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| HA13156 38 W x 4-Channel BTL Power IC ADE-207-241 (Z) 1st. Edition July 1997 Description The HA13156 is four-channel BTL amplifier IC designed for car audio, featuring high output and low distortion, and applicable to digital audio equipment. It provides 38 W output per channel, with a 13.7 V power supply and at Max distortion. Functions * * * * * 4 ch BTL power amplifiers Built-in standby circuit Built-in muting circuit Built-in protection circuit (surge, T.S.D, and ASO) Built-in change booster ON/OFF circuit Features * * * * High power for booster circuit Popping noise minimized Low output noise Built-in high reliability protection circuit HA13156 Block Diagram + VCC C11 0.47 SW1 2 STBY IN1 1 Buffer & Mute-1 16 INVCC 6 PVCC1 24 PVCC2 3 C9 4400 OUT1 + C1 R1 SP1 Amp1 4 PGND1 0.1 2.2 C2 R2 IN2 11 Buffer & Mute-2 5 0.1 2.2 OUT1 - OUT2 + C3 R3 SP2 IN3 12 Buffer & Mute-3 Amp2 7 IN4 SW2 R9 C12 7.5k 4.7 + 28 Buffer & Mute-4 8 PGND2 0.1 2.2 C4 R4 9 10 MUTE Protector (ASO, Surge, TSD) Amp3 Booster BST2 17 23 21 0.1 2.2 OUT2 - OUT3 + C5 R5 SP3 BST1 C14 0.47 15 22 PGND3 0.1 2.2 C6 R6 0.1 2.2 OUT3 - OUT4 + C7 R7 SP4 SW3 BSTSW 13 CLKGEN 25 Amp4 26 PGND4 0.1 2.2 C8 R8 27 INGND 14 0.1 2.2 OUT4 - 19 BSTOUT + C13 100 18 BSTGND 20 + C10 2.2 TAB Unit R: C: F * C1 to C8 should be polyester film capacitors with no secondary resonance (non-inductive), to assure stable operation. 2 HA13156 Note: 1. Standby Power is turned on when a signal of 3.5 V or 0.05 mA is impressed at pin 2. When pin 2 is open or connected to GND, standby is turned on (output off). 5V 2 37.5 k 23.5 k Q1 ON BIAS ON 2. Muting Muting is turned off (output off) when a signal of 3.5 V or 0.2 mA is impressed at pin 10. When pin 10 is open or connected to GND, muting is turned on (output off). 5V 10 25 k Q2 ON MUTE ON 3. DC-DC converter (Booster) DC-DC converter (Booster) in IC is turned on when a signal of 3.5 V over or 0.04 mA over is impressed at pin 13, and get large max output power. When pin 13 is open or connected to GND, DC-DC converter (Booster) is turned off. This IC is generated noise, because built-in DC-DC converter (Booster). Consequently if you use radio tuner (AM), I recommend DC-DC converter (Booster) off. 5V 13 30 k 20 k Q3 ON Booster ON 3 HA13156 Absolute Maximum Ratings Item Operating supply voltage Supply voltage when no signal* Peak supply voltage* Output current* 3 4 2 1 Symbol VCC VCC (DC) VCC (PEAK) I O (PEAK) PT Tj Topr Tstg Rating 18 26 50 4 83 150 -30 to +85 -55 to +125 Unit V V V A W C C C Power dissipation* Junction temperature Operating temperature Storage temperature Note: 1. 2. 3. 4. Tolerance within 30 seconds. Tolerance in surge pulse waveform. Value per 1 channel. Value when attached on the infinite heat sink plate at Ta = 25 C. The derating carve is as shown in the graph below. 100 83 W A: When heat sink is infinite (j-a = 1.5C/W) B: When f (thermal resistance of heat sink) = 3C/W (j-a = 4.5C/W) Power dissipation PT (W) A 50 28 W B 0 25 50 85 100 (C) 150 Ambient temperature Ta 4 HA13156 Electrical Characteristics (VCC = 13.2 V, RL = 4 , f = 1 kHz, Rg = 600 , Ta = 25C, when there is no description in test conditions) Item Quiescent current1 Quiescent current2 Total harmonic distortion Gain Gain difference between channels Rated output power1 Rated output power2 Max output power1 Max output power2 Output noise voltage1 Output noise voltage2 Ripple rejection Output offset voltage1 Output offset voltage2 Standby current Standby control voltage (high) Standby control voltage (low) Muting control voltage (high) Muting control voltage (low) Boost control voltage (high) Boost control voltage (low) Muting attenuation Channel cross talk Input impedance Input voltage muted completly Symbol IQ1 IQ2 T.H.D. GV GV PO1 PO2 POMAX1 POMAX2 WBN1 WBN2 SVR VQ1 VQ2 IST VSTH VSTL VMH VML VBH VBL ATTM C.T. Zin ATTin Min 275 190 -- 30.5 -1.0 20 17 35 31 -- -- 45 -250 -250 -- 3.5 0 3.5 0 3.5 0 70 60 18 7 Typ 380 320 0.02 32 0 23 20 38 34 0.15 0.08 55 0 0 1 -- -- -- -- -- -- 90 80 25 -- Max 480 420 0.1 33.5 1.0 -- -- -- -- 0.3 0.2 -- 250 250 10 VCC 1.5 VCC 1.5 VCC 1.5 -- -- 33 -- Unit mA mA % dB dB W W W W mVrms mVrms dB mV mV A V V V V V V dB dB k Vp-p Vout = 6.7 Vrms Vout = 6.7 Vrms VCC = 13.2 V, boost on, RL = 4 , THD = 10% VCC = 13.2 V, boost off, RL = 4 , THD = 10% VCC = 13.7 V, boost on, RL = 4 VCC = 13.7 V, boost off, RL = 4 Rg = 0 , mute off, BW = 20 to 20 kHz Rg = 0 , mute on, BW = 20 to 20 kHz f = 120 Hz Vin = 0 V, mute off Vin = 0 V, change value of mute on off boost off Test Conditions Vin = 0 V, boost on, RL = Vin = 0 V, boost off, RL = Po = 3 W, boost on, off Note: boost on; Boost control voltage (high), mute on; Muting control voltage (low) 5 HA13156 Characteristic Curves Quiescent current vs. Supply Voltage 400 RL = Booster ON Quiescent current IQ (mA) 300 Booster OFF 200 100 0 0 8 10 12 14 16 18 20 Supply Voltage VCC (V) Output Power vs. Supply Voltage 70 60 Output Power Po, Pomax (W) 50 40 30 20 10 0 10 ax (B oo RL = 4 , f = 1 kHz r ste ON ) m Po ( B ax %, F) 10 OF om = P ter D s oo (TH ,B Po 0% 1 D= (TH Po o Bo s O ter FF ) er ON ) st oo 12 14 16 18 20 Supply Voltage VCC (V) 6 HA13156 Total Harmonic Distortion vs. Frequency (1) 5 Total Harmonic Distortion THD (%) 2 1 0.5 0.2 0.1 0.05 0.02 0.01 20 50 100 200 500 1k 2k 5k 10k 20k VCC = 13.2 V, RL = 4 , Booster ON Po = 1.5 W (Ch1-Ch4) Po = 8 W (Ch1-Ch4) Frequency f (Hz) Total Harmonic Distortion vs. Frequency (2) 5 Total Harmonic Distortion THD (%) 2 1 0.5 0.2 0.1 0.05 0.02 0.01 20 50 100 200 500 1k 2k 5k 10k 20k VCC = 13.2 V, RL = 4 , Booster OFF Po = 1.5 W (Ch1-Ch4) Po = 8 W (Ch1-Ch4) Frequency f (Hz) 7 HA13156 Total Harmonic Distortion vs. Output Power (1) 10 5 Total Harmonic Distortion THD (%) 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 30 VCC = 13.2 V, RL = 4 , Booster ON f = 100 Hz (Ch1-Ch4) f = 1 kHz (Ch1-Ch4) f = 10 kHz (Ch1-Ch4) Output Power Po (W) Total Harmonic Distortion vs. Output Power (2) 10 5 Total Harmonic Distortion THD (%) 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 VCC = 13.2 V, RL = 4 , Booster OFF f = 100 Hz (Ch1-Ch4) f = 1 kHz (Ch1-Ch4) f = 10 kHz (Ch1-Ch4) Output Power Po (W) 8 HA13156 Crosstalk vs. Frequency (1) 90 80 70 Crosstalk CT (dB) 60 50 40 30 20 10 20 VCC = 13.2 V, Vout = 6.7 Vrms, Input Ch1, Booster ON Ch2 Ch3 Ch4 50 100 200 500 1k 2k 5k 10k Frequency f (Hz) Crosstalk vs. Frequency (2) 90 80 70 Crosstalk CT (dB) 60 50 40 30 20 10 20 VCC = 13.2 V, Vout = 6.7 Vrms, Input Ch1, Booster OFF Ch2 Ch3 Ch4 50 100 200 500 1k 2k 5k 10k Frequency f (Hz) 9 HA13156 Crosstalk vs. Frequency (3) 90 80 70 Crosstalk CT (dB) 60 50 40 30 20 10 20 VCC = 13.2 V, Vout = 6.7 Vrms, Input Ch2, Booster ON Ch1 Ch3 Ch4 50 100 200 500 1k 2k 5k 10k Frequency f (Hz) Crosstalk vs. Frequency (4) 90 80 70 Crosstalk CT (dB) 60 50 40 30 20 10 20 VCC = 13.2 V, Vout = 6.7 Vrms, Input Ch2, Booster OFF Ch1 Ch3 Ch4 50 100 200 500 1k 2k 5k 10k Frequency f (Hz) 10 HA13156 Crosstalk vs. Frequency (5) 90 80 70 Crosstalk CT (dB) 60 50 40 30 20 10 20 VCC = 13.2 V, Vout = 6.7 Vrms, Input Ch3, Booster ON Ch1 Ch2 Ch4 50 100 200 500 1k 2k 5k 10k Frequency f (Hz) Crosstalk vs. Frequency (6) 90 80 70 Crosstalk CT (dB) 60 50 40 30 20 10 20 VCC = 13.2 V, Vout = 6.7 Vrms, Input Ch3, Booster OFF Ch1 Ch2 Ch4 50 100 200 500 1k 2k 5k 10k Frequency f (Hz) 11 HA13156 Crosstalk vs. Frequency (7) 90 80 70 Crosstalk CT (dB) 60 50 40 30 20 10 20 VCC = 13.2 V, Vout = 6.7 Vrms, Input Ch4, Booster ON Ch1 Ch2 Ch3 50 100 200 500 1k 2k 5k 10k Frequency f (Hz) Crosstalk vs. Frequency (8) 90 80 70 Crosstalk CT (dB) 60 50 40 30 20 10 20 VCC = 13.2 V, Vout = 6.7 Vrms, Input Ch4, Booster OFF Ch1 Ch2 Ch3 50 100 200 500 1k 2k 5k 10k Frequency f (Hz) 12 HA13156 Supply Voltage Rejection Ratio vs. Frequency (1) 80 Supply Voltage Rejection Ratio SVR (dB) 70 60 50 40 30 20 10 0 20 VCC = 13.2 V, RL = 4 , Vripple = 0 dBm, Booster ON, Rg = 620 Ch1 Ch2 Ch3 Ch4 50 100 200 500 1k 2k 5k 10k Frequency f (Hz) Supply Voltage Rejection Ratio vs. Frequency (2) 80 Supply Voltage Rejection Ratio SVR (dB) 70 60 50 40 30 20 10 0 20 VCC = 13.2 V, RL = 4 , Vripple = 0 dBm, Booster OFF, Rg = 620 Ch1 Ch2 Ch3 Ch4 50 100 200 500 1k 2k 5k 10k Frequency f (Hz) 13 HA13156 Wide Band Noise vs. Signal Source Resistance (1) 5 2 Wide Band Noise WBN (mV) 1 0.5 0.2 0.1 0.05 0.02 0.01 20 50 100 200 500 1k 2k 5k 10k 20k 50k Mute ON Ch1-Ch4 Mute OFF Ch1-Ch4 VCC = 13.2 V, RL = 4 , Vin = 0, Booster ON Signal Source Resistance Rg () Wide Band Noise vs. Signal Source Resistance (2) 5 2 Wide Band Noise WBN (mV) 1 0.5 0.2 0.1 0.05 0.02 0.01 20 50 100 200 500 1k 2k 5k 10k 20k 50k Mute ON Ch1-Ch4 Mute OFF Ch1-Ch4 VCC = 13.2 V, RL = 4 , Vin = 0, Booster OFF Signal Source Resistance Rg () 14 HA13156 Power Dissipation vs. Output Power 100 50 Power Dissipation PT (W) RL = 4 , f = 1 kHz, 1ch operation Booster ON (Ch1-Ch4) VCC = 13.2 V Booster OFF (Ch1-Ch4) Booster ON (Ch1-Ch4) VCC = 16 V Booster OFF (Ch1-Ch4) 20 10 5 2 1 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 Output Power Po (W) Power Dissipation vs. Frequency 15 Booster ON (Ch1-Ch4) Booster OFF (Ch1-Ch4) Power Dissipation PT (W) 10 5 VCC = 13.2 V, RL = 4 , Po = 10 W, 1ch operation 0 20 50 100 200 500 1k 2k 5k 10k 20k Frequency f (Hz) 15 HA13156 Gain vs. Frequency 40 35 30 Gain GV (dB) 25 20 15 10 5 0 20 VCC = 13.2 V, RL = 4 , VOUT = 0 dBm, Booster ON and OFF (Ch1-Ch4) 50 100 200 500 1k 2k 5k 10k 20k 50k 100k 200k 500k 1M Frequency f (Hz) 16 HA13156 Package Dimensions Unit: mm 30.18 0.25 19.81 4.32 0.05 3.80 0.05 4.50 0.12 0.05 1.55 + 0.1 - 17.50 0.13 3.80 0.05 R1.84 0.19 10.70 0.12 2.79 1 0.5 0.10 27.0 Typ 1.0 Typ 28 5.08 4.29 Hitachi Code JEDEC Code EIAJ Code Weight SP-28TA -- -- -- 4.14 0.33 0.06 0.40 + 0.04 - 17.78 0.25 17 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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