 0 .8 I D 20 0 .6 0 0 1 V GS 2 3 , GATE TO SOURCE VOLTAGE (V) 4 0 .4 -50 -25 0 25 50 75 100 125 TJ , JUNCTION TEMPERATURE (C) 150 175 Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation with Temperature. NDP7060L Rev. B2 / NDB7060L Rev. C Typical Electrical Characteristics (continued) 1.15 BV DSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE I D = 250A I , REVERSE DRAIN CURRENT (A) 1.1 80 50 V GS = 0V 10 T J = 125C 1 1.05 25C -55C 1 0.1 0.95 0.01 0.9 -50 S -25 0 T J 25 50 75 100 125 , JUNCTION TEMPERATURE (C) 150 175 0.001 0.2 0.4 V SD 0.6 0.8 1 1.2 , BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 7. Breakdown Voltage Variation with Temperature. Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. 7000 5000 10 Ciss VGS , GATE-SOURCE VOLTAGE (V) 8 I D = 75A V DS = 12V 48V 24V CAPACITANCE (pF) 2000 Coss 1000 6 4 500 300 200 1 f = 1 MHz V GS = 0V 2 Crss 0 2 V 3 DS 5 10 20 , DRAIN TO SOURCE VOLTAGE (V) 30 50 0 40 80 Q g , GATE CHARGE (nC) 120 160 Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics. VDD t d(on) t on tr 90% to f f t d(off) 90% tf VIN D RL V OUT DUT VGEN VO U T 10% 10% INVERTED R GEN RGS G 90% V IN S 10% 50% 50% PULSE W IDTH Figure 11. Switching Test Circuit. Figure 12. Switching Waveforms. NDP7060L Rev. B2 / NDB7060L Rev. C Typical Electrical Characteristics (continued) 100 300 , TRANSCONDUCTANCE (SIEMENS) V DS =10V 80 TJ = -55C ID , DRAIN CURRENT (A) 200 100 R (O DS N) Lim it 10 s 100 s 1m 10m 100 DC ms s s 25C 60 50 125C 20 10 5 40 20 2 0 0 10 20 30 40 50 60 I D , DRAIN CURRENT (A) 1 1 VGS = 10V SINGLE PULSE R JC = 1 o C/W T C = 25 C 2 3 5 10 g FS 20 30 60 100 V DS , DRAIN-SOURCE VOLTAGE (V)) Figure 13. Transconductance Variation with Drain Current and Temperature. Figure 14. Maximum Safe Operating Area. 1 TRANSIENT THERMAL RESISTANCE 0.5 0.3 0.2 D = 0.5 r(t), NORMALIZED EFFECTIVE 0.2 0.1 R JC (t) = r(t) * RJC R JC = 1.0 C/W 0.1 0.05 P(pk) 0.05 0.03 0.02 0.01 0.01 0.02 0.01 Single Pulse t1 t2 TJ - T C = P * R JC (t) Duty Cycle, D = t1 /t2 0.1 0.5 1 5 t 1 ,TIME (ms) 10 50 100 500 1000 0.05 Figure 15. Transient Thermal Response Curve. NDP7060L Rev. B2 / NDB7060L Rev. C |
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